IXFA10N80P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

Gull wing

Vgs (Max) :

±30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Product Category :

MOSFET

Power Dissipation-Max :

300W Tc

Transistor Type :

1 N-Channel

Terminal Position :

Single

Mounting Style :

SMD/SMT

FET Type :

N-Channel

Pin Count :

3

Maximum Operating Temperature :

+ 150 C

Lead Free :

Lead Free

Factory Lead Time :

30 Weeks

Fall Time (Typ) :

22 ns

Gate to Source Voltage (Vgs) :

30V

Threshold Voltage :

5.5V

Avalanche Energy Rating (Eas) :

600 mJ

Brand :

IXYS

REACH SVHC :

No SVHC

Rise Time :

22ns

RoHS Status :

ROHS3 Compliant

Pulsed Drain Current-Max (IDM) :

30 A

FET Feature :

--

Vgs(th) (Max) @ Id :

5.5V @ 2.5mA

Power Dissipation :

300W

Product Type :

MOSFET

Manufacturer :

IXYS

Continuous Drain Current (ID) :

10A

Pbfree Code :

yes

Terminal Finish :

Matte Tin (Sn)

Power Dissipation (Max) :

300W (Tc)

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

Mounting Type :

Surface Mount

Tradename :

HiPerFET

Drain to Source Breakdown Voltage :

800V

Turn-Off Delay Time :

62 ns

Number of Terminations :

3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Channels :

1 Channel

Minimum Operating Temperature :

- 55 C

Number of Pins :

3

Package Shape :

RECTANGULAR

Package :

Tube

Base Product Number :

IXFA10

Channel Mode :

Enhancement

Transistor Polarity :

N-Channel

Transistor Element Material :

SILICON

RoHS :

Details

Surface Mount :

yes

Drive Voltage (Max Rds On,Min Rds On) :

10V

Polarity/Channel Type :

N-Channel

Configuration :

Single

Number of Elements :

1

Drain-source On Resistance-Max :

1.1 Ω

JESD-30 Code :

R-PSSO-G3

DS Breakdown Voltage-Min :

800 V

Operating Mode :

ENHANCEMENT MODE

JEDEC-95 Code :

TO-263AA

Supplier Device Package :

TO-263 (IXFA)

Drain to Source Voltage (Vdss) :

800V

Series :

HiPerFET™, PolarHT™

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Input Capacitance (Ciss) (Max) @ Vds :

2050pF @ 25V

Element Configuration :

Single

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Drain Current-Max (Abs) (ID) :

10 A

Case Connection :

DRAIN

Mount :

Surface Mount

Product Status :

Active

Power Dissipation-Max (Abs) :

300 W

Reach Compliance Code :

not_compliant

Additional Feature :

AVALANCHE RATED

Operating Temperature :

-55°C~150°C TJ

Number of Terminals :

3

Qualification Status :

Not Qualified

Published :

2006

FET Technology :

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code :

e3

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

1.1 Ω @ 5A, 10V