IXFA130N10T2

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Surface Mount :

yes

Channel Mode :

Enhancement

Number of Channels :

1 Channel

Power Dissipation-Max (Abs) :

360 W

Mounting Type :

Surface Mount

Transistor Type :

1 N-Channel

Minimum Operating Temperature :

- 55 C

Qualification Status :

Not Qualified

Rds On (Max) @ Id, Vgs :

9.1m Ω @ 65A, 10V

Reach Compliance Code :

not_compliant

Product Category :

MOSFET

Vgs(th) (Max) @ Id :

4.5V @ 1mA

Pulsed Drain Current-Max (IDM) :

300A

Current - Continuous Drain (Id) @ 25°C :

130A Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

DS Breakdown Voltage-Min :

100V

Supplier Device Package :

TO-263 (IXFA)

Terminal Position :

Single

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Product Type :

MOSFET

FET Feature :

--

Terminal Finish :

Matte Tin (Sn)

Factory Lead Time :

30 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2009

ECCN Code :

EAR99

Product Status :

Active

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

Mount :

Surface Mount

Additional Feature :

AVALANCHE RATED

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

RoHS :

Details

Pbfree Code :

yes

Gate Charge (Qg) (Max) @ Vgs :

130nC @ 10V

Drain Current-Max (Abs) (ID) :

130 A

Base Product Number :

IXFA130

Number of Terminals :

2

Polarity/Channel Type :

N-Channel

Transistor Polarity :

N-Channel

Power Dissipation-Max :

360W Tc

Manufacturer :

IXYS

RoHS Status :

ROHS3 Compliant

Number of Terminations :

2

Max Power Dissipation :

360 W

Power Dissipation (Max) :

360W (Tc)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package Shape :

RECTANGULAR

Avalanche Energy Rating (Eas) :

800 mJ

Brand :

IXYS

Mounting Style :

SMD/SMT

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~175°C TJ

Case Connection :

DRAIN

Rds On Max :

9.1 mΩ

Packaging :

Tube

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

130A

JESD-30 Code :

R-PSSO-G2

Vgs (Max) :

±20V

Drain to Source Voltage (Vdss) :

100V

FET Type :

N-Channel

Drain-source On Resistance-Max :

0.0091Ohm

Number of Elements :

1

Tradename :

HiPerFET

Pin Count :

3

Maximum Operating Temperature :

+ 175 C

Package :

Tube

Input Capacitance :

6.6 nF

Input Capacitance (Ciss) (Max) @ Vds :

6600pF @ 25V

JESD-609 Code :

e3

Series :

GigaMOS™, HiPerFET™, TrenchT2™