IXFA10N80P

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Mfr.Part #
IXFA10N80P
Manufacturer
Littelfuse
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 800V 10A TO263
Stock
1
In Stock :
1

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Package :
Tube
Drive Voltage (Max Rds On,Min Rds On) :
10V
Number of Pins :
3
Maximum Operating Temperature :
+ 150 C
Number of Elements :
1
Surface Mount :
yes
Product Category :
MOSFET
Power Dissipation (Max) :
300W (Tc)
Transistor Polarity :
N-Channel
Transistor Type :
1 N-Channel
Drain to Source Voltage (Vdss) :
800V
Power Dissipation-Max (Abs) :
300 W
DS Breakdown Voltage-Min :
800 V
Pin Count :
3
Current - Continuous Drain (Id) @ 25°C :
10A Tc
Channel Mode :
Enhancement
Case Connection :
DRAIN
Pbfree Code :
yes
FET Technology :
METAL-OXIDE SEMICONDUCTOR
ECCN Code :
EAR99
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Reach Compliance Code :
not_compliant
Minimum Operating Temperature :
- 55 C
Terminal Form :
Gull wing
Configuration :
Single
RoHS Status :
ROHS3 Compliant
Polarity/Channel Type :
N-Channel
FET Type :
N-Channel
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
JEDEC-95 Code :
TO-263AA
Series :
HiPerFET™, PolarHT™
Transistor Element Material :
SILICON
JESD-30 Code :
R-PSSO-G3
Terminal Position :
Single
Operating Temperature :
-55°C~150°C TJ
Power Dissipation-Max :
300W Tc
Additional Feature :
AVALANCHE RATED
Brand :
IXYS
Input Capacitance (Ciss) (Max) @ Vds :
2050pF @ 25V
Element Configuration :
Single
Product Type :
MOSFET
Continuous Drain Current (ID) :
10A
Rise Time :
22ns
Published :
2006
Terminal Finish :
Matte Tin (Sn)
Supplier Device Package :
TO-263 (IXFA)
Gate Charge (Qg) (Max) @ Vgs :
40nC @ 10V
Gate to Source Voltage (Vgs) :
30V
Turn-Off Delay Time :
62 ns
Threshold Voltage :
5.5V
RoHS :
Details
Fall Time (Typ) :
22 ns
Manufacturer :
IXYS
Vgs(th) (Max) @ Id :
5.5V @ 2.5mA
Vgs (Max) :
±30V
Lead Free :
Lead Free
Factory Lead Time :
30 Weeks
Product Status :
Active
Transistor Application :
SWITCHING
JESD-609 Code :
e3
Avalanche Energy Rating (Eas) :
600 mJ
Rds On (Max) @ Id, Vgs :
1.1 Ω @ 5A, 10V
Power Dissipation :
300W
Base Product Number :
IXFA10
Mounting Type :
Surface Mount
Packaging :
Tube
Drain Current-Max (Abs) (ID) :
10 A
Number of Terminations :
3
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Tradename :
HiPerFET
Operating Mode :
ENHANCEMENT MODE
Drain to Source Breakdown Voltage :
800V
FET Feature :
--
REACH SVHC :
No SVHC
Qualification Status :
Not Qualified
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drain-source On Resistance-Max :
1.1 Ω
Mount :
Surface Mount
Package Shape :
RECTANGULAR
Number of Channels :
1 Channel
Number of Terminals :
3
Mounting Style :
SMD/SMT
Pulsed Drain Current-Max (IDM) :
30 A
Datasheets
IXFA10N80P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFA10N80P from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Number of Terminations:3, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Number of Channels:1 Channel, IXFA10N80P pinout, IXFA10N80P datasheet PDF, IXFA10N80P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFA10N80P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFA10N80P


N-Channel Tube 1.1 Ω @ 5A, 10V ±30V 2050pF @ 25V 40nC @ 10V 800V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXFA10N80P Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 600 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 2050pF @ 25V.This device has a continuous drain current (ID) of [10A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=800V, the drain-source breakdown voltage is 800V.A device's drain current is its maximum continuous current, and this device's drain current is 10 A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 62 ns.A maximum pulsed drain current of 30 A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 5.5V.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 800 V.In order to operate this transistor, a voltage of 800V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXFA10N80P Features


the avalanche energy rating (Eas) is 600 mJ
a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 62 ns
based on its rated peak drain current 30 A.
a threshold voltage of 5.5V
a 800V drain to source voltage (Vdss)


IXFA10N80P Applications


There are a lot of IXYS
IXFA10N80P applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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