MMBT200

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Lead Free :

Lead Free

Radiation Hardening :

No

Factory Lead Time :

39 Weeks

Vce Saturation (Max) @ Ib, Ic :

400mV @ 20mA, 200mA

Collector Emitter Saturation Voltage :

-200mV

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 150mA 5V

Transition Frequency :

250MHz

JESD-609 Code :

e3

Number of Terminations :

3

Max Power Dissipation :

350mW

Number of Pins :

3

ECCN Code :

EAR99

Gain Bandwidth Product :

250MHz

RoHS Status :

ROHS3 Compliant

Polarity/Channel Type :

PNP

Terminal Form :

Gull wing

Transistor Application :

AMPLIFIER

Base Part Number :

MMBT200

Width :

1.3mm

Operating Temperature :

-55°C~150°C TJ

Emitter Base Voltage (VEBO) :

-6V

Mount :

Surface Mount

Height :

930μm

Power Dissipation :

350mW

Pbfree Code :

yes

Element Configuration :

Single

Terminal Finish :

Tin (Sn)

Collector Emitter Voltage (VCEO) :

45V

Packaging :

Tape and Reel (TR)

hFE Min :

100

Collector Emitter Breakdown Voltage :

45V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Current Rating :

-500mA

Voltage - Rated DC :

-45V

Max Breakdown Voltage :

45V

Terminal Position :

Dual

Collector Base Voltage (VCBO) :

-60V

Package / Case :

TO-236-3, SC-59, SOT-23-3

Published :

2017

Weight :

30mg

Transistor Element Material :

SILICON

Frequency :

250MHz

Max Collector Current :

500mA

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 2 days ago)

Length :

2.92mm

Current - Collector Cutoff (Max) :

50nA

Transistor Type :

PNP

Mounting Type :

Surface Mount