IXFA10N80P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Polarity/Channel Type :

N-Channel

Drain to Source Breakdown Voltage :

800V

Pbfree Code :

yes

Gate to Source Voltage (Vgs) :

30V

Operating Mode :

ENHANCEMENT MODE

FET Feature :

--

Mounting Type :

Surface Mount

Pin Count :

3

RoHS :

Details

Product Status :

Active

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Style :

SMD/SMT

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Pulsed Drain Current-Max (IDM) :

30 A

Terminal Position :

Single

Qualification Status :

Not Qualified

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Element Configuration :

Single

Transistor Type :

1 N-Channel

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Reach Compliance Code :

not_compliant

Additional Feature :

AVALANCHE RATED

Power Dissipation (Max) :

300W (Tc)

Factory Lead Time :

30 Weeks

Number of Channels :

1 Channel

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

5.5V @ 2.5mA

Power Dissipation :

300W

Channel Mode :

Enhancement

Threshold Voltage :

5.5V

Base Product Number :

IXFA10

Input Capacitance (Ciss) (Max) @ Vds :

2050pF @ 25V

Series :

HiPerFET™, PolarHT™

Mount :

Surface Mount

Minimum Operating Temperature :

- 55 C

JESD-609 Code :

e3

Number of Pins :

3

Drain to Source Voltage (Vdss) :

800V

Manufacturer :

IXYS

Operating Temperature :

-55°C~150°C TJ

Rise Time :

22ns

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

Lead Free :

Lead Free

Terminal Form :

Gull wing

Fall Time (Typ) :

22 ns

Transistor Element Material :

SILICON

Number of Terminals :

3

Maximum Operating Temperature :

+ 150 C

Vgs (Max) :

±30V

FET Type :

N-Channel

Power Dissipation-Max (Abs) :

300 W

RoHS Status :

ROHS3 Compliant

Packaging :

Tube

Transistor Application :

SWITCHING

REACH SVHC :

No SVHC

Rds On (Max) @ Id, Vgs :

1.1 Ω @ 5A, 10V

DS Breakdown Voltage-Min :

800 V

Continuous Drain Current (ID) :

10A

Tradename :

HiPerFET

JEDEC-95 Code :

TO-263AA

Product Category :

MOSFET

Case Connection :

DRAIN

Power Dissipation-Max :

300W Tc

JESD-30 Code :

R-PSSO-G3

Drain-source On Resistance-Max :

1.1 Ω

Number of Terminations :

3

Avalanche Energy Rating (Eas) :

600 mJ

Configuration :

Single

Supplier Device Package :

TO-263 (IXFA)

ECCN Code :

EAR99

Brand :

IXYS

Surface Mount :

yes

Transistor Polarity :

N-Channel

Terminal Finish :

Matte Tin (Sn)

Number of Elements :

1

Product Type :

MOSFET

Turn-Off Delay Time :

62 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

10 A

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Package :

Tube

Published :

2006

Package Shape :

RECTANGULAR