JAN2N1711
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- Mfr.Part #
- JAN2N1711
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AA, TO-5-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 30V 0.5A TO5
- Stock
- 23,151
- In Stock ：
- 23,151
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- ECCN Code :
- EAR99
- Published :
- 2002
- Transistor Type :
- NPN
- Package / Case :
- TO-205AA, TO-5-3 Metal Can
- RoHS Status :
- Non-RoHS Compliant
- Mount :
- Through Hole
- Terminal Form :
- Wire
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Pbfree Code :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 15mA, 150mA
- Number of Terminations :
- 3
- Max Power Dissipation :
- 800mW
- Case Connection :
- COLLECTOR
- Collector Base Voltage (VCBO) :
- 75V
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 2 weeks ago)
- Emitter Base Voltage (VEBO) :
- 7V
- Mounting Type :
- Through Hole
- Packaging :
- Bulk
- JESD-609 Code :
- e0
- Polarity/Channel Type :
- NPN
- Configuration :
- Single
- Operating Temperature :
- -65°C~200°C TJ
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Power Dissipation :
- 800mW
- Terminal Position :
- BOTTOM
- Collector Emitter Voltage (VCEO) :
- 30V
- Number of Pins :
- 3
- Series :
- Military, MIL-PRF-19500/225
- Qualification Status :
- Qualified
- Number of Elements :
- 1
- Pin Count :
- 3
- Max Collector Current :
- 500mA
- Datasheets
- JAN2N1711
NPN -65°C~200°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON NPN TO-205AA, TO-5-3 Metal Can Bulk Through Hole
JAN2N1711 Overview
In this device, the DC current gain is 100 @ 150mA 10V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.5V @ 15mA, 150mA.With the emitter base voltage set at 7V, an efficient operation can be achieved.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
JAN2N1711 Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1.5V @ 15mA, 150mA
the emitter base voltage is kept at 7V
JAN2N1711 Applications
There are a lot of Microsemi Corporation
JAN2N1711 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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