IXTH02N250

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Through Hole

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pbfree Code :

yes

Continuous Drain Current (ID) :

200mA

Rds On (Max) @ Id, Vgs :

450 Ω @ 50mA, 10V

Power Dissipation-Max (Abs) :

57 W

Mount :

Through Hole

Qualification Status :

Not Qualified

Factory Lead Time :

28 Weeks

Brand :

IXYS

Maximum Operating Temperature :

+ 150 C

Operating Temperature :

-55°C~150°C TJ

Drain to Source Voltage (Vdss) :

2500V

Transistor Polarity :

N-Channel

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Package / Case :

TO-247-3

Manufacturer :

IXYS

Rise Time :

19 ns

Power Dissipation-Max :

83W Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Pin Count :

3

Transistor Element Material :

SILICON

JEDEC-95 Code :

TO-247

Number of Terminals :

3

Terminal Position :

Single

Power Dissipation (Max) :

83W (Tc)

Height :

21.46 mm

JESD-609 Code :

e1

Number of Elements :

1

Polarity/Channel Type :

N-Channel

JESD-30 Code :

R-PSFM-T3

Number of Channels :

1 Channel

Operating Mode :

ENHANCEMENT MODE

FET Feature :

--

Published :

2012

Supplier Device Package :

TO-247 (IXTH)

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Series :

--

Packaging :

Tube

DS Breakdown Voltage-Min :

2500V

Pulsed Drain Current-Max (IDM) :

0.5A

Case Connection :

DRAIN

Product Category :

MOSFET

Reach Compliance Code :

Compliant

Transistor Type :

1 N-Channel

Minimum Operating Temperature :

- 55 C

Terminal Form :

THROUGH-HOLE

Width :

5.3 mm

Mounting Style :

Through Hole

Type :

High Voltage Power MOSFET

Input Capacitance (Ciss) (Max) @ Vds :

116pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Lead Free :

Lead Free

Drain-source On Resistance-Max :

450 Ω

Product Type :

MOSFET

Surface Mount :

No

RoHS Status :

ROHS3 Compliant

Product Status :

Active

Current - Continuous Drain (Id) @ 25°C :

200mA Tc

Number of Terminations :

3

Gate Charge (Qg) (Max) @ Vgs :

7.4nC @ 10V

FET Type :

N-Channel

Vgs (Max) :

±20V

Channel Mode :

Enhancement

Base Product Number :

IXTH02

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS :

Details

Drain Current-Max (Abs) (ID) :

0.2A

Length :

16.26 mm

Package :

Tube

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Package Shape :

RECTANGULAR