IXFA4N100Q

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

15ns

Resistance :

3Ohm

Power Dissipation :

150W

Transistor Application :

SWITCHING

Width :

9.65 mm

Brand :

IXYS

Avalanche Energy Rating (Eas) :

700 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Polarity :

N-Channel

Max Operating Temperature :

150 °C

Lead Free :

Lead Free

Reach Compliance Code :

not_compliant

Channel Mode :

Enhancement

Pin Count :

4

Transistor Element Material :

SILICON

FET Type :

N-Channel

Pbfree Code :

yes

JEDEC-95 Code :

TO-263AB

Power Dissipation-Max :

150W Tc

JESD-30 Code :

R-PSSO-G2

Drain to Source Voltage (Vdss) :

1000V

Radiation Hardening :

No

Surface Mount :

yes

Element Configuration :

Single

Rds On Max :

3 Ω

Mounting Style :

SMD/SMT

Additional Feature :

AVALANCHE RATED

Product Status :

Active

Terminal Finish :

Matte Tin (Sn)

Power Dissipation (Max) :

150W (Tc)

Terminal Form :

Gull wing

JESD-609 Code :

e3

Base Product Number :

IXFA4N100

Input Capacitance (Ciss) (Max) @ Vds :

1050pF @ 25V

Input Capacitance :

1.05 nF

Package Shape :

RECTANGULAR

Continuous Drain Current (ID) :

4A

Height :

4.83 mm

Package :

Tube

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Product Type :

MOSFET

Number of Terminations :

2

Qualification Status :

Not Qualified

Length :

10.41 mm

Vgs (Max) :

±20V

Manufacturer :

IXYS

Configuration :

Single

Published :

2011

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

4.5V @ 1.5mA

Drain to Source Resistance :

3 Ω

Turn-Off Delay Time :

32 ns

DS Breakdown Voltage-Min :

1000 V

Mount :

Surface Mount

Minimum Operating Temperature :

- 55 C

Gate Charge (Qg) (Max) @ Vgs :

39nC @ 10V

RoHS :

Compliant

Product Category :

MOSFET

Series :

HiPerFET™

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pulsed Drain Current-Max (IDM) :

16 A

RoHS Status :

ROHS3 Compliant

Maximum Operating Temperature :

+ 150 C

Min Operating Temperature :

-55 °C

Terminal Position :

Single

Drain-source On Resistance-Max :

3 Ω

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Polarity/Channel Type :

N-Channel

Max Power Dissipation :

150 W

Tradename :

HyperFET

Drain Current-Max (Abs) (ID) :

4A

Rds On (Max) @ Id, Vgs :

3 Ω @ 2A, 10V

Drain to Source Breakdown Voltage :

1kV

Number of Elements :

1

Packaging :

Tube

Factory Lead Time :

30 Weeks

Power Dissipation-Max (Abs) :

150 W

Case Connection :

DRAIN

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

4A Tc

Number of Channels :

1 Channel

Fall Time (Typ) :

18 ns

Supplier Device Package :

TO-263 (IXFA)

Operating Mode :

ENHANCEMENT MODE

Transistor Type :

1 N-Channel

FET Feature :

--

Number of Terminals :

2