JAN2N1711
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- Mfr.Part #
- JAN2N1711
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AA, TO-5-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 30V 0.5A TO5
- Stock
- 23,151
- In Stock ：
- 23,151
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-205AA, TO-5-3 Metal Can
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- RoHS Status :
- Non-RoHS Compliant
- Pin Count :
- 3
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Emitter Base Voltage (VEBO) :
- 7V
- Case Connection :
- COLLECTOR
- Qualification Status :
- Qualified
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Pbfree Code :
- No
- Number of Pins :
- 3
- JESD-609 Code :
- e0
- Number of Elements :
- 1
- Terminal Form :
- Wire
- Max Power Dissipation :
- 800mW
- Max Collector Current :
- 500mA
- Series :
- Military, MIL-PRF-19500/225
- Polarity/Channel Type :
- NPN
- Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 30V
- Collector Base Voltage (VCBO) :
- 75V
- Operating Temperature :
- -65°C~200°C TJ
- Power Dissipation :
- 800mW
- Radiation Hardening :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 15mA, 150mA
- Mounting Type :
- Through Hole
- Transistor Type :
- NPN
- Packaging :
- Bulk
- Terminal Position :
- BOTTOM
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 2 weeks ago)
- Published :
- 2002
- Number of Terminations :
- 3
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Datasheets
- JAN2N1711
NPN -65°C~200°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON NPN TO-205AA, TO-5-3 Metal Can Bulk Through Hole
JAN2N1711 Overview
In this device, the DC current gain is 100 @ 150mA 10V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.5V @ 15mA, 150mA.With the emitter base voltage set at 7V, an efficient operation can be achieved.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
JAN2N1711 Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1.5V @ 15mA, 150mA
the emitter base voltage is kept at 7V
JAN2N1711 Applications
There are a lot of Microsemi Corporation
JAN2N1711 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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