MMBT200

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Vce Saturation (Max) @ Ib, Ic :

400mV @ 20mA, 200mA

Transition Frequency :

250MHz

Lead Free :

Lead Free

hFE Min :

100

Weight :

30mg

Max Breakdown Voltage :

45V

Pbfree Code :

yes

Frequency :

250MHz

Emitter Base Voltage (VEBO) :

-6V

Collector Emitter Saturation Voltage :

-200mV

Height :

930μm

Current Rating :

-500mA

Package / Case :

TO-236-3, SC-59, SOT-23-3

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 150mA 5V

JESD-609 Code :

e3

Number of Terminations :

3

Mounting Type :

Surface Mount

Base Part Number :

MMBT200

Number of Pins :

3

Operating Temperature :

-55°C~150°C TJ

Terminal Form :

Gull wing

Collector Emitter Voltage (VCEO) :

45V

Packaging :

Tape and Reel (TR)

Length :

2.92mm

Current - Collector Cutoff (Max) :

50nA

Max Collector Current :

500mA

Collector Base Voltage (VCBO) :

-60V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Power Dissipation :

350mW

Terminal Finish :

Tin (Sn)

Power Dissipation :

350mW

Transistor Element Material :

SILICON

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 2 days ago)

Mount :

Surface Mount

Polarity/Channel Type :

PNP

Voltage - Rated DC :

-45V

Published :

2017

Collector Emitter Breakdown Voltage :

45V

Element Configuration :

Single

Transistor Application :

AMPLIFIER

Terminal Position :

Dual

Width :

1.3mm

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

39 Weeks

Gain Bandwidth Product :

250MHz

Number of Elements :

1

Radiation Hardening :

No

Transistor Type :

PNP