MJD117T4G
- Mfr.Part #
- MJD117T4G
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS PNP DARL 100V 2A DPAK
- Stock
- 11,479
- In Stock :
- 11,479
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lead Free :
- Lead Free
- Emitter Base Voltage (VEBO) :
- 5V
- Height :
- 2.38mm
- Base Part Number :
- MJD117
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Pbfree Code :
- yes
- Terminal Finish :
- Tin (Sn)
- Radiation Hardening :
- No
- Transistor Application :
- SWITCHING
- Collector Emitter Voltage (VCEO) :
- 100V
- Transition Frequency :
- 25MHz
- Number of Pins :
- 3
- Power Dissipation :
- 20W
- Current - Collector Cutoff (Max) :
- 20μA
- Voltage - Rated DC :
- -100V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Packaging :
- Cut Tape (CT)
- hFE Min :
- 1000
- Max Collector Current :
- 2A
- Transistor Type :
- PNP - Darlington
- Max Power Dissipation :
- 1.75W
- Number of Elements :
- 1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 2A 3V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Length :
- 6.73mm
- Number of Terminations :
- 2
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Breakdown Voltage :
- 100V
- Current Rating :
- 2A
- REACH SVHC :
- No SVHC
- JESD-30 Code :
- R-PSSO-G2
- Width :
- 6.22mm
- Operating Temperature :
- -65°C~150°C TJ
- JESD-609 Code :
- e3
- Frequency - Transition :
- 25MHz
- Continuous Collector Current :
- 2A
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Terminal Form :
- Gull wing
- Factory Lead Time :
- 8 Weeks
- Collector Base Voltage (VCBO) :
- 100V
- Pin Count :
- 3
- RoHS Status :
- ROHS3 Compliant
- Peak Reflow Temperature (Cel) :
- 260
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 40mA, 4A
- Surface Mount :
- yes
- Element Configuration :
- Single
- Case Connection :
- COLLECTOR
- Collector Emitter Saturation Voltage :
- 2V
- Collector Emitter Breakdown Voltage :
- 100V
- Polarity :
- PNP
- Halogen Free :
- Halogen Free
- Mounting Type :
- Surface Mount
- Published :
- 2001
- Datasheets
- MJD117T4G

PNP - Darlington -65°C~150°C TJ 20μA 1 Elements 2 Terminations SILICON TO-252-3, DPak (2 Leads + Tab), SC-63 Cut Tape (CT) Surface Mount
MJD117T4G Overview
DC current gain in this device equals 1000 @ 2A 3V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 2V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 3V @ 40mA, 4A.Single BJT transistor is essential to maintain the continuous collector voltage at 2A to achieve high efficiency.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 2A current rating.As a result, the part has a transition frequency of 25MHz.Breakdown input voltage is 100V volts.In extreme cases, the collector current can be as low as 2A volts.
MJD117T4G Features
the DC current gain for this device is 1000 @ 2A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 40mA, 4A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
a transition frequency of 25MHz
MJD117T4G Applications
There are a lot of ON Semiconductor
MJD117T4G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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