MJD127TF
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- Mfr.Part #
- MJD127TF
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS PNP DARL 100V 8A DPAK
- Stock
- 44,469
- In Stock ：
- 44,469
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Breakdown Voltage :
- 100V
- Current Rating :
- -8A
- Base Part Number :
- MJD127
- Max Collector Current :
- 8A
- JESD-30 Code :
- R-PSSO-G2
- Radiation Hardening :
- No
- Pbfree Code :
- yes
- hFE Min :
- 1000
- ECCN Code :
- EAR99
- RoHS Status :
- RoHS Compliant
- Packaging :
- Tape and Reel (TR)
- Published :
- 2013
- Collector Base Voltage (VCBO) :
- -100V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Emitter Base Voltage (VEBO) :
- -5V
- Terminal Form :
- Gull wing
- Factory Lead Time :
- 11 Weeks
- Operating Temperature :
- 150°C TJ
- Power Dissipation :
- 1.75W
- JESD-609 Code :
- e3
- Number of Terminations :
- 2
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 5 days ago)
- Polarity :
- PNP
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Surface Mount
- Mounting Type :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 100V
- Current - Collector Cutoff (Max) :
- 10μA
- Element Configuration :
- Single
- Voltage - Rated DC :
- -100V
- Height :
- 2.3mm
- Collector Emitter Breakdown Voltage :
- 100V
- Vce Saturation (Max) @ Ib, Ic :
- 4V @ 80mA, 8A
- Terminal Finish :
- Tin (Sn)
- Max Power Dissipation :
- 1.75W
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- Length :
- 6.6mm
- Width :
- 6.1mm
- Transistor Type :
- PNP - Darlington
- REACH SVHC :
- No SVHC
- Collector Emitter Saturation Voltage :
- 2V
- Weight :
- 260.37mg
- Number of Pins :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 4A 4V
- Datasheets
- MJD127TF
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PNP - Darlington 150°C TJ 10μA 1 Elements 2 Terminations SILICON TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
MJD127TF Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 1000 @ 4A 4V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 2V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 4V @ 80mA, 8A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.Its current rating is -8A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Single BJT transistor can take a breakdown input voltage of 100V volts.During maximum operation, collector current can be as low as 8A volts.
MJD127TF Features
the DC current gain for this device is 1000 @ 4A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 4V @ 80mA, 8A
the emitter base voltage is kept at -5V
the current rating of this device is -8A
MJD127TF Applications
There are a lot of ON Semiconductor
MJD127TF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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