IXTH10P50P
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- Mfr.Part #
- IXTH10P50P
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET P-CH 500V 10A TO247
- Stock
- 45
- In Stock ：
- 45
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JESD-609 Code :
- e1
- Channel Mode :
- Enhancement
- Packaging :
- Tube
- Manufacturer :
- IXYS
- Number of Terminations :
- 3
- RoHS :
- Details
- Transistor Application :
- SWITCHING
- Fall Time (Typ) :
- 44 ns
- Vgs (Max) :
- ±20V
- Number of Elements :
- 1
- Element Configuration :
- Single
- Power Dissipation (Max) :
- 300W (Tc)
- FET Type :
- P-Channel
- Pin Count :
- 3
- Product Status :
- Active
- Pulsed Drain Current-Max (IDM) :
- 30A
- Transistor Type :
- 1 P-Channel
- Transistor Polarity :
- P-Channel
- JESD-30 Code :
- R-PSFM-T3
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Published :
- 2004
- Mounting Style :
- Through Hole
- Supplier Device Package :
- TO-247 (IXTH)
- Number of Channels :
- 1 Channel
- Continuous Drain Current (ID) :
- 10A
- Mount :
- Through Hole
- Pbfree Code :
- yes
- Product Category :
- MOSFET
- Lead Free :
- Lead Free
- Avalanche Energy Rating (Eas) :
- 1500 mJ
- Width :
- 5.3 mm
- Drain to Source Breakdown Voltage :
- -500V
- Package :
- Tube
- Reach Compliance Code :
- Unknown
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Operating Mode :
- ENHANCEMENT MODE
- Additional Feature :
- AVALANCHE RATED
- Length :
- 16.24 mm
- Case Connection :
- DRAIN
- Power Dissipation :
- 300W
- FET Feature :
- --
- Brand :
- IXYS
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Current - Continuous Drain (Id) @ 25°C :
- 10A Tc
- Qualification Status :
- Not Qualified
- Operating Temperature :
- -55°C~150°C TJ
- Drain to Source Voltage (Vdss) :
- 500V
- Power Dissipation-Max :
- 300W Tc
- Configuration :
- Single
- Rise Time :
- 28ns
- Minimum Operating Temperature :
- - 55 C
- Type :
- PolarP Power MOSFET
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Input Capacitance (Ciss) (Max) @ Vds :
- 2840pF @ 25V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Rds On (Max) @ Id, Vgs :
- 1 Ω @ 5A, 10V
- Factory Lead Time :
- 28 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Maximum Operating Temperature :
- + 150 C
- Mounting Type :
- Through Hole
- Height :
- 21.45 mm
- Gate to Source Voltage (Vgs) :
- 20V
- Transistor Element Material :
- SILICON
- Product Type :
- MOSFET
- Package / Case :
- TO-247-3
- Series :
- PolarP™
- RoHS Status :
- ROHS3 Compliant
- Resistance :
- 750mOhm
- Gate Charge (Qg) (Max) @ Vgs :
- 50nC @ 10V
- Base Product Number :
- IXTH10
- Turn-Off Delay Time :
- 52 ns
- Datasheets
- IXTH10P50P
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P-Channel Tube 1 Ω @ 5A, 10V ±20V 2840pF @ 25V 50nC @ 10V 500V TO-247-3
IXTH10P50P Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 1500 mJ.A device's maximal input capacitance is 2840pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 10A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is -500V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 52 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 30A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor requires a 500V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXTH10P50P Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of -500V voltage
the turn-off delay time is 52 ns
based on its rated peak drain current 30A.
a 500V drain to source voltage (Vdss)
IXTH10P50P Applications
There are a lot of IXYS
IXTH10P50P applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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