JAN2N1613
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- Mfr.Part #
- JAN2N1613
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 30V 0.5A TO39
- Stock
- 30,517
- In Stock ：
- 30,517
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Terminations :
- 3
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Transistor Element Material :
- SILICON
- Packaging :
- Bulk
- Case Connection :
- COLLECTOR
- JESD-609 Code :
- e0
- Max Power Dissipation :
- 800mW
- Mounting Type :
- Through Hole
- RoHS Status :
- Non-RoHS Compliant
- Qualification Status :
- Qualified
- Published :
- 2007
- Series :
- Military, MIL-PRF-19500/181
- Operating Temperature :
- -65°C~200°C TJ
- Emitter Base Voltage (VEBO) :
- 7V
- Mount :
- Through Hole
- Terminal Position :
- BOTTOM
- ECCN Code :
- EAR99
- Polarity/Channel Type :
- NPN
- Number of Elements :
- 1
- Factory Lead Time :
- 22 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 2
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Radiation Hardening :
- No
- Collector Base Voltage (VCBO) :
- 75V
- Power Dissipation :
- 800mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 150mA 10V
- Max Collector Current :
- 500mA
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Terminal Form :
- Wire
- Collector Emitter Voltage (VCEO) :
- 30V
- Number of Pins :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 15mA, 150mA
- Configuration :
- Single
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Pbfree Code :
- No
- Transistor Type :
- NPN
- Datasheets
- JAN2N1613
NPN -65°C~200°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN TO-205AD, TO-39-3 Metal Can Bulk Through Hole
JAN2N1613 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 40 @ 150mA 10V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 7V can result in a high level of efficiency.When collector current reaches its maximum, it can reach 500mA volts.
JAN2N1613 Features
the DC current gain for this device is 40 @ 150mA 10V
the vce saturation(Max) is 1.5V @ 15mA, 150mA
the emitter base voltage is kept at 7V
JAN2N1613 Applications
There are a lot of Microsemi Corporation
JAN2N1613 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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