MJD117T4

Manufacturer :

STMicroelectronics

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Emitter Saturation Voltage :

3V

Max Junction Temperature (Tj) :

150°C

Case Connection :

COLLECTOR

Pin Count :

3

Collector Emitter Breakdown Voltage :

-100V

Max Breakdown Voltage :

100V

Mounting Type :

Surface Mount

Power Dissipation :

20W

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Transistor Element Material :

SILICON

DC Current Gain (hFE) (Min) @ Ic, Vce :

1000 @ 2A 3V

Gain Bandwidth Product :

25MHz

Current - Collector Cutoff (Max) :

20μA

Collector Base Voltage (VCBO) :

100V

Number of Terminations :

2

JESD-30 Code :

R-PSSO-G2

Number of Pins :

3

RoHS Status :

ROHS3 Compliant

Current Rating :

-2A

Mount :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

30

Polarity :

PNP

Packaging :

Tape and Reel (TR)

REACH SVHC :

No SVHC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Width :

6.2mm

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Terminal Form :

Gull wing

Emitter Base Voltage (VEBO) :

5V

Transistor Type :

PNP - Darlington

Operating Temperature :

150°C TJ

Terminal Finish :

Matte Tin (Sn) - annealed

Length :

6.6mm

Collector Emitter Voltage (VCEO) :

100V

Element Configuration :

Single

Max Collector Current :

4A

Radiation Hardening :

No

JESD-609 Code :

e3

ECCN Code :

EAR99

Current - Collector (Ic) (Max) :

2A

Number of Elements :

1

Base Part Number :

MJD117

Peak Reflow Temperature (Cel) :

260

VCEsat-Max :

3 V

Voltage - Rated DC :

-100V

Height :

2.63mm

Factory Lead Time :

8 Weeks

Transistor Application :

SWITCHING

Vce Saturation (Max) @ Ib, Ic :

3V @ 40mA, 4A

hFE Min :

200

Max Power Dissipation :

20W