IXFA10N80P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

Continuous Drain Current (ID) :

10A

Package Shape :

RECTANGULAR

FET Feature :

--

Turn-Off Delay Time :

62 ns

Threshold Voltage :

5.5V

Supplier Device Package :

TO-263 (IXFA)

Manufacturer :

IXYS

Package :

Tube

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS :

Details

Rise Time :

22ns

DS Breakdown Voltage-Min :

800 V

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

30 A

Product Status :

Active

Factory Lead Time :

30 Weeks

Number of Channels :

1 Channel

Transistor Element Material :

SILICON

Additional Feature :

AVALANCHE RATED

Terminal Position :

Single

Power Dissipation-Max :

300W Tc

Pin Count :

3

Minimum Operating Temperature :

- 55 C

Maximum Operating Temperature :

+ 150 C

Vgs (Max) :

±30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

HiPerFET™, PolarHT™

Qualification Status :

Not Qualified

Reach Compliance Code :

not_compliant

JESD-609 Code :

e3

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Operating Temperature :

-55°C~150°C TJ

Pbfree Code :

yes

Number of Pins :

3

Power Dissipation-Max (Abs) :

300 W

JEDEC-95 Code :

TO-263AA

Channel Mode :

Enhancement

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Power Dissipation :

300W

Number of Terminations :

3

Lead Free :

Lead Free

Surface Mount :

yes

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Form :

Gull wing

Input Capacitance (Ciss) (Max) @ Vds :

2050pF @ 25V

Packaging :

Tube

FET Type :

N-Channel

Terminal Finish :

Matte Tin (Sn)

Vgs(th) (Max) @ Id :

5.5V @ 2.5mA

ECCN Code :

EAR99

JESD-30 Code :

R-PSSO-G3

Base Product Number :

IXFA10

Brand :

IXYS

Tradename :

HiPerFET

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Polarity :

N-Channel

Mounting Type :

Surface Mount

Fall Time (Typ) :

22 ns

Mount :

Surface Mount

Drain to Source Voltage (Vdss) :

800V

Drain to Source Breakdown Voltage :

800V

Polarity/Channel Type :

N-Channel

Transistor Type :

1 N-Channel

Avalanche Energy Rating (Eas) :

600 mJ

Product Type :

MOSFET

Mounting Style :

SMD/SMT

Drain-source On Resistance-Max :

1.1 Ω

Number of Terminals :

3

REACH SVHC :

No SVHC

Power Dissipation (Max) :

300W (Tc)

Element Configuration :

Single

Case Connection :

DRAIN

Product Category :

MOSFET

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

1.1 Ω @ 5A, 10V

Published :

2006

RoHS Status :

ROHS3 Compliant

Drain Current-Max (Abs) (ID) :

10 A

Gate to Source Voltage (Vgs) :

30V

Configuration :

Single