IXTH10N100D

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

1.4 Ω @ 10A, 10V

Power Dissipation-Max (Abs) :

400 W

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

3.5V @ 250µA

Number of Terminals :

3

JESD-609 Code :

e1

Mounting Type :

Through Hole

Reach Compliance Code :

Compliant

Pin Count :

3

Operating Temperature :

-55°C~150°C TJ

Package :

Tube

Turn-Off Delay Time :

110 ns

Pbfree Code :

yes

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Gate Charge (Qg) (Max) @ Vgs :

130nC @ 10V

Drain-source On Resistance-Max :

1.4 Ω

Rise Time :

85ns

Power Dissipation :

400W

Vgs (Max) :

±30V

Qualification Status :

Not Qualified

Packaging :

Tube

Transistor Polarity :

N-Channel

Continuous Drain Current (ID) :

10A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminations :

3

Package Shape :

RECTANGULAR

Operating Mode :

ENHANCEMENT MODE

Published :

2009

Manufacturer :

IXYS Corporation

JEDEC-95 Code :

TO-247

Case Connection :

DRAIN

Mount :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Gate to Source Voltage (Vgs) :

30V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Minimum Operating Temperature :

- 55 C

Channel Mode :

Enhancement

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-247-3

Polarity/Channel Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

2500pF @ 25V

JESD-30 Code :

R-PSFM-T3

Drain Current-Max (Abs) (ID) :

10 A

Power Dissipation-Max :

400W Tc

Element Configuration :

Single

Drain to Source Breakdown Voltage :

1kV

Mounting Style :

Through Hole

DS Breakdown Voltage-Min :

1000 V

Supplier Device Package :

TO-247 (IXTH)

FET Type :

N-Channel

Base Product Number :

IXTH10

Configuration :

SINGLE WITH BUILT-IN DIODE

Product Status :

Active

Terminal Form :

THROUGH-HOLE

Series :

--

Drain to Source Voltage (Vdss) :

1000V

Power Dissipation (Max) :

400W (Tc)

RoHS Status :

ROHS3 Compliant

Terminal Position :

Single

Surface Mount :

No

Transistor Application :

SWITCHING

Number of Elements :

1

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Transistor Element Material :

SILICON

Number of Channels :

1 Channel

FET Feature :

Depletion Mode

Pulsed Drain Current-Max (IDM) :

20A

Maximum Operating Temperature :

+ 150 C

Fall Time (Typ) :

75 ns