IXTH102N20T

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Mfr.Part #
IXTH102N20T
Manufacturer
Littelfuse
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 200V 102A TO247
Stock
36,621
In Stock :
36,621

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Transistor Type :
1 N-Channel
RoHS Status :
ROHS3 Compliant
Power Dissipation :
750W
JEDEC-95 Code :
TO-247
Length :
16.26 mm
Package :
Tube
Operating Temperature :
-55°C~175°C TJ
DS Breakdown Voltage-Min :
200 V
Number of Channels :
1 Channel
JESD-30 Code :
R-PSFM-T3
Height :
21.46 mm
Product Category :
MOSFET
Supplier Device Package :
TO-247 (IXTH)
Width :
5.3 mm
Current - Continuous Drain (Id) @ 25°C :
102A Tc
Gate to Source Voltage (Vgs) :
30V
Drain to Source Voltage (Vdss) :
200V
Pbfree Code :
yes
Drain-source On Resistance-Max :
0.023 Ω
Configuration :
Single
Power Dissipation (Max) :
750W (Tc)
Number of Terminals :
3
FET Feature :
--
Transistor Polarity :
N-Channel
Number of Elements :
1
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Base Product Number :
IXTH102
Mounting Style :
Through Hole
Gate Charge (Qg) (Max) @ Vgs :
114nC @ 10V
Power Dissipation-Max (Abs) :
750 W
Transistor Application :
SWITCHING
Terminal Position :
Single
Minimum Operating Temperature :
- 55 C
ECCN Code :
EAR99
Drain Current-Max (Abs) (ID) :
102 A
Operating Mode :
ENHANCEMENT MODE
Number of Terminations :
3
Turn-Off Delay Time :
50 ns
Surface Mount :
No
Vgs (Max) :
±30V
Transistor Element Material :
SILICON
Polarity/Channel Type :
N-Channel
Number of Pins :
3
Avalanche Energy Rating (Eas) :
1200 mJ
Rds On (Max) @ Id, Vgs :
23m Ω @ 500mA, 10V
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Case Connection :
DRAIN
Pin Count :
3
Rise Time :
26ns
Element Configuration :
Single
JESD-609 Code :
e1
Packaging :
Tube
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Brand :
IXYS
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Channel Mode :
Enhancement
Product Status :
Active
Drain to Source Breakdown Voltage :
200V
Pulsed Drain Current-Max (IDM) :
250A
Series :
TrenchHV™
Product Type :
MOSFET
Continuous Drain Current (ID) :
102A
Package Shape :
RECTANGULAR
Drive Voltage (Max Rds On,Min Rds On) :
10V
Published :
2013
Additional Feature :
AVALANCHE RATED
Package / Case :
TO-247-3
Input Capacitance (Ciss) (Max) @ Vds :
6800pF @ 25V
Power Dissipation-Max :
750W Tc
Vgs(th) (Max) @ Id :
4.5V @ 1mA
FET Type :
N-Channel
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mounting Type :
Through Hole
Fall Time (Typ) :
25 ns
Terminal Form :
THROUGH-HOLE
Reach Compliance Code :
Compliant
Manufacturer :
IXYS
Qualification Status :
Not Qualified
RoHS :
Details
Maximum Operating Temperature :
+ 175 C
Mount :
Through Hole
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTH102N20T from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~175°C TJ, Number of Channels:1 Channel, Number of Terminations:3, Number of Pins:3, Package / Case:TO-247-3, Mounting Type:Through Hole, IXTH102N20T pinout, IXTH102N20T datasheet PDF, IXTH102N20T amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTH102N20T ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTH102N20T


N-Channel Tube 23m Ω @ 500mA, 10V ±30V 6800pF @ 25V 114nC @ 10V 200V TO-247-3

IXTH102N20T Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 1200 mJ.A device's maximal input capacitance is 6800pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 102A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 200V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 102 A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 50 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 250A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 200 V.This transistor requires a 200V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IXTH102N20T Features


the avalanche energy rating (Eas) is 1200 mJ
a continuous drain current (ID) of 102A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 50 ns
based on its rated peak drain current 250A.
a 200V drain to source voltage (Vdss)


IXTH102N20T Applications


There are a lot of IXYS
IXTH102N20T applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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