IXTH110N10L2

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

300 A

Mounting Style :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

10500pF @ 25V

Terminal Position :

Single

Rise Time :

130 ns

Gate Charge (Qg) (Max) @ Vgs :

260nC @ 10V

FET Type :

N-Channel

Vgs (Max) :

±20V

Drain Current-Max (Abs) (ID) :

110 A

Product Category :

MOSFET

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Factory Lead Time :

28 Weeks

Transistor Application :

SWITCHING

JEDEC-95 Code :

TO-247AD

JESD-609 Code :

e1

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Maximum Operating Temperature :

+ 150 C

Reach Compliance Code :

Unknown

Mounting Type :

Through Hole

FET Feature :

--

Transistor Element Material :

SILICON

Product Status :

Active

Drive Voltage (Max Rds On,Min Rds On) :

10V

Supplier Device Package :

TO-247 (IXTH)

Operating Temperature :

--

Packaging :

Bulk

Brand :

IXYS

Package :

Bulk

Series :

Linear L2™

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Continuous Drain Current (ID) :

110A

Manufacturer :

IXYS

Number of Elements :

1

Power Dissipation (Max) :

600W (Tc)

Case Connection :

DRAIN

Number of Pins :

3

Qualification Status :

Not Qualified

Minimum Operating Temperature :

- 55 C

Polarity/Channel Type :

N-Channel

Surface Mount :

No

Pbfree Code :

yes

DS Breakdown Voltage-Min :

100V

Lead Free :

Lead Free

JESD-30 Code :

R-PSFM-T3

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

RoHS :

Details

Mount :

Through Hole

Published :

2010

Number of Terminals :

3

Transistor Type :

1 N-Channel

Transistor Polarity :

N-Channel

Package / Case :

TO-247-3

Power Dissipation-Max (Abs) :

600 W

Number of Terminations :

3

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Pin Count :

3

Avalanche Energy Rating (Eas) :

3000 mJ

Current - Continuous Drain (Id) @ 25°C :

110A Tc

Operating Mode :

ENHANCEMENT MODE

Base Product Number :

IXTH110

Product Type :

MOSFET

Configuration :

SINGLE WITH BUILT-IN DIODE

Package Shape :

RECTANGULAR

Drain-source On Resistance-Max :

0.018Ohm

Channel Mode :

Enhancement

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Channels :

1 Channel

RoHS Status :

ROHS3 Compliant

Additional Feature :

AVALANCHE RATED

Drain to Source Voltage (Vdss) :

100V

Operating Temperature (Max) :

150°C

ECCN Code :

EAR99

Power Dissipation-Max :

600W Tc

Rds On (Max) @ Id, Vgs :

18m Ω @ 500mA, 10V

Terminal Form :

THROUGH-HOLE