IXFA10N80P

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Mfr.Part #
IXFA10N80P
Manufacturer
Littelfuse
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 800V 10A TO263
Stock
1
In Stock :
1

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Polarity/Channel Type :
N-Channel
Drain to Source Breakdown Voltage :
800V
Pbfree Code :
yes
Gate to Source Voltage (Vgs) :
30V
Operating Mode :
ENHANCEMENT MODE
FET Feature :
--
Mounting Type :
Surface Mount
Pin Count :
3
RoHS :
Details
Product Status :
Active
Drive Voltage (Max Rds On,Min Rds On) :
10V
Mounting Style :
SMD/SMT
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Pulsed Drain Current-Max (IDM) :
30 A
Terminal Position :
Single
Qualification Status :
Not Qualified
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Element Configuration :
Single
Transistor Type :
1 N-Channel
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Reach Compliance Code :
not_compliant
Additional Feature :
AVALANCHE RATED
Power Dissipation (Max) :
300W (Tc)
Factory Lead Time :
30 Weeks
Number of Channels :
1 Channel
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Vgs(th) (Max) @ Id :
5.5V @ 2.5mA
Power Dissipation :
300W
Channel Mode :
Enhancement
Threshold Voltage :
5.5V
Base Product Number :
IXFA10
Input Capacitance (Ciss) (Max) @ Vds :
2050pF @ 25V
Series :
HiPerFET™, PolarHT™
Mount :
Surface Mount
Minimum Operating Temperature :
- 55 C
JESD-609 Code :
e3
Number of Pins :
3
Drain to Source Voltage (Vdss) :
800V
Manufacturer :
IXYS
Operating Temperature :
-55°C~150°C TJ
Rise Time :
22ns
Gate Charge (Qg) (Max) @ Vgs :
40nC @ 10V
Lead Free :
Lead Free
Terminal Form :
Gull wing
Fall Time (Typ) :
22 ns
Transistor Element Material :
SILICON
Number of Terminals :
3
Maximum Operating Temperature :
+ 150 C
Vgs (Max) :
±30V
FET Type :
N-Channel
Power Dissipation-Max (Abs) :
300 W
RoHS Status :
ROHS3 Compliant
Packaging :
Tube
Transistor Application :
SWITCHING
REACH SVHC :
No SVHC
Rds On (Max) @ Id, Vgs :
1.1 Ω @ 5A, 10V
DS Breakdown Voltage-Min :
800 V
Continuous Drain Current (ID) :
10A
Tradename :
HiPerFET
JEDEC-95 Code :
TO-263AA
Product Category :
MOSFET
Case Connection :
DRAIN
Power Dissipation-Max :
300W Tc
JESD-30 Code :
R-PSSO-G3
Drain-source On Resistance-Max :
1.1 Ω
Number of Terminations :
3
Avalanche Energy Rating (Eas) :
600 mJ
Configuration :
Single
Supplier Device Package :
TO-263 (IXFA)
ECCN Code :
EAR99
Brand :
IXYS
Surface Mount :
yes
Transistor Polarity :
N-Channel
Terminal Finish :
Matte Tin (Sn)
Number of Elements :
1
Product Type :
MOSFET
Turn-Off Delay Time :
62 ns
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drain Current-Max (Abs) (ID) :
10 A
Current - Continuous Drain (Id) @ 25°C :
10A Tc
Package :
Tube
Published :
2006
Package Shape :
RECTANGULAR
Datasheets
IXFA10N80P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFA10N80P from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Number of Channels:1 Channel, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, IXFA10N80P pinout, IXFA10N80P datasheet PDF, IXFA10N80P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFA10N80P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFA10N80P


N-Channel Tube 1.1 Ω @ 5A, 10V ±30V 2050pF @ 25V 40nC @ 10V 800V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXFA10N80P Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 600 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 2050pF @ 25V.This device has a continuous drain current (ID) of [10A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=800V, the drain-source breakdown voltage is 800V.A device's drain current is its maximum continuous current, and this device's drain current is 10 A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 62 ns.A maximum pulsed drain current of 30 A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 5.5V.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 800 V.In order to operate this transistor, a voltage of 800V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXFA10N80P Features


the avalanche energy rating (Eas) is 600 mJ
a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 62 ns
based on its rated peak drain current 30 A.
a threshold voltage of 5.5V
a 800V drain to source voltage (Vdss)


IXFA10N80P Applications


There are a lot of IXYS
IXFA10N80P applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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