JAN2N1711
- Mfr.Part #
- JAN2N1711
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AA, TO-5-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 30V 0.5A TO5
- Stock
- 23,151
- In Stock :
- 23,151
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Position :
- BOTTOM
- Mount :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Max Collector Current :
- 500mA
- Package / Case :
- TO-205AA, TO-5-3 Metal Can
- Pbfree Code :
- No
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 2 weeks ago)
- Polarity/Channel Type :
- NPN
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Terminal Form :
- Wire
- Configuration :
- Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Published :
- 2002
- JESD-609 Code :
- e0
- Series :
- Military, MIL-PRF-19500/225
- Radiation Hardening :
- No
- Qualification Status :
- Qualified
- Transistor Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 7V
- Power Dissipation :
- 800mW
- ECCN Code :
- EAR99
- Operating Temperature :
- -65°C~200°C TJ
- Number of Elements :
- 1
- Collector Base Voltage (VCBO) :
- 75V
- Mounting Type :
- Through Hole
- Transistor Element Material :
- SILICON
- Max Power Dissipation :
- 800mW
- Pin Count :
- 3
- RoHS Status :
- Non-RoHS Compliant
- Packaging :
- Bulk
- Case Connection :
- COLLECTOR
- Number of Terminations :
- 3
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Collector Emitter Voltage (VCEO) :
- 30V
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 15mA, 150mA
- Datasheets
- JAN2N1711
NPN -65°C~200°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON NPN TO-205AA, TO-5-3 Metal Can Bulk Through Hole
JAN2N1711 Overview
In this device, the DC current gain is 100 @ 150mA 10V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.5V @ 15mA, 150mA.With the emitter base voltage set at 7V, an efficient operation can be achieved.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
JAN2N1711 Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1.5V @ 15mA, 150mA
the emitter base voltage is kept at 7V
JAN2N1711 Applications
There are a lot of Microsemi Corporation
JAN2N1711 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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