IXTH10P60
- Mfr.Part #
- IXTH10P60
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET P-CH 600V 10A TO247
- Stock
- 32,646
- In Stock :
- 32,646
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Elements :
- 1
- Resistance :
- 1Ohm
- Continuous Drain Current Id :
- 10A
- Configuration :
- Single
- Transistor Element Material :
- SILICON
- FET Feature :
- --
- Power Dissipation :
- 300W
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- Pulsed Drain Current-Max (IDM) :
- 40A
- Series :
- --
- Turn-Off Delay Time :
- 85 ns
- Maximum Operating Temperature :
- + 150 C
- Number of Pins :
- 3
- Transistor Polarity :
- P-Channel
- Transistor Application :
- SWITCHING
- Voltage - Rated DC :
- -600V
- Pin Count :
- 3
- Mounting Style :
- Through Hole
- Pbfree Code :
- No
- Power Dissipation-Max :
- 300W Tc
- Manufacturer :
- IXYS
- Product Type :
- MOSFET
- Supplier Device Package :
- TO-247 (IXTH)
- Vgs (Max) :
- ±20V
- Base Product Number :
- IXTH10
- Package :
- Tube
- Qualification :
- -
- Drain to Source Breakdown Voltage :
- -600V
- Fall Time (Typ) :
- 35 ns
- RoHS Status :
- ROHS3 Compliant
- Channel Type :
- P Channel
- Reach Compliance Code :
- Compliant
- Drain to Source Voltage (Vdss) :
- 600V
- Rise Time :
- 27ns
- Operating Temperature :
- -55°C~150°C TJ
- Mount :
- Through Hole
- Case Connection :
- DRAIN
- Current - Continuous Drain (Id) @ 25°C :
- 10A Tc
- Transistor Type :
- 1 P-Channel
- JESD-609 Code :
- e3
- Additional Feature :
- AVALANCHE RATED
- Rds On (Max) @ Id, Vgs :
- 1 Ω @ 5A, 10V
- Qualification Status :
- Not Qualified
- Product Status :
- Active
- Published :
- 2010
- Packaging :
- Tube
- Terminal Finish :
- Matte Tin (Sn)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Channel Mode :
- Enhancement
- Moisture Sensitivity Level (MSL) :
- Not Applicable
- Current Rating :
- -10A
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Gate Charge (Qg) (Max) @ Vgs :
- 160nC @ 10V
- Gate to Source Voltage (Vgs) :
- 20V
- Package / Case :
- TO-247-3
- Number of Terminations :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Width :
- 5.3 mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- RoHS :
- Details
- Height :
- 21.46 mm
- Product Category :
- MOSFET
- Continuous Drain Current (ID) :
- 10A
- Mounting Type :
- Through Hole
- FET Type :
- P-Channel
- Element Configuration :
- Single
- Minimum Operating Temperature :
- - 55 C
- Number of Channels :
- 1 Channel
- Factory Lead Time :
- 5 Weeks
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation (Max) :
- 300W (Tc)
- Input Capacitance (Ciss) (Max) @ Vds :
- 4700pF @ 25V
- Length :
- 16.26 mm
- Brand :
- IXYS
- Datasheets
- IXTH10P60
IXTH10P60 Documents
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P-Channel Tube 1 Ω @ 5A, 10V ±20V 4700pF @ 25V 160nC @ 10V 600V TO-247-3
IXTH10P60 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 4700pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 10A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=-600V. And this device has -600V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 85 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 40A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Operating this transistor requires a 600V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IXTH10P60 Features
a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of -600V voltage
the turn-off delay time is 85 ns
based on its rated peak drain current 40A.
a 600V drain to source voltage (Vdss)
IXTH10P60 Applications
There are a lot of IXYS
IXTH10P60 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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