MJD127TF
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- Mfr.Part #
- MJD127TF
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS PNP DARL 100V 8A TO252-3
- Stock
- 44,469
- In Stock ：
- 44,469
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 4V @ 80mA, 8A
- Element Configuration :
- Single
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- JESD-30 Code :
- R-PSSO-G2
- Terminal Form :
- Gull wing
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Factory Lead Time :
- 11 Weeks
- Published :
- 2013
- Mounting Type :
- Surface Mount
- Voltage - Rated DC :
- -100V
- Length :
- 6.6mm
- Base Part Number :
- MJD127
- Operating Temperature :
- 150°C TJ
- Collector Emitter Saturation Voltage :
- 2V
- Number of Elements :
- 1
- Collector Emitter Voltage (VCEO) :
- 100V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Collector Base Voltage (VCBO) :
- -100V
- Number of Terminations :
- 2
- Current - Collector Cutoff (Max) :
- 10μA
- JESD-609 Code :
- e3
- Height :
- 2.3mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 4A 4V
- Width :
- 6.1mm
- Max Breakdown Voltage :
- 100V
- Mount :
- Surface Mount
- Pbfree Code :
- yes
- RoHS Status :
- RoHS Compliant
- Polarity :
- PNP
- hFE Min :
- 1000
- Radiation Hardening :
- No
- Terminal Finish :
- Tin (Sn)
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 5 days ago)
- REACH SVHC :
- No SVHC
- Transistor Type :
- PNP - Darlington
- Emitter Base Voltage (VEBO) :
- -5V
- Max Collector Current :
- 8A
- Max Power Dissipation :
- 1.75W
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Breakdown Voltage :
- 100V
- Current Rating :
- -8A
- Weight :
- 260.37mg
- Power Dissipation :
- 1.75W
- Lead Free :
- Lead Free
- Datasheets
- MJD127TF
PNP - Darlington 150°C TJ 10μA 1 Elements 2 Terminations SILICON TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
MJD127TF Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 1000 @ 4A 4V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 2V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 4V @ 80mA, 8A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.Its current rating is -8A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Single BJT transistor can take a breakdown input voltage of 100V volts.During maximum operation, collector current can be as low as 8A volts.
MJD127TF Features
the DC current gain for this device is 1000 @ 4A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 4V @ 80mA, 8A
the emitter base voltage is kept at -5V
the current rating of this device is -8A
MJD127TF Applications
There are a lot of ON Semiconductor
MJD127TF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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