JAN2N1711
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- Mfr.Part #
- JAN2N1711
- Manufacturer
- Microchip Technology
- Package / Case
- TO-205AA, TO-5-3 Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 30V 0.5A TO5
- Stock
- 23,151
- In Stock ：
- 23,151
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Number of Terminations :
- 3
- Number of Pins :
- 3
- Mount :
- Through Hole
- Mounting Type :
- Through Hole
- Max Collector Current :
- 500mA
- RoHS Status :
- Non-RoHS Compliant
- Package / Case :
- TO-205AA, TO-5-3 Metal Can
- JESD-609 Code :
- e0
- Series :
- Military, MIL-PRF-19500/225
- ECCN Code :
- EAR99
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 15mA, 150mA
- Packaging :
- Bulk
- Qualification Status :
- Qualified
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 2 weeks ago)
- Pin Count :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- Wire
- Pbfree Code :
- No
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Terminal Position :
- BOTTOM
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 10V
- Transistor Type :
- NPN
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 800mW
- Published :
- 2002
- Operating Temperature :
- -65°C~200°C TJ
- Collector Base Voltage (VCBO) :
- 75V
- Configuration :
- Single
- Emitter Base Voltage (VEBO) :
- 7V
- Number of Elements :
- 1
- Collector Emitter Voltage (VCEO) :
- 30V
- Polarity/Channel Type :
- NPN
- Radiation Hardening :
- No
- Max Power Dissipation :
- 800mW
- Case Connection :
- COLLECTOR
- Datasheets
- JAN2N1711
NPN -65°C~200°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON NPN TO-205AA, TO-5-3 Metal Can Bulk Through Hole
JAN2N1711 Overview
In this device, the DC current gain is 100 @ 150mA 10V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.5V @ 15mA, 150mA.With the emitter base voltage set at 7V, an efficient operation can be achieved.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
JAN2N1711 Features
the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1.5V @ 15mA, 150mA
the emitter base voltage is kept at 7V
JAN2N1711 Applications
There are a lot of Microsemi Corporation
JAN2N1711 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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