MJD122TF

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Height :

2.3mm

Max Breakdown Voltage :

100V

Length :

6.6mm

Emitter Base Voltage (VEBO) :

5V

Collector Emitter Saturation Voltage :

2V

Vce Saturation (Max) @ Ib, Ic :

4V @ 80mA, 8A

Mount :

Surface Mount

Weight :

260.37mg

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Breakdown Voltage :

100V

Operating Temperature :

150°C TJ

Voltage - Rated DC :

100V

Number of Pins :

3

Max Collector Current :

8A

Current - Collector Cutoff (Max) :

10μA

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Packaging :

Tape and Reel (TR)

Published :

2009

DC Current Gain (hFE) (Min) @ Ic, Vce :

1000 @ 4A 4V

JESD-30 Code :

R-PSSO-G2

JESD-609 Code :

e3

Lead Free :

Lead Free

hFE Min :

1000

REACH SVHC :

No SVHC

Transistor Element Material :

SILICON

Radiation Hardening :

No

Terminal Form :

Gull wing

Collector Base Voltage (VCBO) :

100V

Max Power Dissipation :

1.75W

Current Rating :

8A

Width :

6.1mm

Factory Lead Time :

14 Weeks

Terminal Finish :

Tin (Sn)

RoHS Status :

ROHS3 Compliant

Number of Terminations :

2

Number of Elements :

1

Transistor Type :

NPN - Darlington

Polarity :

NPN

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 5 days ago)

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Collector Emitter Voltage (VCEO) :

100V

Base Part Number :

MJD122

Pbfree Code :

yes