JAN2N1613
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- Mfr.Part #
- JAN2N1613
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 30V 0.5A TO39
- Stock
- 30,517
- In Stock ：
- 30,517
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Element Material :
- SILICON
- Mount :
- Through Hole
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Pbfree Code :
- No
- Terminal Form :
- Wire
- Published :
- 2007
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- NPN
- RoHS Status :
- Non-RoHS Compliant
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Max Collector Current :
- 500mA
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 15mA, 150mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 150mA 10V
- Radiation Hardening :
- No
- Operating Temperature :
- -65°C~200°C TJ
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Power Dissipation :
- 800mW
- Packaging :
- Bulk
- Terminal Position :
- BOTTOM
- Qualification Status :
- Qualified
- Collector Base Voltage (VCBO) :
- 75V
- Case Connection :
- COLLECTOR
- Collector Emitter Voltage (VCEO) :
- 30V
- Factory Lead Time :
- 22 Weeks
- Emitter Base Voltage (VEBO) :
- 7V
- Mounting Type :
- Through Hole
- Polarity/Channel Type :
- NPN
- Package / Case :
- TO-205AD, TO-39-3 Metal Can
- Max Power Dissipation :
- 800mW
- Configuration :
- Single
- Pin Count :
- 2
- Series :
- Military, MIL-PRF-19500/181
- Number of Pins :
- 3
- Number of Terminations :
- 3
- JESD-609 Code :
- e0
- Datasheets
- JAN2N1613
NPN -65°C~200°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN TO-205AD, TO-39-3 Metal Can Bulk Through Hole
JAN2N1613 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 40 @ 150mA 10V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 7V can result in a high level of efficiency.When collector current reaches its maximum, it can reach 500mA volts.
JAN2N1613 Features
the DC current gain for this device is 40 @ 150mA 10V
the vce saturation(Max) is 1.5V @ 15mA, 150mA
the emitter base voltage is kept at 7V
JAN2N1613 Applications
There are a lot of Microsemi Corporation
JAN2N1613 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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