IXFA130N10T2

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Mfr.Part #
IXFA130N10T2
Manufacturer
Littelfuse
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 100V 130A TO263
Stock
17,314
In Stock :
17,314

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Product Status :
Active
Product Type :
MOSFET
Package Shape :
RECTANGULAR
RoHS :
Details
Operating Mode :
ENHANCEMENT MODE
Operating Temperature :
-55°C~175°C TJ
Pulsed Drain Current-Max (IDM) :
300A
Polarity/Channel Type :
N-Channel
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Terminal Form :
Gull wing
Reach Compliance Code :
not_compliant
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package :
TO-263 (IXFA)
Additional Feature :
AVALANCHE RATED
Tradename :
HiPerFET
Terminal Finish :
Matte Tin (Sn)
Drain-source On Resistance-Max :
0.0091Ohm
Number of Elements :
1
Published :
2009
Terminal Position :
Single
JESD-609 Code :
e3
Rds On Max :
9.1 mΩ
Channel Mode :
Enhancement
Number of Terminals :
2
Gate Charge (Qg) (Max) @ Vgs :
130nC @ 10V
Transistor Polarity :
N-Channel
Pin Count :
3
Rds On (Max) @ Id, Vgs :
9.1m Ω @ 65A, 10V
Maximum Operating Temperature :
+ 175 C
Transistor Element Material :
SILICON
Transistor Application :
SWITCHING
Input Capacitance (Ciss) (Max) @ Vds :
6600pF @ 25V
Drain to Source Voltage (Vdss) :
100V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Configuration :
SINGLE WITH BUILT-IN DIODE
Minimum Operating Temperature :
- 55 C
Drain Current-Max (Abs) (ID) :
130 A
DS Breakdown Voltage-Min :
100V
Power Dissipation-Max (Abs) :
360 W
Continuous Drain Current (ID) :
130A
FET Feature :
--
Mount :
Surface Mount
Drive Voltage (Max Rds On,Min Rds On) :
10V
Pbfree Code :
yes
FET Type :
N-Channel
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Vgs(th) (Max) @ Id :
4.5V @ 1mA
Vgs (Max) :
±20V
Base Product Number :
IXFA130
Current - Continuous Drain (Id) @ 25°C :
130A Tc
Power Dissipation-Max :
360W Tc
Avalanche Energy Rating (Eas) :
800 mJ
Input Capacitance :
6.6 nF
Factory Lead Time :
30 Weeks
Transistor Type :
1 N-Channel
RoHS Status :
ROHS3 Compliant
Brand :
IXYS
Product Category :
MOSFET
Packaging :
Tube
ECCN Code :
EAR99
Number of Channels :
1 Channel
Series :
GigaMOS™, HiPerFET™, TrenchT2™
Mounting Style :
SMD/SMT
Number of Terminations :
2
Package :
Tube
Qualification Status :
Not Qualified
Power Dissipation (Max) :
360W (Tc)
Case Connection :
DRAIN
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Manufacturer :
IXYS
Surface Mount :
yes
Mounting Type :
Surface Mount
JESD-30 Code :
R-PSSO-G2
Max Power Dissipation :
360 W
Datasheets
IXFA130N10T2
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFA130N10T2 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~175°C TJ, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Number of Channels:1 Channel, Number of Terminations:2, Mounting Type:Surface Mount, IXFA130N10T2 pinout, IXFA130N10T2 datasheet PDF, IXFA130N10T2 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFA130N10T2 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFA130N10T2


N-Channel Tube 9.1m Ω @ 65A, 10V ±20V 6600pF @ 25V 130nC @ 10V 100V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXFA130N10T2 Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 800 mJ.A device's maximum input capacitance is 6600pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 130A for this device. Drain current refers to the capacity of the device to conduct continuous current.Its drain current is 130 A, and it is the maximum continuous current the device can conduct.Its maximum pulsed drain current is 300A, which is also its maximum rating peak drainage current.For normal operation, maintain the DS breakdown voltage above 100V.To operate this transistor, you need to apply a 100V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IXFA130N10T2 Features


the avalanche energy rating (Eas) is 800 mJ
a continuous drain current (ID) of 130A
based on its rated peak drain current 300A.
a 100V drain to source voltage (Vdss)


IXFA130N10T2 Applications


There are a lot of IXYS
IXFA130N10T2 applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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