JAN2N2857

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Number of Terminations :

4

Factory Lead Time :

23 Weeks

Packaging :

Bulk

Configuration :

Single

Noise Figure (dB Typ @ f) :

4.5dB @ 450MHz

ECCN Code :

EAR99

RoHS Status :

Non-RoHS Compliant

Highest Frequency Band :

ULTRA HIGH FREQUENCY B

Power - Max :

200mW

Polarity/Channel Type :

NPN

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 3mA 1V

Terminal Finish :

Tin/Lead (Sn/Pb)

Collector-Base Capacitance-Max :

1pF

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Through Hole

JESD-609 Code :

e0

Terminal Form :

Wire

Transistor Type :

NPN

Series :

Military, MIL-PRF-19500/343

Voltage - Collector Emitter Breakdown (Max) :

15V

Gain :

12.5dB ~ 21dB @ 450MHz

Power Dissipation-Max (Abs) :

0.2W

Transistor Element Material :

SILICON

Published :

2007

Radiation Hardening :

No

Number of Pins :

4

Terminal Position :

BOTTOM

Max Collector Current :

40mA

Package / Case :

TO-72-3 Metal Can

Frequency - Transition :

500MHz

Mount :

Through Hole

Number of Elements :

1

Qualification Status :

Qualified

Operating Temperature :

-65°C~200°C TJ