IXTH102N20T
- Mfr.Part #
- IXTH102N20T
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 102A TO247
- Stock
- 36,621
- In Stock :
- 36,621
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation (Max) :
- 750W (Tc)
- Length :
- 16.26 mm
- Transistor Element Material :
- SILICON
- Base Product Number :
- IXTH102
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Series :
- TrenchHV™
- Surface Mount :
- No
- Terminal Position :
- Single
- Turn-Off Delay Time :
- 50 ns
- Operating Temperature :
- -55°C~175°C TJ
- Transistor Type :
- 1 N-Channel
- Number of Pins :
- 3
- RoHS :
- Details
- Product Category :
- MOSFET
- Continuous Drain Current (ID) :
- 102A
- Mount :
- Through Hole
- Manufacturer :
- IXYS
- Reach Compliance Code :
- Compliant
- JEDEC-95 Code :
- TO-247
- Polarity/Channel Type :
- N-Channel
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- Through Hole
- Number of Terminals :
- 3
- Width :
- 5.3 mm
- Case Connection :
- DRAIN
- Product Status :
- Active
- Number of Terminations :
- 3
- Power Dissipation :
- 750W
- Terminal Form :
- THROUGH-HOLE
- Configuration :
- Single
- Power Dissipation-Max :
- 750W Tc
- Gate to Source Voltage (Vgs) :
- 30V
- Product Type :
- MOSFET
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Drain Current-Max (Abs) (ID) :
- 102 A
- Power Dissipation-Max (Abs) :
- 750 W
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Package Shape :
- RECTANGULAR
- Drain to Source Breakdown Voltage :
- 200V
- RoHS Status :
- ROHS3 Compliant
- FET Type :
- N-Channel
- Vgs (Max) :
- ±30V
- Height :
- 21.46 mm
- Gate Charge (Qg) (Max) @ Vgs :
- 114nC @ 10V
- Pulsed Drain Current-Max (IDM) :
- 250A
- Transistor Polarity :
- N-Channel
- Pin Count :
- 3
- Rds On (Max) @ Id, Vgs :
- 23m Ω @ 500mA, 10V
- Maximum Operating Temperature :
- + 175 C
- ECCN Code :
- EAR99
- Supplier Device Package :
- TO-247 (IXTH)
- Number of Channels :
- 1 Channel
- Channel Mode :
- Enhancement
- Input Capacitance (Ciss) (Max) @ Vds :
- 6800pF @ 25V
- Drain-source On Resistance-Max :
- 0.023 Ω
- Mounting Type :
- Through Hole
- FET Feature :
- --
- Packaging :
- Tube
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Operating Mode :
- ENHANCEMENT MODE
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Current - Continuous Drain (Id) @ 25°C :
- 102A Tc
- Fall Time (Typ) :
- 25 ns
- Pbfree Code :
- yes
- DS Breakdown Voltage-Min :
- 200 V
- Element Configuration :
- Single
- JESD-609 Code :
- e1
- Additional Feature :
- AVALANCHE RATED
- Vgs(th) (Max) @ Id :
- 4.5V @ 1mA
- Package / Case :
- TO-247-3
- Published :
- 2013
- Avalanche Energy Rating (Eas) :
- 1200 mJ
- Package :
- Tube
- Drain to Source Voltage (Vdss) :
- 200V
- Rise Time :
- 26ns
- Brand :
- IXYS
- Qualification Status :
- Not Qualified
- JESD-30 Code :
- R-PSFM-T3
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Datasheets
- IXTH102N20T
IXTH102N20T Documents
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N-Channel Tube 23m Ω @ 500mA, 10V ±30V 6800pF @ 25V 114nC @ 10V 200V TO-247-3
IXTH102N20T Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 1200 mJ.A device's maximal input capacitance is 6800pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 102A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 200V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 102 A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 50 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 250A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 200 V.This transistor requires a 200V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXTH102N20T Features
the avalanche energy rating (Eas) is 1200 mJ
a continuous drain current (ID) of 102A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 50 ns
based on its rated peak drain current 250A.
a 200V drain to source voltage (Vdss)
IXTH102N20T Applications
There are a lot of IXYS
IXTH102N20T applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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