MMBT200

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Base Part Number :

MMBT200

Current - Collector Cutoff (Max) :

50nA

Collector Emitter Saturation Voltage :

-200mV

Collector Emitter Breakdown Voltage :

45V

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 150mA 5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

AMPLIFIER

Weight :

30mg

Gain Bandwidth Product :

250MHz

Polarity/Channel Type :

PNP

Operating Temperature :

-55°C~150°C TJ

hFE Min :

100

JESD-609 Code :

e3

Terminal Position :

Dual

Radiation Hardening :

No

ECCN Code :

EAR99

Current Rating :

-500mA

Vce Saturation (Max) @ Ib, Ic :

400mV @ 20mA, 200mA

Number of Elements :

1

Max Power Dissipation :

350mW

Packaging :

Tape and Reel (TR)

Element Configuration :

Single

Frequency :

250MHz

RoHS Status :

ROHS3 Compliant

Power Dissipation :

350mW

Lead Free :

Lead Free

Mounting Type :

Surface Mount

Package / Case :

TO-236-3, SC-59, SOT-23-3

Width :

1.3mm

Transistor Element Material :

SILICON

Emitter Base Voltage (VEBO) :

-6V

Max Collector Current :

500mA

Max Breakdown Voltage :

45V

Collector Emitter Voltage (VCEO) :

45V

Height :

930μm

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 2 days ago)

Voltage - Rated DC :

-45V

Number of Pins :

3

Terminal Finish :

Tin (Sn)

Factory Lead Time :

39 Weeks

Terminal Form :

Gull wing

Collector Base Voltage (VCBO) :

-60V

Pbfree Code :

yes

Transistor Type :

PNP

Length :

2.92mm

Transition Frequency :

250MHz

Number of Terminations :

3

Published :

2017

Mount :

Surface Mount