JAN2N1613
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- Mfr.Part #
- JAN2N1613
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 30V 0.5A TO39
- Stock
- 30,517
- In Stock ：
- 30,517
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Series :
- Military, MIL-PRF-19500/181
- Terminal Position :
- BOTTOM
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 150mA 10V
- Max Collector Current :
- 500mA
- Collector Emitter Voltage (VCEO) :
- 30V
- Mounting Type :
- Through Hole
- Qualification Status :
- Qualified
- Collector Base Voltage (VCBO) :
- 75V
- Factory Lead Time :
- 22 Weeks
- Radiation Hardening :
- No
- Packaging :
- Bulk
- Max Power Dissipation :
- 800mW
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 7V
- Number of Pins :
- 3
- Polarity/Channel Type :
- NPN
- Terminal Form :
- Wire
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Pbfree Code :
- No
- Operating Temperature :
- -65°C~200°C TJ
- Pin Count :
- 2
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 15mA, 150mA
- Published :
- 2007
- Power Dissipation :
- 800mW
- RoHS Status :
- Non-RoHS Compliant
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Case Connection :
- COLLECTOR
- Transistor Element Material :
- SILICON
- Configuration :
- Single
- Mount :
- Through Hole
- JESD-609 Code :
- e0
- ECCN Code :
- EAR99
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Datasheets
- JAN2N1613
NPN -65°C~200°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN TO-205AD, TO-39-3 Metal Can Bulk Through Hole
JAN2N1613 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 40 @ 150mA 10V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 7V can result in a high level of efficiency.When collector current reaches its maximum, it can reach 500mA volts.
JAN2N1613 Features
the DC current gain for this device is 40 @ 150mA 10V
the vce saturation(Max) is 1.5V @ 15mA, 150mA
the emitter base voltage is kept at 7V
JAN2N1613 Applications
There are a lot of Microsemi Corporation
JAN2N1613 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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