MJD128T4G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Factory Lead Time :

8 Weeks

Packaging :

Tape and Reel (TR)

Published :

2007

Terminal Finish :

Tin (Sn)

Number of Elements :

1

Transistor Element Material :

SILICON

Current Rating :

-8A

Radiation Hardening :

No

Peak Reflow Temperature (Cel) :

260

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Lead Free :

Lead Free

Surface Mount :

yes

Height :

2.38mm

Frequency - Transition :

4MHz

Collector Emitter Breakdown Voltage :

120V

Case Connection :

COLLECTOR

Width :

6.22mm

Number of Pins :

3

Transistor Type :

PNP - Darlington

Max Collector Current :

8A

Vce Saturation (Max) @ Ib, Ic :

4V @ 80mA, 8A

JESD-30 Code :

R-PSSO-G2

Mounting Type :

Surface Mount

Length :

6.73mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Base Voltage (VCBO) :

120V

Current - Collector Cutoff (Max) :

5mA

Halogen Free :

Halogen Free

Operating Temperature :

-65°C~150°C TJ

Pbfree Code :

yes

Collector Emitter Saturation Voltage :

2V

Pin Count :

3

Voltage - Rated DC :

-120V

Max Power Dissipation :

1.75W

Transistor Application :

SWITCHING

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

ECCN Code :

EAR99

Polarity :

PNP

RoHS Status :

ROHS3 Compliant

Number of Terminations :

2

Power Dissipation :

1.75W

Time@Peak Reflow Temperature-Max (s) :

40

Emitter Base Voltage (VEBO) :

5V

DC Current Gain (hFE) (Min) @ Ic, Vce :

1000 @ 4A 4V

Terminal Form :

Gull wing

Collector Emitter Voltage (VCEO) :

120V

REACH SVHC :

No SVHC

Element Configuration :

Single

JESD-609 Code :

e3