IXFA10N80P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Package :

Tube

Surface Mount :

yes

REACH SVHC :

No SVHC

Supplier Device Package :

TO-263 (IXFA)

Continuous Drain Current (ID) :

10A

Drain Current-Max (Abs) (ID) :

10 A

Product Category :

MOSFET

Package Shape :

RECTANGULAR

Series :

HiPerFET™, PolarHT™

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Maximum Operating Temperature :

+ 150 C

Terminal Position :

Single

Tradename :

HiPerFET

Published :

2006

JESD-30 Code :

R-PSSO-G3

Transistor Application :

SWITCHING

Element Configuration :

Single

Rds On (Max) @ Id, Vgs :

1.1 Ω @ 5A, 10V

Lead Free :

Lead Free

Drain to Source Voltage (Vdss) :

800V

Vgs (Max) :

±30V

Number of Elements :

1

Brand :

IXYS

Product Type :

MOSFET

Factory Lead Time :

30 Weeks

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Gate to Source Voltage (Vgs) :

30V

JESD-609 Code :

e3

Terminal Finish :

Matte Tin (Sn)

Case Connection :

DRAIN

Manufacturer :

IXYS

Power Dissipation-Max :

300W Tc

Pbfree Code :

yes

Drive Voltage (Max Rds On,Min Rds On) :

10V

Base Product Number :

IXFA10

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Channels :

1 Channel

DS Breakdown Voltage-Min :

800 V

JEDEC-95 Code :

TO-263AA

Pulsed Drain Current-Max (IDM) :

30 A

Power Dissipation (Max) :

300W (Tc)

Input Capacitance (Ciss) (Max) @ Vds :

2050pF @ 25V

Transistor Polarity :

N-Channel

Vgs(th) (Max) @ Id :

5.5V @ 2.5mA

Packaging :

Tube

Drain to Source Breakdown Voltage :

800V

Fall Time (Typ) :

22 ns

Power Dissipation :

300W

Number of Terminals :

3

Power Dissipation-Max (Abs) :

300 W

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Pins :

3

FET Type :

N-Channel

Threshold Voltage :

5.5V

Number of Terminations :

3

Mount :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Avalanche Energy Rating (Eas) :

600 mJ

Product Status :

Active

Polarity/Channel Type :

N-Channel

RoHS :

Details

Drain-source On Resistance-Max :

1.1 Ω

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Qualification Status :

Not Qualified

ECCN Code :

EAR99

Reach Compliance Code :

not_compliant

Rise Time :

22ns

Channel Mode :

Enhancement

FET Feature :

--

Minimum Operating Temperature :

- 55 C

Transistor Type :

1 N-Channel

Operating Mode :

ENHANCEMENT MODE

Pin Count :

3

Turn-Off Delay Time :

62 ns

Mounting Style :

SMD/SMT

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Configuration :

Single

Additional Feature :

AVALANCHE RATED