MJD128T4
- Mfr.Part #
- MJD128T4
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS PNP DARL 120V 8A DPAK
- Stock
- 19,248
- In Stock :
- 19,248
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Published :
- 2007
- JESD-30 Code :
- R-PSSO-G2
- Collector Emitter Breakdown Voltage :
- 120V
- Halogen Free :
- Halogen Free
- Pin Count :
- 3
- Polarity :
- PNP
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Lead Free :
- Lead Free
- Collector Base Voltage (VCBO) :
- 120V
- Peak Reflow Temperature (Cel) :
- 260
- Current Rating :
- -8A
- Voltage - Rated DC :
- -120V
- Factory Lead Time :
- 8 Weeks
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 4A 4V
- RoHS Status :
- ROHS3 Compliant
- Length :
- 6.73mm
- Transistor Type :
- PNP - Darlington
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Height :
- 2.38mm
- Pbfree Code :
- yes
- Radiation Hardening :
- No
- Power Dissipation :
- 1.75W
- Max Collector Current :
- 8A
- Vce Saturation (Max) @ Ib, Ic :
- 4V @ 80mA, 8A
- Number of Terminations :
- 2
- Number of Pins :
- 3
- REACH SVHC :
- No SVHC
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Packaging :
- Tape and Reel (TR)
- Terminal Finish :
- Tin (Sn)
- Frequency - Transition :
- 4MHz
- Current - Collector Cutoff (Max) :
- 5mA
- Transistor Application :
- SWITCHING
- JESD-609 Code :
- e3
- Operating Temperature :
- -65°C~150°C TJ
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Width :
- 6.22mm
- Surface Mount :
- yes
- Collector Emitter Saturation Voltage :
- 2V
- Case Connection :
- COLLECTOR
- Emitter Base Voltage (VEBO) :
- 5V
- Max Power Dissipation :
- 1.75W
- Collector Emitter Voltage (VCEO) :
- 120V
- Terminal Form :
- Gull wing
- Mounting Type :
- Surface Mount
- Datasheets
- MJD128T4

PNP - Darlington -65°C~150°C TJ 5mA 1 Elements 2 Terminations SILICON TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
MJD128T4G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 1000 @ 4A 4V.The collector emitter saturation voltage is 2V, which allows for maximum design flexibility.When VCE saturation is 4V @ 80mA, 8A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -8A.A maximum collector current of 8A volts can be achieved.
MJD128T4G Features
the DC current gain for this device is 1000 @ 4A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 4V @ 80mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is -8A
MJD128T4G Applications
There are a lot of ON Semiconductor
MJD128T4G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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