IXFA10N80P

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Mfr.Part #
IXFA10N80P
Manufacturer
Littelfuse
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 800V 10A TO263
Stock
1
In Stock :
1

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
10A Tc
Brand :
IXYS
Transistor Type :
1 N-Channel
Series :
HiPerFET™, PolarHT™
Vgs (Max) :
±30V
Minimum Operating Temperature :
- 55 C
Supplier Device Package :
TO-263 (IXFA)
Vgs(th) (Max) @ Id :
5.5V @ 2.5mA
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mounting Style :
SMD/SMT
Continuous Drain Current (ID) :
10A
Fall Time (Typ) :
22 ns
Packaging :
Tube
FET Feature :
--
Power Dissipation :
300W
Drain to Source Breakdown Voltage :
800V
RoHS :
Details
Threshold Voltage :
5.5V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Surface Mount :
yes
Pulsed Drain Current-Max (IDM) :
30 A
Rds On (Max) @ Id, Vgs :
1.1 Ω @ 5A, 10V
Operating Temperature :
-55°C~150°C TJ
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Number of Terminals :
3
Tradename :
HiPerFET
Operating Mode :
ENHANCEMENT MODE
Product Status :
Active
Factory Lead Time :
30 Weeks
Number of Pins :
3
Base Product Number :
IXFA10
Qualification Status :
Not Qualified
Reach Compliance Code :
not_compliant
Element Configuration :
Single
ECCN Code :
EAR99
Pbfree Code :
yes
Avalanche Energy Rating (Eas) :
600 mJ
FET Type :
N-Channel
Drive Voltage (Max Rds On,Min Rds On) :
10V
Gate to Source Voltage (Vgs) :
30V
Drain Current-Max (Abs) (ID) :
10 A
Number of Terminations :
3
Drain to Source Voltage (Vdss) :
800V
Package Shape :
RECTANGULAR
Drain-source On Resistance-Max :
1.1 Ω
Mounting Type :
Surface Mount
Mount :
Surface Mount
RoHS Status :
ROHS3 Compliant
DS Breakdown Voltage-Min :
800 V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Power Dissipation-Max :
300W Tc
Rise Time :
22ns
Additional Feature :
AVALANCHE RATED
Transistor Polarity :
N-Channel
Pin Count :
3
REACH SVHC :
No SVHC
Power Dissipation-Max (Abs) :
300 W
Power Dissipation (Max) :
300W (Tc)
Input Capacitance (Ciss) (Max) @ Vds :
2050pF @ 25V
Lead Free :
Lead Free
Case Connection :
DRAIN
Number of Elements :
1
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
JEDEC-95 Code :
TO-263AA
Manufacturer :
IXYS
Turn-Off Delay Time :
62 ns
Package :
Tube
Terminal Form :
Gull wing
Terminal Finish :
Matte Tin (Sn)
JESD-30 Code :
R-PSSO-G3
Gate Charge (Qg) (Max) @ Vgs :
40nC @ 10V
Maximum Operating Temperature :
+ 150 C
Polarity/Channel Type :
N-Channel
Transistor Application :
SWITCHING
Configuration :
Single
JESD-609 Code :
e3
Number of Channels :
1 Channel
Published :
2006
Terminal Position :
Single
Product Type :
MOSFET
Transistor Element Material :
SILICON
Channel Mode :
Enhancement
Product Category :
MOSFET
Datasheets
IXFA10N80P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFA10N80P from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Pins:3, Number of Terminations:3, Mounting Type:Surface Mount, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Number of Channels:1 Channel, IXFA10N80P pinout, IXFA10N80P datasheet PDF, IXFA10N80P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFA10N80P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFA10N80P


N-Channel Tube 1.1 Ω @ 5A, 10V ±30V 2050pF @ 25V 40nC @ 10V 800V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXFA10N80P Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 600 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 2050pF @ 25V.This device has a continuous drain current (ID) of [10A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=800V, the drain-source breakdown voltage is 800V.A device's drain current is its maximum continuous current, and this device's drain current is 10 A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 62 ns.A maximum pulsed drain current of 30 A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 5.5V.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 800 V.In order to operate this transistor, a voltage of 800V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXFA10N80P Features


the avalanche energy rating (Eas) is 600 mJ
a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 62 ns
based on its rated peak drain current 30 A.
a threshold voltage of 5.5V
a 800V drain to source voltage (Vdss)


IXFA10N80P Applications


There are a lot of IXYS
IXFA10N80P applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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