IXFA10N80P
- Mfr.Part #
- IXFA10N80P
- Manufacturer
- Littelfuse
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 10A TO263
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Temperature :
- -55°C~150°C TJ
- Number of Pins :
- 3
- Polarity/Channel Type :
- N-Channel
- Drain-source On Resistance-Max :
- 1.1 Ω
- REACH SVHC :
- No SVHC
- Product Type :
- MOSFET
- Number of Terminals :
- 3
- Factory Lead Time :
- 30 Weeks
- Mounting Style :
- SMD/SMT
- Continuous Drain Current (ID) :
- 10A
- Avalanche Energy Rating (Eas) :
- 600 mJ
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Rds On (Max) @ Id, Vgs :
- 1.1 Ω @ 5A, 10V
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Power Dissipation :
- 300W
- Reach Compliance Code :
- not_compliant
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- Drain Current-Max (Abs) (ID) :
- 10 A
- Pulsed Drain Current-Max (IDM) :
- 30 A
- Current - Continuous Drain (Id) @ 25°C :
- 10A Tc
- RoHS :
- Details
- Package :
- Tube
- Transistor Type :
- 1 N-Channel
- Gate to Source Voltage (Vgs) :
- 30V
- Published :
- 2006
- Drain to Source Breakdown Voltage :
- 800V
- Tradename :
- HiPerFET
- Product Status :
- Active
- Number of Terminations :
- 3
- Manufacturer :
- IXYS
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Channels :
- 1 Channel
- Configuration :
- Single
- Element Configuration :
- Single
- Channel Mode :
- Enhancement
- JEDEC-95 Code :
- TO-263AA
- Maximum Operating Temperature :
- + 150 C
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Qualification Status :
- Not Qualified
- FET Type :
- N-Channel
- Power Dissipation (Max) :
- 300W (Tc)
- Input Capacitance (Ciss) (Max) @ Vds :
- 2050pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs :
- 40nC @ 10V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Product Category :
- MOSFET
- Lead Free :
- Lead Free
- Series :
- HiPerFET™, PolarHT™
- Mount :
- Surface Mount
- Power Dissipation-Max :
- 300W Tc
- Vgs(th) (Max) @ Id :
- 5.5V @ 2.5mA
- Drain to Source Voltage (Vdss) :
- 800V
- Pin Count :
- 3
- Transistor Polarity :
- N-Channel
- Terminal Position :
- Single
- DS Breakdown Voltage-Min :
- 800 V
- Power Dissipation-Max (Abs) :
- 300 W
- JESD-30 Code :
- R-PSSO-G3
- Rise Time :
- 22ns
- Operating Mode :
- ENHANCEMENT MODE
- Supplier Device Package :
- TO-263 (IXFA)
- Package Shape :
- RECTANGULAR
- Minimum Operating Temperature :
- - 55 C
- Base Product Number :
- IXFA10
- Mounting Type :
- Surface Mount
- Surface Mount :
- yes
- Pbfree Code :
- yes
- Brand :
- IXYS
- Fall Time (Typ) :
- 22 ns
- Packaging :
- Tube
- Case Connection :
- DRAIN
- Additional Feature :
- AVALANCHE RATED
- FET Feature :
- --
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Terminal Finish :
- Matte Tin (Sn)
- Turn-Off Delay Time :
- 62 ns
- Threshold Voltage :
- 5.5V
- Terminal Form :
- Gull wing
- Vgs (Max) :
- ±30V
- Number of Elements :
- 1
- Datasheets
- IXFA10N80P

N-Channel Tube 1.1 Ω @ 5A, 10V ±30V 2050pF @ 25V 40nC @ 10V 800V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXFA10N80P Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 600 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 2050pF @ 25V.This device has a continuous drain current (ID) of [10A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=800V, the drain-source breakdown voltage is 800V.A device's drain current is its maximum continuous current, and this device's drain current is 10 A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 62 ns.A maximum pulsed drain current of 30 A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 5.5V.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 800 V.In order to operate this transistor, a voltage of 800V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IXFA10N80P Features
the avalanche energy rating (Eas) is 600 mJ
a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 62 ns
based on its rated peak drain current 30 A.
a threshold voltage of 5.5V
a 800V drain to source voltage (Vdss)
IXFA10N80P Applications
There are a lot of IXYS
IXFA10N80P applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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