IXTH02N250

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Transistor Element Material :

SILICON

Type :

High Voltage Power MOSFET

Number of Terminations :

3

Reach Compliance Code :

Compliant

Number of Terminals :

3

Current - Continuous Drain (Id) @ 25°C :

200mA Tc

Pin Count :

3

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max (Abs) :

57 W

Polarity/Channel Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Mount :

Through Hole

Factory Lead Time :

28 Weeks

Manufacturer :

IXYS

Gate Charge (Qg) (Max) @ Vgs :

7.4nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Surface Mount :

No

Mounting Style :

Through Hole

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS :

Details

Transistor Polarity :

N-Channel

Package :

Tube

Drain Current-Max (Abs) (ID) :

0.2A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

--

Number of Elements :

1

Package Shape :

RECTANGULAR

Power Dissipation-Max :

83W Tc

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

450 Ω @ 50mA, 10V

Drain-source On Resistance-Max :

450 Ω

Transistor Type :

1 N-Channel

Rise Time :

19 ns

Lead Free :

Lead Free

Vgs (Max) :

±20V

Case Connection :

DRAIN

DS Breakdown Voltage-Min :

2500V

FET Type :

N-Channel

Drain to Source Voltage (Vdss) :

2500V

Package / Case :

TO-247-3

JESD-30 Code :

R-PSFM-T3

Base Product Number :

IXTH02

Supplier Device Package :

TO-247 (IXTH)

Qualification Status :

Not Qualified

Terminal Form :

THROUGH-HOLE

Input Capacitance (Ciss) (Max) @ Vds :

116pF @ 25V

Brand :

IXYS

Pbfree Code :

yes

Continuous Drain Current (ID) :

200mA

Product Status :

Active

Height :

21.46 mm

JEDEC-95 Code :

TO-247

Pulsed Drain Current-Max (IDM) :

0.5A

Channel Mode :

Enhancement

Minimum Operating Temperature :

- 55 C

Product Type :

MOSFET

Published :

2012

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Feature :

--

JESD-609 Code :

e1

Product Category :

MOSFET

Packaging :

Tube

Number of Channels :

1 Channel

Width :

5.3 mm

Length :

16.26 mm

Mounting Type :

Through Hole

RoHS Status :

ROHS3 Compliant

Maximum Operating Temperature :

+ 150 C

Terminal Position :

Single

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Power Dissipation (Max) :

83W (Tc)