MJD122G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Number of Elements :

1

Transistor Application :

SWITCHING

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Length :

6.73mm

Lead Free :

Lead Free

Time@Peak Reflow Temperature-Max (s) :

40

Number of Terminations :

2

JESD-609 Code :

e3

Operating Temperature :

-65°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

260

Collector Emitter Voltage (VCEO) :

100V

Terminal Form :

Gull wing

Halogen Free :

Halogen Free

hFE Min :

1000

Emitter Base Voltage (VEBO) :

5V

Transition Frequency :

4MHz

ECCN Code :

EAR99

Number of Pins :

3

Max Power Dissipation :

1.75W

Width :

6.22mm

Vce Saturation (Max) @ Ib, Ic :

4V @ 80mA, 8A

Packaging :

Tube

Collector Base Voltage (VCBO) :

100V

Element Configuration :

Single

Contact Plating :

Tin

Height :

2.38mm

Surface Mount :

yes

Frequency - Transition :

4MHz

JESD-30 Code :

R-PSSO-G2

Pin Count :

3

Polarity :

NPN

DC Current Gain (hFE) (Min) @ Ic, Vce :

1000 @ 4A 4V

Continuous Collector Current :

8A

Weight :

4.535924g

Transistor Type :

NPN - Darlington

Radiation Hardening :

No

Published :

2005

Current - Collector Cutoff (Max) :

10μA

Collector Emitter Saturation Voltage :

2V

Current Rating :

8A

Pbfree Code :

yes

REACH SVHC :

No SVHC

Voltage - Rated DC :

100V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

1.75W

Transistor Element Material :

SILICON

Max Collector Current :

8A

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Factory Lead Time :

8 Weeks

Base Part Number :

MJD122

Case Connection :

COLLECTOR

Mounting Type :

Surface Mount

Collector Emitter Breakdown Voltage :

100V