MJD122-1
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- Mfr.Part #
- MJD122-1
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- TRANS NPN DARL 100V 8A TO251
- Stock
- 1,664
- In Stock ：
- 1,664
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 10μA
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 3
- Element Configuration :
- Single
- Radiation Hardening :
- No
- Terminal Finish :
- Tin (Sn)
- Collector Emitter Saturation Voltage :
- 2V
- Pin Count :
- 3
- Operating Temperature :
- 150°C TJ
- Mount :
- Through Hole
- hFE Min :
- 100
- Vce Saturation (Max) @ Ib, Ic :
- 4V @ 80mA, 8A
- Packaging :
- Bulk
- Factory Lead Time :
- 8 Weeks
- JESD-30 Code :
- R-PSIP-T3
- Polarity :
- NPN
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Mounting Type :
- Through Hole
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Max Collector Current :
- 8A
- Transistor Type :
- NPN - Darlington
- Peak Reflow Temperature (Cel) :
- 260
- Base Part Number :
- MJD122
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 4A 4V
- Transistor Application :
- SWITCHING
- Max Power Dissipation :
- 20W
- Collector Base Voltage (VCBO) :
- 100V
- Collector Emitter Breakdown Voltage :
- 100V
- Lead Free :
- Lead Free
- ECCN Code :
- EAR99
- Max Breakdown Voltage :
- 100V
- Power Dissipation :
- 20W
- Number of Elements :
- 1
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Emitter Base Voltage (VEBO) :
- 5V
- Transistor Element Material :
- SILICON
- Collector Emitter Voltage (VCEO) :
- 100V
- Case Connection :
- COLLECTOR
- Datasheets
- MJD122-1
NPN - Darlington 150°C TJ 10μA 1 Elements 3 Terminations SILICON TO-251-3 Short Leads, IPak, TO-251AA Bulk Through Hole
MJD122-1 Overview
In this device, the DC current gain is 1000 @ 4A 4V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 2V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 4V @ 80mA, 8A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.An input voltage of 100V volts is the breakdown voltage.Maximum collector currents can be below 8A volts.
MJD122-1 Features
the DC current gain for this device is 1000 @ 4A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 4V @ 80mA, 8A
the emitter base voltage is kept at 5V
MJD122-1 Applications
There are a lot of STMicroelectronics
MJD122-1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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