IXFA10N80P

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Mfr.Part #
IXFA10N80P
Manufacturer
Littelfuse
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 800V 10A TO263
Stock
1
In Stock :
1

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Operating Temperature :
-55°C~150°C TJ
Number of Pins :
3
Polarity/Channel Type :
N-Channel
Drain-source On Resistance-Max :
1.1 Ω
REACH SVHC :
No SVHC
Product Type :
MOSFET
Number of Terminals :
3
Factory Lead Time :
30 Weeks
Mounting Style :
SMD/SMT
Continuous Drain Current (ID) :
10A
Avalanche Energy Rating (Eas) :
600 mJ
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Rds On (Max) @ Id, Vgs :
1.1 Ω @ 5A, 10V
ECCN Code :
EAR99
RoHS Status :
ROHS3 Compliant
JESD-609 Code :
e3
Drive Voltage (Max Rds On,Min Rds On) :
10V
Power Dissipation :
300W
Reach Compliance Code :
not_compliant
Transistor Element Material :
SILICON
Transistor Application :
SWITCHING
Drain Current-Max (Abs) (ID) :
10 A
Pulsed Drain Current-Max (IDM) :
30 A
Current - Continuous Drain (Id) @ 25°C :
10A Tc
RoHS :
Details
Package :
Tube
Transistor Type :
1 N-Channel
Gate to Source Voltage (Vgs) :
30V
Published :
2006
Drain to Source Breakdown Voltage :
800V
Tradename :
HiPerFET
Product Status :
Active
Number of Terminations :
3
Manufacturer :
IXYS
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Channels :
1 Channel
Configuration :
Single
Element Configuration :
Single
Channel Mode :
Enhancement
JEDEC-95 Code :
TO-263AA
Maximum Operating Temperature :
+ 150 C
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Qualification Status :
Not Qualified
FET Type :
N-Channel
Power Dissipation (Max) :
300W (Tc)
Input Capacitance (Ciss) (Max) @ Vds :
2050pF @ 25V
Gate Charge (Qg) (Max) @ Vgs :
40nC @ 10V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Product Category :
MOSFET
Lead Free :
Lead Free
Series :
HiPerFET™, PolarHT™
Mount :
Surface Mount
Power Dissipation-Max :
300W Tc
Vgs(th) (Max) @ Id :
5.5V @ 2.5mA
Drain to Source Voltage (Vdss) :
800V
Pin Count :
3
Transistor Polarity :
N-Channel
Terminal Position :
Single
DS Breakdown Voltage-Min :
800 V
Power Dissipation-Max (Abs) :
300 W
JESD-30 Code :
R-PSSO-G3
Rise Time :
22ns
Operating Mode :
ENHANCEMENT MODE
Supplier Device Package :
TO-263 (IXFA)
Package Shape :
RECTANGULAR
Minimum Operating Temperature :
- 55 C
Base Product Number :
IXFA10
Mounting Type :
Surface Mount
Surface Mount :
yes
Pbfree Code :
yes
Brand :
IXYS
Fall Time (Typ) :
22 ns
Packaging :
Tube
Case Connection :
DRAIN
Additional Feature :
AVALANCHE RATED
FET Feature :
--
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Terminal Finish :
Matte Tin (Sn)
Turn-Off Delay Time :
62 ns
Threshold Voltage :
5.5V
Terminal Form :
Gull wing
Vgs (Max) :
±30V
Number of Elements :
1
Datasheets
IXFA10N80P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFA10N80P from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Pins:3, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Number of Terminations:3, Number of Channels:1 Channel, Mounting Type:Surface Mount, IXFA10N80P pinout, IXFA10N80P datasheet PDF, IXFA10N80P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFA10N80P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFA10N80P


N-Channel Tube 1.1 Ω @ 5A, 10V ±30V 2050pF @ 25V 40nC @ 10V 800V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXFA10N80P Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 600 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 2050pF @ 25V.This device has a continuous drain current (ID) of [10A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=800V, the drain-source breakdown voltage is 800V.A device's drain current is its maximum continuous current, and this device's drain current is 10 A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 62 ns.A maximum pulsed drain current of 30 A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 5.5V.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 800 V.In order to operate this transistor, a voltage of 800V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXFA10N80P Features


the avalanche energy rating (Eas) is 600 mJ
a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 62 ns
based on its rated peak drain current 30 A.
a threshold voltage of 5.5V
a 800V drain to source voltage (Vdss)


IXFA10N80P Applications


There are a lot of IXYS
IXFA10N80P applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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