IXTH102N20T
- Mfr.Part #
- IXTH102N20T
- Manufacturer
- Littelfuse
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 102A TO247
- Stock
- 36,621
- In Stock :
- 36,621
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain Current-Max (Abs) (ID) :
- 102 A
- Fall Time (Typ) :
- 25 ns
- Manufacturer :
- IXYS
- Element Configuration :
- Single
- JEDEC-95 Code :
- TO-247
- Drain-source On Resistance-Max :
- 0.023 Ω
- Drain to Source Voltage (Vdss) :
- 200V
- Mount :
- Through Hole
- Vgs (Max) :
- ±30V
- Transistor Element Material :
- SILICON
- RoHS :
- Details
- Mounting Style :
- Through Hole
- Pulsed Drain Current-Max (IDM) :
- 250A
- Brand :
- IXYS
- Length :
- 16.26 mm
- Number of Pins :
- 3
- Vgs(th) (Max) @ Id :
- 4.5V @ 1mA
- ECCN Code :
- EAR99
- Surface Mount :
- No
- Number of Elements :
- 1
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Power Dissipation-Max (Abs) :
- 750 W
- Gate Charge (Qg) (Max) @ Vgs :
- 114nC @ 10V
- Number of Terminals :
- 3
- Current - Continuous Drain (Id) @ 25°C :
- 102A Tc
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Product Status :
- Active
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Product Type :
- MOSFET
- Mounting Type :
- Through Hole
- Transistor Polarity :
- N-Channel
- Published :
- 2013
- Minimum Operating Temperature :
- - 55 C
- JESD-30 Code :
- R-PSFM-T3
- DS Breakdown Voltage-Min :
- 200 V
- Packaging :
- Tube
- JESD-609 Code :
- e1
- Gate to Source Voltage (Vgs) :
- 30V
- Continuous Drain Current (ID) :
- 102A
- Transistor Application :
- SWITCHING
- Turn-Off Delay Time :
- 50 ns
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation (Max) :
- 750W (Tc)
- Number of Terminations :
- 3
- Pin Count :
- 3
- Additional Feature :
- AVALANCHE RATED
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Package / Case :
- TO-247-3
- Power Dissipation-Max :
- 750W Tc
- Pbfree Code :
- yes
- FET Feature :
- --
- Terminal Form :
- THROUGH-HOLE
- Polarity/Channel Type :
- N-Channel
- Drain to Source Breakdown Voltage :
- 200V
- Series :
- TrenchHV™
- Reach Compliance Code :
- Compliant
- Base Product Number :
- IXTH102
- Terminal Position :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~175°C TJ
- Transistor Type :
- 1 N-Channel
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Number of Channels :
- 1 Channel
- Operating Mode :
- ENHANCEMENT MODE
- Avalanche Energy Rating (Eas) :
- 1200 mJ
- Product Category :
- MOSFET
- Configuration :
- Single
- Supplier Device Package :
- TO-247 (IXTH)
- Channel Mode :
- Enhancement
- Height :
- 21.46 mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 6800pF @ 25V
- Package :
- Tube
- Rise Time :
- 26ns
- Maximum Operating Temperature :
- + 175 C
- Power Dissipation :
- 750W
- Case Connection :
- DRAIN
- Rds On (Max) @ Id, Vgs :
- 23m Ω @ 500mA, 10V
- FET Type :
- N-Channel
- Package Shape :
- RECTANGULAR
- Qualification Status :
- Not Qualified
- Width :
- 5.3 mm
- Datasheets
- IXTH102N20T
IXTH102N20T Documents
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N-Channel Tube 23m Ω @ 500mA, 10V ±30V 6800pF @ 25V 114nC @ 10V 200V TO-247-3
IXTH102N20T Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 1200 mJ.A device's maximal input capacitance is 6800pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 102A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 200V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 102 A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 50 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 250A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 200 V.This transistor requires a 200V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXTH102N20T Features
the avalanche energy rating (Eas) is 1200 mJ
a continuous drain current (ID) of 102A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 50 ns
based on its rated peak drain current 250A.
a 200V drain to source voltage (Vdss)
IXTH102N20T Applications
There are a lot of IXYS
IXTH102N20T applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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