MJD127G
- Mfr.Part #
- MJD127G
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS PNP DARL 100V 8A DPAK
- Stock
- 107,253
- In Stock :
- 107,253
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Emitter Base Voltage (VEBO) :
- 5V
- RoHS Status :
- ROHS3 Compliant
- Collector Base Voltage (VCBO) :
- 100V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Published :
- 2002
- ECCN Code :
- EAR99
- Pin Count :
- 3
- Number of Elements :
- 1
- Number of Terminations :
- 2
- Factory Lead Time :
- 8 Weeks
- Max Power Dissipation :
- 1.75W
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Voltage - Rated DC :
- -100V
- Case Connection :
- COLLECTOR
- Length :
- 6.73mm
- Collector Emitter Saturation Voltage :
- 2V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Surface Mount :
- yes
- JESD-609 Code :
- e3
- JESD-30 Code :
- R-PSSO-G2
- Polarity :
- PNP
- Collector Emitter Breakdown Voltage :
- 100V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 4A 4V
- Terminal Finish :
- Tin (Sn)
- Manufacturer Package Identifier :
- CASE 369C ISSUE F
- Width :
- 6.22mm
- Packaging :
- Tube
- Base Part Number :
- MJD127
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- Pbfree Code :
- yes
- Continuous Collector Current :
- 8A
- Peak Reflow Temperature (Cel) :
- 260
- Max Collector Current :
- 8A
- Radiation Hardening :
- No
- Collector Emitter Voltage (VCEO) :
- 100V
- Height :
- 2.38mm
- Vce Saturation (Max) @ Ib, Ic :
- 4V @ 80mA, 8A
- Current Rating :
- -8A
- Transistor Type :
- PNP - Darlington
- Element Configuration :
- Single
- Terminal Form :
- Gull wing
- Power Dissipation :
- 1.75W
- Number of Pins :
- 3
- Operating Temperature :
- -65°C~150°C TJ
- Halogen Free :
- Halogen Free
- Weight :
- 4.535924g
- Mounting Type :
- Surface Mount
- Lead Free :
- Lead Free
- REACH SVHC :
- No SVHC
- Lifecycle Status :
- ACTIVE (Last Updated: 16 hours ago)
- Transition Frequency :
- 4MHz
- Frequency - Transition :
- 4MHz
- Current - Collector Cutoff (Max) :
- 10μA
- Datasheets
- MJD127G

PNP - Darlington -65°C~150°C TJ 10μA 1 Elements 2 Terminations SILICON TO-252-3, DPak (2 Leads + Tab), SC-63 Tube Surface Mount
MJD127G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 1000 @ 4A 4V.With a collector emitter saturation voltage of 2V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 4V @ 80mA, 8A.In order to achieve high efficiency, the continuous collector voltage should be kept at 8A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -8A.A transition frequency of 4MHz is present in the part.Collector current can be as low as 8A volts at its maximum.
MJD127G Features
the DC current gain for this device is 1000 @ 4A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 4V @ 80mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is -8A
a transition frequency of 4MHz
MJD127G Applications
There are a lot of ON Semiconductor
MJD127G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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