IXTH10P60

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Mfr.Part #
IXTH10P60
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET P-CH 600V 10A TO247
Stock
32,646
In Stock :
32,646

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Additional Feature :
AVALANCHE RATED
Transistor Polarity :
P-Channel
Vgs (Max) :
±20V
Drain to Source Breakdown Voltage :
-600V
RoHS :
Details
Operating Mode :
ENHANCEMENT MODE
Case Connection :
DRAIN
Rds On (Max) @ Id, Vgs :
1 Ω @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs :
160nC @ 10V
Current - Continuous Drain (Id) @ 25°C :
10A Tc
Package / Case :
TO-247-3
Drain to Source Voltage (Vdss) :
600V
Transistor Element Material :
SILICON
FET Type :
P-Channel
Package :
Tube
Moisture Sensitivity Level (MSL) :
Not Applicable
Factory Lead Time :
5 Weeks
Configuration :
Single
Supplier Device Package :
TO-247 (IXTH)
Number of Terminations :
3
Element Configuration :
Single
Pin Count :
3
Reach Compliance Code :
Compliant
Mounting Type :
Through Hole
Gate to Source Voltage (Vgs) :
20V
Product Category :
MOSFET
Product Type :
MOSFET
Transistor Type :
1 P-Channel
Mounting Style :
Through Hole
Operating Temperature :
-55°C~150°C TJ
Rise Time :
27ns
Number of Elements :
1
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Base Product Number :
IXTH10
ECCN Code :
EAR99
Lead Free :
Lead Free
Continuous Drain Current (ID) :
10A
Input Capacitance (Ciss) (Max) @ Vds :
4700pF @ 25V
Brand :
IXYS
Drive Voltage (Max Rds On,Min Rds On) :
10V
Channel Mode :
Enhancement
Length :
16.26 mm
Power Dissipation :
300W
RoHS Status :
ROHS3 Compliant
Turn-Off Delay Time :
85 ns
Voltage - Rated DC :
-600V
Terminal Finish :
Matte Tin (Sn)
Qualification :
-
Minimum Operating Temperature :
- 55 C
Fall Time (Typ) :
35 ns
Series :
--
Vgs(th) (Max) @ Id :
5V @ 250μA
Channel Type :
P Channel
Product Status :
Active
Transistor Application :
SWITCHING
Published :
2010
Manufacturer :
IXYS
Power Dissipation-Max :
300W Tc
Current Rating :
-10A
Height :
21.46 mm
FET Feature :
--
Pbfree Code :
No
JESD-609 Code :
e3
Maximum Operating Temperature :
+ 150 C
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Pulsed Drain Current-Max (IDM) :
40A
Packaging :
Tube
Resistance :
1Ohm
Width :
5.3 mm
Mount :
Through Hole
Qualification Status :
Not Qualified
Continuous Drain Current Id :
10A
Number of Pins :
3
Power Dissipation (Max) :
300W (Tc)
Number of Channels :
1 Channel
Datasheets
IXTH10P60
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTH10P60 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-247-3, Number of Terminations:3, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Number of Pins:3, Number of Channels:1 Channel, IXTH10P60 pinout, IXTH10P60 datasheet PDF, IXTH10P60 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTH10P60 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTH10P60


P-Channel Tube 1 Ω @ 5A, 10V ±20V 4700pF @ 25V 160nC @ 10V 600V TO-247-3

IXTH10P60 Overview


The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 4700pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 10A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=-600V. And this device has -600V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 85 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 40A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Operating this transistor requires a 600V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IXTH10P60 Features


a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of -600V voltage
the turn-off delay time is 85 ns
based on its rated peak drain current 40A.
a 600V drain to source voltage (Vdss)


IXTH10P60 Applications


There are a lot of IXYS
IXTH10P60 applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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