IXFA130N10T2

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Package Shape :

RECTANGULAR

Rds On (Max) @ Id, Vgs :

9.1m Ω @ 65A, 10V

Continuous Drain Current (ID) :

130A

Mounting Type :

Surface Mount

Factory Lead Time :

30 Weeks

Power Dissipation (Max) :

360W (Tc)

Terminal Finish :

Matte Tin (Sn)

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Rds On Max :

9.1 mΩ

Drain Current-Max (Abs) (ID) :

130 A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.0091Ohm

Packaging :

Tube

Minimum Operating Temperature :

- 55 C

Polarity/Channel Type :

N-Channel

Qualification Status :

Not Qualified

Current - Continuous Drain (Id) @ 25°C :

130A Tc

Max Power Dissipation :

360 W

RoHS :

Details

Published :

2009

Supplier Device Package :

TO-263 (IXFA)

Operating Mode :

ENHANCEMENT MODE

Maximum Operating Temperature :

+ 175 C

Package :

Tube

Base Product Number :

IXFA130

Avalanche Energy Rating (Eas) :

800 mJ

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Vgs(th) (Max) @ Id :

4.5V @ 1mA

Mount :

Surface Mount

Case Connection :

DRAIN

ECCN Code :

EAR99

Pin Count :

3

Product Category :

MOSFET

Input Capacitance (Ciss) (Max) @ Vds :

6600pF @ 25V

Terminal Position :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Channels :

1 Channel

Transistor Polarity :

N-Channel

DS Breakdown Voltage-Min :

100V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Series :

GigaMOS™, HiPerFET™, TrenchT2™

Gate Charge (Qg) (Max) @ Vgs :

130nC @ 10V

Reach Compliance Code :

not_compliant

Power Dissipation-Max :

360W Tc

Product Type :

MOSFET

Additional Feature :

AVALANCHE RATED

Input Capacitance :

6.6 nF

Tradename :

HiPerFET

Mounting Style :

SMD/SMT

Power Dissipation-Max (Abs) :

360 W

Manufacturer :

IXYS

Surface Mount :

yes

Brand :

IXYS

Channel Mode :

Enhancement

JESD-609 Code :

e3

Terminal Form :

Gull wing

Vgs (Max) :

±20V

FET Feature :

--

JESD-30 Code :

R-PSSO-G2

Number of Terminals :

2

Pulsed Drain Current-Max (IDM) :

300A

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Product Status :

Active

Operating Temperature :

-55°C~175°C TJ

Transistor Type :

1 N-Channel

Drain to Source Voltage (Vdss) :

100V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Application :

SWITCHING

FET Type :

N-Channel

Number of Terminations :

2