MMBT200

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Max Breakdown Voltage :

45V

Transition Frequency :

250MHz

Terminal Position :

Dual

Height :

930μm

Emitter Base Voltage (VEBO) :

-6V

JESD-609 Code :

e3

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 150mA 5V

Collector Emitter Breakdown Voltage :

45V

Lead Free :

Lead Free

Max Power Dissipation :

350mW

Published :

2017

Terminal Form :

Gull wing

Transistor Application :

AMPLIFIER

Vce Saturation (Max) @ Ib, Ic :

400mV @ 20mA, 200mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

2.92mm

Width :

1.3mm

Factory Lead Time :

39 Weeks

Mount :

Surface Mount

Transistor Element Material :

SILICON

Gain Bandwidth Product :

250MHz

Package / Case :

TO-236-3, SC-59, SOT-23-3

Terminal Finish :

Tin (Sn)

Collector Emitter Voltage (VCEO) :

45V

Pbfree Code :

yes

Mounting Type :

Surface Mount

Weight :

30mg

Number of Elements :

1

Collector Emitter Saturation Voltage :

-200mV

Radiation Hardening :

No

Polarity/Channel Type :

PNP

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 2 days ago)

RoHS Status :

ROHS3 Compliant

Transistor Type :

PNP

Frequency :

250MHz

Voltage - Rated DC :

-45V

Element Configuration :

Single

Operating Temperature :

-55°C~150°C TJ

Number of Pins :

3

Base Part Number :

MMBT200

Packaging :

Tape and Reel (TR)

hFE Min :

100

Power Dissipation :

350mW

Current - Collector Cutoff (Max) :

50nA

ECCN Code :

EAR99

Number of Terminations :

3

Current Rating :

-500mA

Max Collector Current :

500mA

Collector Base Voltage (VCBO) :

-60V