JAN2N1613
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- Mfr.Part #
- JAN2N1613
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 30V 0.5A TO39
- Stock
- 30,517
- In Stock ：
- 30,517
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Form :
- Wire
- Power Dissipation :
- 800mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Through Hole
- Pbfree Code :
- No
- Max Power Dissipation :
- 800mW
- Emitter Base Voltage (VEBO) :
- 7V
- Factory Lead Time :
- 22 Weeks
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 150mA 10V
- JESD-609 Code :
- e0
- Terminal Position :
- BOTTOM
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Pin Count :
- 2
- Collector Emitter Voltage (VCEO) :
- 30V
- Configuration :
- Single
- Published :
- 2007
- Max Collector Current :
- 500mA
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Mounting Type :
- Through Hole
- Number of Pins :
- 3
- Polarity/Channel Type :
- NPN
- Operating Temperature :
- -65°C~200°C TJ
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Collector Base Voltage (VCBO) :
- 75V
- Packaging :
- Bulk
- Series :
- Military, MIL-PRF-19500/181
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 15mA, 150mA
- Case Connection :
- COLLECTOR
- RoHS Status :
- Non-RoHS Compliant
- Qualification Status :
- Qualified
- ECCN Code :
- EAR99
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Radiation Hardening :
- No
- Transistor Type :
- NPN
- Number of Terminations :
- 3
- Datasheets
- JAN2N1613
NPN -65°C~200°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN TO-205AD, TO-39-3 Metal Can Bulk Through Hole
JAN2N1613 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 40 @ 150mA 10V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 7V can result in a high level of efficiency.When collector current reaches its maximum, it can reach 500mA volts.
JAN2N1613 Features
the DC current gain for this device is 40 @ 150mA 10V
the vce saturation(Max) is 1.5V @ 15mA, 150mA
the emitter base voltage is kept at 7V
JAN2N1613 Applications
There are a lot of Microsemi Corporation
JAN2N1613 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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