IXTH10P50P
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- Mfr.Part #
- IXTH10P50P
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET P-CH 500V 10A TO247
- Stock
- 45
- In Stock ：
- 45
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation :
- 300W
- Number of Terminations :
- 3
- Maximum Operating Temperature :
- + 150 C
- Mounting Style :
- Through Hole
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Supplier Device Package :
- TO-247 (IXTH)
- Drain to Source Breakdown Voltage :
- -500V
- RoHS :
- Details
- Configuration :
- Single
- Mounting Type :
- Through Hole
- Brand :
- IXYS
- Channel Mode :
- Enhancement
- Transistor Polarity :
- P-Channel
- Series :
- PolarP™
- Gate to Source Voltage (Vgs) :
- 20V
- JESD-30 Code :
- R-PSFM-T3
- Base Product Number :
- IXTH10
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rds On (Max) @ Id, Vgs :
- 1 Ω @ 5A, 10V
- Turn-Off Delay Time :
- 52 ns
- FET Feature :
- --
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- Product Category :
- MOSFET
- Qualification Status :
- Not Qualified
- Fall Time (Typ) :
- 44 ns
- Type :
- PolarP Power MOSFET
- Continuous Drain Current (ID) :
- 10A
- Vgs (Max) :
- ±20V
- Package / Case :
- TO-247-3
- Transistor Application :
- SWITCHING
- Operating Temperature :
- -55°C~150°C TJ
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Minimum Operating Temperature :
- - 55 C
- Mount :
- Through Hole
- Packaging :
- Tube
- Reach Compliance Code :
- Unknown
- Current - Continuous Drain (Id) @ 25°C :
- 10A Tc
- Package :
- Tube
- Additional Feature :
- AVALANCHE RATED
- Drain to Source Voltage (Vdss) :
- 500V
- Transistor Element Material :
- SILICON
- Gate Charge (Qg) (Max) @ Vgs :
- 50nC @ 10V
- Lead Free :
- Lead Free
- Number of Elements :
- 1
- Published :
- 2004
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Product Type :
- MOSFET
- RoHS Status :
- ROHS3 Compliant
- FET Type :
- P-Channel
- Operating Mode :
- ENHANCEMENT MODE
- Product Status :
- Active
- Rise Time :
- 28ns
- Length :
- 16.24 mm
- Width :
- 5.3 mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Resistance :
- 750mOhm
- Power Dissipation (Max) :
- 300W (Tc)
- JESD-609 Code :
- e1
- Height :
- 21.45 mm
- Element Configuration :
- Single
- Case Connection :
- DRAIN
- Manufacturer :
- IXYS
- Number of Channels :
- 1 Channel
- Factory Lead Time :
- 28 Weeks
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Input Capacitance (Ciss) (Max) @ Vds :
- 2840pF @ 25V
- Pbfree Code :
- yes
- Transistor Type :
- 1 P-Channel
- Power Dissipation-Max :
- 300W Tc
- Pin Count :
- 3
- Pulsed Drain Current-Max (IDM) :
- 30A
- Datasheets
- IXTH10P50P
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P-Channel Tube 1 Ω @ 5A, 10V ±20V 2840pF @ 25V 50nC @ 10V 500V TO-247-3
IXTH10P50P Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 1500 mJ.A device's maximal input capacitance is 2840pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 10A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is -500V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 52 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 30A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor requires a 500V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXTH10P50P Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of -500V voltage
the turn-off delay time is 52 ns
based on its rated peak drain current 30A.
a 500V drain to source voltage (Vdss)
IXTH10P50P Applications
There are a lot of IXYS
IXTH10P50P applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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