IXTH102N15T

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

JEDEC-95 Code :

TO-247

Height :

21.46 mm

Gate Charge (Qg) (Max) @ Vgs :

87nC @ 10V

Surface Mount :

No

Width :

5.3 mm

Brand :

IXYS

Manufacturer :

IXYS

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Number of Terminations :

3

Case Connection :

DRAIN

Maximum Operating Temperature :

+ 175 C

Current - Continuous Drain (Id) @ 25°C :

102A Tc

Product Category :

MOSFET

Min Operating Temperature :

-55 °C

Additional Feature :

AVALANCHE RATED

RoHS :

Compliant

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Published :

2009

Drain Current-Max (Abs) (ID) :

102 A

Drain to Source Voltage (Vdss) :

150V

Base Product Number :

IXTH102

Pbfree Code :

yes

Drain to Source Breakdown Voltage :

150V

Package :

Tube

Max Operating Temperature :

175 °C

Power Dissipation-Max (Abs) :

455 W

Operating Temperature :

-55°C~175°C TJ

Turn-Off Delay Time :

25 ns

Series :

--

ECCN Code :

EAR99

Transistor Type :

1 N-Channel

Pin Count :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Position :

Single

Input Capacitance :

5.22 nF

Rds On (Max) @ Id, Vgs :

18m Ω @ 500mA, 10V

JESD-30 Code :

R-PSFM-T3

Drain-source On Resistance-Max :

0.018Ohm

Length :

16.26 mm

Max Power Dissipation :

455 W

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Transistor Polarity :

N-Channel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mounting Type :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Element Configuration :

Single

Package Shape :

RECTANGULAR

Packaging :

Tube

JESD-609 Code :

e1

Channel Mode :

Enhancement

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

5220pF @ 25V

Rds On Max :

18 mΩ

Drain to Source Resistance :

18 mΩ

Polarity/Channel Type :

N-Channel

Power Dissipation (Max) :

455W (Tc)

Vgs(th) (Max) @ Id :

5V @ 1mA

Product Type :

MOSFET

Power Dissipation-Max :

455W Tc

Package / Case :

TO-247-3

Configuration :

Single

Supplier Device Package :

TO-247 (IXTH)

Avalanche Energy Rating (Eas) :

750 mJ

Number of Elements :

1

Vgs (Max) :

±20V

Gate to Source Voltage (Vgs) :

20V

Reach Compliance Code :

Compliant

Qualification Status :

Not Qualified

Pulsed Drain Current-Max (IDM) :

300A

Minimum Operating Temperature :

- 55 C

DS Breakdown Voltage-Min :

150 V

Mount :

Through Hole

FET Feature :

--

Fall Time (Typ) :

22 ns

FET Type :

N-Channel

Rise Time :

14ns

Product Status :

Active

Mounting Style :

Through Hole

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Continuous Drain Current (ID) :

102A

Power Dissipation :

455W

Tradename :

HiPerFET

Number of Terminals :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Channels :

1 Channel

Terminal Form :

THROUGH-HOLE