MJD148T4G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Element Configuration :

Single

Frequency :

3MHz

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Pin Count :

3

Number of Terminations :

2

Number of Pins :

3

Current - Collector Cutoff (Max) :

20μA ICBO

Published :

2005

Weight :

4.535924g

Transistor Type :

NPN

Polarity/Channel Type :

NPN

Transistor Application :

AMPLIFIER

Current Rating :

4A

Peak Reflow Temperature (Cel) :

260

Voltage - Rated DC :

45V

RoHS Status :

ROHS3 Compliant

DC Current Gain (hFE) (Min) @ Ic, Vce :

85 @ 500mA 1V

Packaging :

Tape and Reel (TR)

Max Power Dissipation :

1.75W

Collector Emitter Breakdown Voltage :

45V

Collector Emitter Saturation Voltage :

500mV

Base Part Number :

MJD148

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Gain Bandwidth Product :

3MHz

Vce Saturation (Max) @ Ib, Ic :

500mV @ 200mA, 2A

Width :

6.35mm

Lead Free :

Lead Free

Surface Mount :

yes

Contact Plating :

Tin

Terminal Form :

Gull wing

hFE Min :

40

Height :

6.35mm

Pbfree Code :

yes

Max Collector Current :

4A

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

40

Factory Lead Time :

8 Weeks

Collector Emitter Voltage (VCEO) :

45V

JESD-609 Code :

e3

Max Breakdown Voltage :

45V

Transistor Element Material :

SILICON

Transition Frequency :

3MHz

Length :

6.35mm

Mounting Type :

Surface Mount

Power Dissipation :

1.75W

Collector Base Voltage (VCBO) :

45V

JESD-30 Code :

R-PSSO-G2

Operating Temperature :

-65°C~150°C TJ

Case Connection :

COLLECTOR

ECCN Code :

EAR99

Emitter Base Voltage (VEBO) :

5V

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)