IXTH10N100D

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

3.5V @ 250µA

Base Product Number :

IXTH10

Mount :

Through Hole

Pbfree Code :

yes

Maximum Operating Temperature :

+ 150 C

Gate to Source Voltage (Vgs) :

30V

Channel Mode :

Enhancement

Element Configuration :

Single

Continuous Drain Current (ID) :

10A

Terminal Position :

Single

JESD-30 Code :

R-PSFM-T3

JEDEC-95 Code :

TO-247

Reach Compliance Code :

Compliant

Drain Current-Max (Abs) (ID) :

10 A

Rise Time :

85ns

Supplier Device Package :

TO-247 (IXTH)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Technology :

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code :

e1

FET Feature :

Depletion Mode

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Qualification Status :

Not Qualified

DS Breakdown Voltage-Min :

1000 V

Fall Time (Typ) :

75 ns

Transistor Polarity :

N-Channel

Packaging :

Tube

Case Connection :

DRAIN

Mounting Type :

Through Hole

Vgs (Max) :

±30V

Terminal Form :

THROUGH-HOLE

Package :

Tube

Power Dissipation-Max :

400W Tc

Manufacturer :

IXYS Corporation

Input Capacitance (Ciss) (Max) @ Vds :

2500pF @ 25V

Published :

2009

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Drain to Source Breakdown Voltage :

1kV

Series :

--

Number of Terminations :

3

Product Status :

Active

Drain to Source Voltage (Vdss) :

1000V

Surface Mount :

No

Power Dissipation :

400W

Drain-source On Resistance-Max :

1.4 Ω

Rds On (Max) @ Id, Vgs :

1.4 Ω @ 10A, 10V

Polarity/Channel Type :

N-Channel

Package Shape :

RECTANGULAR

Number of Terminals :

3

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

130nC @ 10V

RoHS Status :

ROHS3 Compliant

Mounting Style :

Through Hole

Minimum Operating Temperature :

- 55 C

FET Type :

N-Channel

Power Dissipation (Max) :

400W (Tc)

Number of Channels :

1 Channel

Pin Count :

3

Transistor Element Material :

SILICON

Package / Case :

TO-247-3

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Temperature :

-55°C~150°C TJ

Pulsed Drain Current-Max (IDM) :

20A

Power Dissipation-Max (Abs) :

400 W

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

110 ns