JAN2N1486
- Mfr.Part #
- JAN2N1486
- Manufacturer
- Microchip Technology
- Package / Case
- TO-233AA, TO-8-3 Lens Top Metal Can
- Datasheet
- Download
- Description
- TRANS NPN 55V 3A TO8
- Stock
- 28,962
- In Stock :
- 28,962
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pbfree Code :
- No
- Number of Terminations :
- 3
- Current - Collector Cutoff (Max) :
- 15μA ICBO
- Number of Pins :
- 3
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Pin Count :
- 3
- Mount :
- Through Hole
- Packaging :
- Bulk
- Terminal Position :
- BOTTOM
- Package / Case :
- TO-233AA, TO-8-3 Lens Top Metal Can
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Case Connection :
- COLLECTOR
- Operating Temperature :
- -65°C~200°C TJ
- Collector Base Voltage (VCBO) :
- 100V
- Collector Emitter Voltage (VCEO) :
- 55V
- Published :
- 2002
- ECCN Code :
- EAR99
- RoHS Status :
- Non-RoHS Compliant
- Radiation Hardening :
- No
- Polarity/Channel Type :
- NPN
- JESD-609 Code :
- e0
- Max Collector Current :
- 3A
- Current - Collector (Ic) (Max) :
- 3A
- Max Power Dissipation :
- 1.75W
- Vce Saturation (Max) @ Ib, Ic :
- 750mV @ 40mA, 750mA
- Reference Standard :
- MIL-S-19500/180D
- Transistor Type :
- NPN
- Configuration :
- Single
- Series :
- Military, MIL-PRF-19500/207
- Qualification Status :
- Qualified
- Transition Frequency :
- 1.25MHz
- HTS Code :
- 8541.29.00.95
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 35 @ 750mA 4V
- Transistor Element Material :
- SILICON
- Terminal Form :
- Wire
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- Number of Elements :
- 1
- Datasheets
- JAN2N1486
NPN -65°C~200°C TJ 15μA ICBO 1 Elements 3 Terminations SILICON NPN TO-233AA, TO-8-3 Lens Top Metal Can Bulk Through Hole
JAN2N1486 Overview
This device has a DC current gain of 35 @ 750mA 4V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).In this part, there is a transition frequency of 1.25MHz.The maximum collector current is 3A volts.
JAN2N1486 Features
the DC current gain for this device is 35 @ 750mA 4V
the vce saturation(Max) is 750mV @ 40mA, 750mA
a transition frequency of 1.25MHz
JAN2N1486 Applications
There are a lot of Microsemi Corporation
JAN2N1486 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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