MMBT123S-7-F
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- Mfr.Part #
- MMBT123S-7-F
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 18V 1A SOT23-3
- Stock
- 4
- In Stock ：
- 4
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- -55°C~150°C TJ
- Polarity/Channel Type :
- NPN
- Series :
- Automotive, AEC-Q101
- Mounting Type :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 18V
- Pbfree Code :
- yes
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Gain Bandwidth Product :
- 100MHz
- Packaging :
- Tape and Reel (TR)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 150 @ 100mA 1V
- REACH SVHC :
- No SVHC
- JESD-609 Code :
- e3
- Frequency :
- 100MHz
- Peak Reflow Temperature (Cel) :
- 260
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Number of Elements :
- 1
- Radiation Hardening :
- No
- Continuous Collector Current :
- 1A
- Terminal Finish :
- Matte Tin (Sn)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Saturation Voltage :
- 500mV
- Collector Emitter Voltage (VCEO) :
- 18V
- Voltage - Rated DC :
- 18V
- Transistor Application :
- SWITCHING
- Terminal Position :
- Dual
- Power Dissipation :
- 300mW
- Collector Base Voltage (VCBO) :
- 45V
- Terminal Form :
- Gull wing
- Number of Pins :
- 3
- Weight :
- 7.994566mg
- Height :
- 1mm
- Number of Terminations :
- 3
- Transistor Element Material :
- SILICON
- Max Power Dissipation :
- 300mW
- Emitter Base Voltage (VEBO) :
- 5V
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Pin Count :
- 3
- Transistor Type :
- NPN
- Base Part Number :
- MMBT123S
- Element Configuration :
- Single
- Width :
- 1.4mm
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 30mA, 300mA
- Max Breakdown Voltage :
- 18V
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Published :
- 2008
- Length :
- 3.05mm
- Max Collector Current :
- 1A
- Current Rating :
- 1A
- Mount :
- Surface Mount
- Factory Lead Time :
- 19 Weeks
- hFE Min :
- 150
- Transition Frequency :
- 100MHz
- Lead Free :
- Lead Free
- Datasheets
- MMBT123S-7-F
NPN -55°C~150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
MMBT123S-7-F Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 150 @ 100mA 1V.With a collector emitter saturation voltage of 500mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 30mA, 300mA.In order to achieve high efficiency, the continuous collector voltage should be kept at 1A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 1A.A transition frequency of 100MHz is present in the part.There is a breakdown input voltage of 18V volts that it can take.Collector current can be as low as 1A volts at its maximum.
MMBT123S-7-F Features
the DC current gain for this device is 150 @ 100mA 1V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 30mA, 300mA
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 100MHz
MMBT123S-7-F Applications
There are a lot of Diodes Incorporated
MMBT123S-7-F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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