IXTH10N100D2
- Mfr.Part #
- IXTH10N100D2
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 10A TO247
- Stock
- 19,978
- In Stock :
- 19,978
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 5320pF @ 25V
- FET Feature :
- Depletion Mode
- Qualification Status :
- Not Qualified
- FET Type :
- N-Channel
- Reach Compliance Code :
- Compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 200nC @ 5V
- Transistor Type :
- 1 N-Channel
- Continuous Drain Current (ID) :
- 10A
- Mount :
- Through Hole
- Product Type :
- MOSFET
- RoHS Status :
- ROHS3 Compliant
- Rds On (Max) @ Id, Vgs :
- 1.5 Ω @ 5A, 10V
- Product Status :
- Active
- Number of Terminations :
- 3
- Power Dissipation-Max :
- 695W Tc
- Current - Continuous Drain (Id) @ 25°C :
- 10A Tc
- Transistor Polarity :
- N-Channel
- Mounting Style :
- Through Hole
- Operating Mode :
- ENHANCEMENT MODE
- JEDEC-95 Code :
- TO-247
- Vgs(th) (Max) @ Id :
- --
- Package :
- Tube
- Package / Case :
- TO-247-3
- Pin Count :
- 3
- Transistor Element Material :
- SILICON
- Series :
- --
- Number of Terminals :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Product Category :
- MOSFET
- Minimum Operating Temperature :
- - 55 C
- JESD-30 Code :
- R-PSFM-T3
- Transistor Application :
- SWITCHING
- Polarity/Channel Type :
- N-Channel
- Brand :
- IXYS
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Channel Mode :
- Depletion
- Vgs (Max) :
- ±20V
- Operating Temperature :
- -55°C~150°C TJ
- Case Connection :
- DRAIN
- DS Breakdown Voltage-Min :
- 1000V
- Package Shape :
- RECTANGULAR
- Drain to Source Voltage (Vdss) :
- 1000V
- Drain-source On Resistance-Max :
- 1.5 Ω
- Terminal Position :
- Single
- Supplier Device Package :
- TO-247
- Manufacturer :
- IXYS
- Power Dissipation (Max) :
- 695W (Tc)
- Number of Elements :
- 1
- Published :
- 2011
- Power Dissipation-Max (Abs) :
- 695 W
- Number of Channels :
- 1 Channel
- RoHS :
- Details
- Rise Time :
- 36 ns
- Terminal Form :
- THROUGH-HOLE
- Maximum Operating Temperature :
- + 150 C
- Base Product Number :
- IXTH10
- Mounting Type :
- Through Hole
- Factory Lead Time :
- 24 Weeks
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Surface Mount :
- No
- Packaging :
- Tube
- Datasheets
- IXTH10N100D2
IXTH10N100D2 Documents
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N-Channel Tube 1.5 Ω @ 5A, 10V ±20V 5320pF @ 25V 200nC @ 5V 1000V TO-247-3
IXTH10N100D2 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 5320pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 10A continuous drain current (ID).Normal operation requires that the DS breakdown voltage remain above 1000V.For this transistor to work, a voltage 1000V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXTH10N100D2 Features
a continuous drain current (ID) of 10A
a 1000V drain to source voltage (Vdss)
IXTH10N100D2 Applications
There are a lot of IXYS
IXTH10N100D2 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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