IXTH10P50P

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Mfr.Part #
IXTH10P50P
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET P-CH 500V 10A TO247
Stock
45
In Stock :
45

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Mount :
Through Hole
Drain to Source Breakdown Voltage :
-500V
Minimum Operating Temperature :
- 55 C
Power Dissipation :
300W
Power Dissipation (Max) :
300W (Tc)
Drain to Source Voltage (Vdss) :
500V
Packaging :
Tube
RoHS Status :
ROHS3 Compliant
Number of Elements :
1
Maximum Operating Temperature :
+ 150 C
Pbfree Code :
yes
Brand :
IXYS
Type :
PolarP Power MOSFET
Published :
2004
JESD-609 Code :
e1
Package / Case :
TO-247-3
Qualification Status :
Not Qualified
FET Type :
P-Channel
Series :
PolarP™
Pin Count :
3
Operating Mode :
ENHANCEMENT MODE
Mounting Style :
Through Hole
Fall Time (Typ) :
44 ns
Product Category :
MOSFET
Element Configuration :
Single
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Gate Charge (Qg) (Max) @ Vgs :
50nC @ 10V
Configuration :
Single
Vgs(th) (Max) @ Id :
4V @ 250µA
Resistance :
750mOhm
Factory Lead Time :
28 Weeks
Case Connection :
DRAIN
Supplier Device Package :
TO-247 (IXTH)
Rise Time :
28ns
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Terminations :
3
Pulsed Drain Current-Max (IDM) :
30A
Operating Temperature :
-55°C~150°C TJ
Manufacturer :
IXYS
Transistor Application :
SWITCHING
Additional Feature :
AVALANCHE RATED
Package :
Tube
Drive Voltage (Max Rds On,Min Rds On) :
10V
Mounting Type :
Through Hole
Height :
21.45 mm
Base Product Number :
IXTH10
Reach Compliance Code :
Unknown
Continuous Drain Current (ID) :
10A
Number of Channels :
1 Channel
Lead Free :
Lead Free
Product Status :
Active
Length :
16.24 mm
Transistor Type :
1 P-Channel
Width :
5.3 mm
Current - Continuous Drain (Id) @ 25°C :
10A Tc
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Transistor Element Material :
SILICON
Turn-Off Delay Time :
52 ns
Product Type :
MOSFET
Avalanche Energy Rating (Eas) :
1500 mJ
Vgs (Max) :
±20V
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
JESD-30 Code :
R-PSFM-T3
Channel Mode :
Enhancement
FET Feature :
--
RoHS :
Details
Input Capacitance (Ciss) (Max) @ Vds :
2840pF @ 25V
Power Dissipation-Max :
300W Tc
Transistor Polarity :
P-Channel
Rds On (Max) @ Id, Vgs :
1 Ω @ 5A, 10V
Gate to Source Voltage (Vgs) :
20V
Datasheets
IXTH10P50P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTH10P50P from Chip IC,where excellence meets affordability. This product stands out with its Type:PolarP Power MOSFET, Package / Case:TO-247-3, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Number of Channels:1 Channel, IXTH10P50P pinout, IXTH10P50P datasheet PDF, IXTH10P50P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTH10P50P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTH10P50P


P-Channel Tube 1 Ω @ 5A, 10V ±20V 2840pF @ 25V 50nC @ 10V 500V TO-247-3

IXTH10P50P Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 1500 mJ.A device's maximal input capacitance is 2840pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 10A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is -500V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 52 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 30A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor requires a 500V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IXTH10P50P Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of -500V voltage
the turn-off delay time is 52 ns
based on its rated peak drain current 30A.
a 500V drain to source voltage (Vdss)


IXTH10P50P Applications


There are a lot of IXYS
IXTH10P50P applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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