IXTH30N60P

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Mfr.Part #
IXTH30N60P
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 600V 30A TO247
Stock
482
In Stock :
482

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Continuous Drain Current (ID) :
30A
Power Dissipation (Max) :
540W (Tc)
Subcategory :
MOSFETs
Number of Elements :
1
Product Type :
MOSFET
Width :
5.3 mm
Transistor Application :
SWITCHING
Package :
Tube
Current Rating :
30A
Packaging :
Tube
Base Product Number :
IXTH30
Transistor Element Material :
SILICON
Polarity/Channel Type :
N-Channel
Pbfree Code :
yes
Operating Mode :
ENHANCEMENT MODE
Rise Time :
20ns
Supplier Device Package :
TO-247 (IXTH)
JEDEC-95 Code :
TO-247AD
Number of Channels :
1 Channel
RoHS Status :
ROHS3 Compliant
Configuration :
Single
Minimum Operating Temperature :
- 55 C
Published :
2006
Rds On (Max) @ Id, Vgs :
240m Ω @ 15A, 10V
Terminal Position :
Single
DS Breakdown Voltage-Min :
600 V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Operating Temperature :
-55°C~150°C TJ
Current - Continuous Drain (Id) @ 25°C :
30A Tc
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Terminal Form :
THROUGH-HOLE
Mounting Type :
Through Hole
Drain to Source Voltage (Vdss) :
600V
Pulsed Drain Current-Max (IDM) :
80A
Package / Case :
TO-247-3
Case Connection :
DRAIN
JESD-30 Code :
R-PSFM-T3
Series :
PolarHV™
Power Dissipation :
540W
FET Feature :
--
Fall Time (Typ) :
25 ns
Qualification Status :
Not Qualified
Voltage - Rated DC :
600V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Vgs (Max) :
±30V
Transistor Type :
1 N-Channel
Input Capacitance (Ciss) (Max) @ Vds :
5050pF @ 25V
Product Category :
MOSFET
Height :
21.46 mm
Number of Pins :
3
Drain-source On Resistance-Max :
0.24Ohm
Pin Count :
3
Number of Terminations :
3
Transistor Polarity :
N-Channel
Mount :
Through Hole
Length :
16.26 mm
Element Configuration :
Single
Mounting Style :
Through Hole
Maximum Operating Temperature :
+ 150 C
JESD-609 Code :
e1
Tradename :
PolarHV
Power Dissipation-Max :
540W Tc
Type :
PolarHV Power MOSFET
Drive Voltage (Max Rds On,Min Rds On) :
10V
Channel Mode :
Enhancement
Reach Compliance Code :
Compliant
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Factory Lead Time :
28 Weeks
Manufacturer :
IXYS
Brand :
IXYS
Surface Mount :
No
Gate Charge (Qg) (Max) @ Vgs :
82nC @ 10V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
RoHS :
Details
Package Shape :
RECTANGULAR
Gate to Source Voltage (Vgs) :
30V
Drain to Source Breakdown Voltage :
600V
Product Status :
Active
Vgs(th) (Max) @ Id :
5V @ 250μA
Number of Terminals :
3
Avalanche Energy Rating (Eas) :
1500 mJ
Turn-Off Delay Time :
80 ns
Lead Free :
Lead Free
FET Type :
N-Channel
Additional Feature :
AVALANCHE RATED
Datasheets
IXTH30N60P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTH30N60P from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Package / Case:TO-247-3, Number of Pins:3, Number of Terminations:3, Type:PolarHV Power MOSFET, IXTH30N60P pinout, IXTH30N60P datasheet PDF, IXTH30N60P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTH30N60P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTH30N60P


N-Channel Tube 240m Ω @ 15A, 10V ±30V 5050pF @ 25V 82nC @ 10V 600V TO-247-3

IXTH30N60P Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 1500 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 5050pF @ 25V.This device has a continuous drain current (ID) of [30A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=600V, the drain-source breakdown voltage is 600V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 80 ns.A maximum pulsed drain current of 80A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 600 V.In order to operate this transistor, a voltage of 600V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXTH30N60P Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 30A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 80 ns
based on its rated peak drain current 80A.
a 600V drain to source voltage (Vdss)


IXTH30N60P Applications


There are a lot of IXYS
IXTH30N60P applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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