IXFA130N10T2

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Mfr.Part #
IXFA130N10T2
Manufacturer
Littelfuse
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 100V 130A TO263
Stock
17,314
In Stock :
17,314

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Maximum Operating Temperature :
+ 175 C
Reach Compliance Code :
not_compliant
Input Capacitance :
6.6 nF
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Rds On (Max) @ Id, Vgs :
9.1m Ω @ 65A, 10V
Polarity/Channel Type :
N-Channel
Pin Count :
3
Channel Mode :
Enhancement
Supplier Device Package :
TO-263 (IXFA)
Power Dissipation (Max) :
360W (Tc)
Transistor Application :
SWITCHING
Surface Mount :
yes
Avalanche Energy Rating (Eas) :
800 mJ
Vgs(th) (Max) @ Id :
4.5V @ 1mA
Drain to Source Voltage (Vdss) :
100V
Number of Terminals :
2
Case Connection :
DRAIN
Additional Feature :
AVALANCHE RATED
Mounting Style :
SMD/SMT
Transistor Polarity :
N-Channel
RoHS Status :
ROHS3 Compliant
DS Breakdown Voltage-Min :
100V
Series :
GigaMOS™, HiPerFET™, TrenchT2™
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Package :
Tube
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Input Capacitance (Ciss) (Max) @ Vds :
6600pF @ 25V
Qualification Status :
Not Qualified
Published :
2009
Rds On Max :
9.1 mΩ
Tradename :
HiPerFET
Pulsed Drain Current-Max (IDM) :
300A
Number of Elements :
1
FET Type :
N-Channel
FET Feature :
--
Transistor Type :
1 N-Channel
Minimum Operating Temperature :
- 55 C
Terminal Position :
Single
Max Power Dissipation :
360 W
Drain-source On Resistance-Max :
0.0091Ohm
RoHS :
Details
Power Dissipation-Max (Abs) :
360 W
Manufacturer :
IXYS
Operating Mode :
ENHANCEMENT MODE
Power Dissipation-Max :
360W Tc
Vgs (Max) :
±20V
Package Shape :
RECTANGULAR
Continuous Drain Current (ID) :
130A
JESD-609 Code :
e3
Packaging :
Tube
Product Category :
MOSFET
Number of Channels :
1 Channel
Drive Voltage (Max Rds On,Min Rds On) :
10V
Pbfree Code :
yes
Current - Continuous Drain (Id) @ 25°C :
130A Tc
Brand :
IXYS
Terminal Form :
Gull wing
Drain Current-Max (Abs) (ID) :
130 A
Mount :
Surface Mount
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Base Product Number :
IXFA130
Factory Lead Time :
30 Weeks
Gate Charge (Qg) (Max) @ Vgs :
130nC @ 10V
Operating Temperature :
-55°C~175°C TJ
Product Type :
MOSFET
Number of Terminations :
2
JESD-30 Code :
R-PSSO-G2
Mounting Type :
Surface Mount
ECCN Code :
EAR99
Configuration :
SINGLE WITH BUILT-IN DIODE
Product Status :
Active
Terminal Finish :
Matte Tin (Sn)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Element Material :
SILICON
Datasheets
IXFA130N10T2
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFA130N10T2 from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Operating Temperature:-55°C~175°C TJ, Number of Terminations:2, Mounting Type:Surface Mount, IXFA130N10T2 pinout, IXFA130N10T2 datasheet PDF, IXFA130N10T2 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFA130N10T2 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFA130N10T2


N-Channel Tube 9.1m Ω @ 65A, 10V ±20V 6600pF @ 25V 130nC @ 10V 100V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXFA130N10T2 Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 800 mJ.A device's maximum input capacitance is 6600pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 130A for this device. Drain current refers to the capacity of the device to conduct continuous current.Its drain current is 130 A, and it is the maximum continuous current the device can conduct.Its maximum pulsed drain current is 300A, which is also its maximum rating peak drainage current.For normal operation, maintain the DS breakdown voltage above 100V.To operate this transistor, you need to apply a 100V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IXFA130N10T2 Features


the avalanche energy rating (Eas) is 800 mJ
a continuous drain current (ID) of 130A
based on its rated peak drain current 300A.
a 100V drain to source voltage (Vdss)


IXFA130N10T2 Applications


There are a lot of IXYS
IXFA130N10T2 applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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