MJD117T4G

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Mfr.Part #
MJD117T4G
Manufacturer
onsemi
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
TRANS PNP DARL 100V 2A DPAK
Stock
11,479
In Stock :
11,479

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Lead Free :
Lead Free
Emitter Base Voltage (VEBO) :
5V
Height :
2.38mm
Base Part Number :
MJD117
Lifecycle Status :
ACTIVE (Last Updated: 4 days ago)
Pbfree Code :
yes
Terminal Finish :
Tin (Sn)
Radiation Hardening :
No
Transistor Application :
SWITCHING
Collector Emitter Voltage (VCEO) :
100V
Transition Frequency :
25MHz
Number of Pins :
3
Power Dissipation :
20W
Current - Collector Cutoff (Max) :
20μA
Voltage - Rated DC :
-100V
Time@Peak Reflow Temperature-Max (s) :
40
Packaging :
Cut Tape (CT)
hFE Min :
1000
Max Collector Current :
2A
Transistor Type :
PNP - Darlington
Max Power Dissipation :
1.75W
Number of Elements :
1
DC Current Gain (hFE) (Min) @ Ic, Vce :
1000 @ 2A 3V
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Length :
6.73mm
Number of Terminations :
2
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Max Breakdown Voltage :
100V
Current Rating :
2A
REACH SVHC :
No SVHC
JESD-30 Code :
R-PSSO-G2
Width :
6.22mm
Operating Temperature :
-65°C~150°C TJ
JESD-609 Code :
e3
Frequency - Transition :
25MHz
Continuous Collector Current :
2A
ECCN Code :
EAR99
Transistor Element Material :
SILICON
Terminal Form :
Gull wing
Factory Lead Time :
8 Weeks
Collector Base Voltage (VCBO) :
100V
Pin Count :
3
RoHS Status :
ROHS3 Compliant
Peak Reflow Temperature (Cel) :
260
Vce Saturation (Max) @ Ib, Ic :
3V @ 40mA, 4A
Surface Mount :
yes
Element Configuration :
Single
Case Connection :
COLLECTOR
Collector Emitter Saturation Voltage :
2V
Collector Emitter Breakdown Voltage :
100V
Polarity :
PNP
Halogen Free :
Halogen Free
Mounting Type :
Surface Mount
Published :
2001
Datasheets
MJD117T4G
Introducing Transistors - Bipolar (BJT) - Single onsemi MJD117T4G from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:MJD117, Number of Pins:3, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Number of Terminations:2, Operating Temperature:-65°C~150°C TJ, Mounting Type:Surface Mount, MJD117T4G pinout, MJD117T4G datasheet PDF, MJD117T4G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MJD117T4G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MJD117T4G


PNP - Darlington -65°C~150°C TJ 20μA 1 Elements 2 Terminations SILICON TO-252-3, DPak (2 Leads + Tab), SC-63 Cut Tape (CT) Surface Mount

MJD117T4G Overview


DC current gain in this device equals 1000 @ 2A 3V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 2V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 3V @ 40mA, 4A.Single BJT transistor is essential to maintain the continuous collector voltage at 2A to achieve high efficiency.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 2A current rating.As a result, the part has a transition frequency of 25MHz.Breakdown input voltage is 100V volts.In extreme cases, the collector current can be as low as 2A volts.

MJD117T4G Features


the DC current gain for this device is 1000 @ 2A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 40mA, 4A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
a transition frequency of 25MHz


MJD117T4G Applications


There are a lot of ON Semiconductor
MJD117T4G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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