IXFA10N80P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

800V

Power Dissipation-Max :

300W Tc

REACH SVHC :

No SVHC

Pin Count :

3

Qualification Status :

Not Qualified

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation :

300W

Minimum Operating Temperature :

- 55 C

Vgs(th) (Max) @ Id :

5.5V @ 2.5mA

Pulsed Drain Current-Max (IDM) :

30 A

Series :

HiPerFET™, PolarHT™

Element Configuration :

Single

FET Type :

N-Channel

Manufacturer :

IXYS

Packaging :

Tube

Operating Mode :

ENHANCEMENT MODE

Number of Terminals :

3

Mounting Style :

SMD/SMT

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Drain-source On Resistance-Max :

1.1 Ω

Terminal Finish :

Matte Tin (Sn)

Polarity/Channel Type :

N-Channel

FET Feature :

--

Mounting Type :

Surface Mount

Factory Lead Time :

30 Weeks

Drain to Source Breakdown Voltage :

800V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JEDEC-95 Code :

TO-263AA

Terminal Position :

Single

Terminal Form :

Gull wing

DS Breakdown Voltage-Min :

800 V

Supplier Device Package :

TO-263 (IXFA)

Brand :

IXYS

Lead Free :

Lead Free

Surface Mount :

yes

Gate to Source Voltage (Vgs) :

30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Tradename :

HiPerFET

Power Dissipation (Max) :

300W (Tc)

Published :

2006

Threshold Voltage :

5.5V

Fall Time (Typ) :

22 ns

Avalanche Energy Rating (Eas) :

600 mJ

Power Dissipation-Max (Abs) :

300 W

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

10A

Case Connection :

DRAIN

Vgs (Max) :

±30V

Product Type :

MOSFET

RoHS :

Details

Rds On (Max) @ Id, Vgs :

1.1 Ω @ 5A, 10V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Pins :

3

Input Capacitance (Ciss) (Max) @ Vds :

2050pF @ 25V

Package Shape :

RECTANGULAR

RoHS Status :

ROHS3 Compliant

Number of Channels :

1 Channel

Product Status :

Active

Transistor Type :

1 N-Channel

Transistor Application :

SWITCHING

Base Product Number :

IXFA10

Number of Terminations :

3

Drain Current-Max (Abs) (ID) :

10 A

Maximum Operating Temperature :

+ 150 C

Transistor Polarity :

N-Channel

Additional Feature :

AVALANCHE RATED

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

ECCN Code :

EAR99

Product Category :

MOSFET

Number of Elements :

1

Package :

Tube

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Turn-Off Delay Time :

62 ns

Rise Time :

22ns

Channel Mode :

Enhancement

Operating Temperature :

-55°C~150°C TJ

Mount :

Surface Mount

Configuration :

Single

Reach Compliance Code :

not_compliant

JESD-30 Code :

R-PSSO-G3

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

JESD-609 Code :

e3

Pbfree Code :

yes