MJD128T4

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Mfr.Part #
MJD128T4
Manufacturer
onsemi
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
TRANS PNP DARL 120V 8A DPAK
Stock
19,248
In Stock :
19,248

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Published :
2007
JESD-30 Code :
R-PSSO-G2
Collector Emitter Breakdown Voltage :
120V
Halogen Free :
Halogen Free
Pin Count :
3
Polarity :
PNP
Number of Elements :
1
Time@Peak Reflow Temperature-Max (s) :
40
Lead Free :
Lead Free
Collector Base Voltage (VCBO) :
120V
Peak Reflow Temperature (Cel) :
260
Current Rating :
-8A
Voltage - Rated DC :
-120V
Factory Lead Time :
8 Weeks
DC Current Gain (hFE) (Min) @ Ic, Vce :
1000 @ 4A 4V
RoHS Status :
ROHS3 Compliant
Length :
6.73mm
Transistor Type :
PNP - Darlington
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Height :
2.38mm
Pbfree Code :
yes
Radiation Hardening :
No
Power Dissipation :
1.75W
Max Collector Current :
8A
Vce Saturation (Max) @ Ib, Ic :
4V @ 80mA, 8A
Number of Terminations :
2
Number of Pins :
3
REACH SVHC :
No SVHC
Element Configuration :
Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Element Material :
SILICON
ECCN Code :
EAR99
Packaging :
Tape and Reel (TR)
Terminal Finish :
Tin (Sn)
Frequency - Transition :
4MHz
Current - Collector Cutoff (Max) :
5mA
Transistor Application :
SWITCHING
JESD-609 Code :
e3
Operating Temperature :
-65°C~150°C TJ
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
Width :
6.22mm
Surface Mount :
yes
Collector Emitter Saturation Voltage :
2V
Case Connection :
COLLECTOR
Emitter Base Voltage (VEBO) :
5V
Max Power Dissipation :
1.75W
Collector Emitter Voltage (VCEO) :
120V
Terminal Form :
Gull wing
Mounting Type :
Surface Mount
Datasheets
MJD128T4
Introducing Transistors - Bipolar (BJT) - Single onsemi MJD128T4 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Number of Terminations:2, Number of Pins:3, Operating Temperature:-65°C~150°C TJ, Mounting Type:Surface Mount, MJD128T4 pinout, MJD128T4 datasheet PDF, MJD128T4 amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MJD128T4 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MJD128T4


PNP - Darlington -65°C~150°C TJ 5mA 1 Elements 2 Terminations SILICON TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount

MJD128T4G Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 1000 @ 4A 4V.The collector emitter saturation voltage is 2V, which allows for maximum design flexibility.When VCE saturation is 4V @ 80mA, 8A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -8A.A maximum collector current of 8A volts can be achieved.

MJD128T4G Features


the DC current gain for this device is 1000 @ 4A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 4V @ 80mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is -8A


MJD128T4G Applications


There are a lot of ON Semiconductor
MJD128T4G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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