IXFA130N10T2

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Mfr.Part #
IXFA130N10T2
Manufacturer
Littelfuse
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 100V 130A TO263
Stock
17,314
In Stock :
17,314

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Brand :
IXYS
Drain Current-Max (Abs) (ID) :
130 A
Product Status :
Active
Series :
GigaMOS™, HiPerFET™, TrenchT2™
Rds On Max :
9.1 mΩ
Maximum Operating Temperature :
+ 175 C
RoHS Status :
ROHS3 Compliant
Pbfree Code :
yes
Polarity/Channel Type :
N-Channel
JESD-609 Code :
e3
Supplier Device Package :
TO-263 (IXFA)
Power Dissipation (Max) :
360W (Tc)
Gate Charge (Qg) (Max) @ Vgs :
130nC @ 10V
Package Shape :
RECTANGULAR
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Mounting Type :
Surface Mount
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
FET Feature :
--
DS Breakdown Voltage-Min :
100V
Terminal Finish :
Matte Tin (Sn)
Channel Mode :
Enhancement
Pulsed Drain Current-Max (IDM) :
300A
Operating Mode :
ENHANCEMENT MODE
Power Dissipation-Max (Abs) :
360 W
Reach Compliance Code :
not_compliant
Minimum Operating Temperature :
- 55 C
Number of Terminals :
2
Surface Mount :
yes
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Manufacturer :
IXYS
Factory Lead Time :
30 Weeks
Terminal Position :
Single
Published :
2009
Mount :
Surface Mount
Number of Elements :
1
Number of Terminations :
2
Avalanche Energy Rating (Eas) :
800 mJ
Transistor Application :
SWITCHING
Package :
Tube
Product Type :
MOSFET
ECCN Code :
EAR99
Tradename :
HiPerFET
Transistor Type :
1 N-Channel
Drain-source On Resistance-Max :
0.0091Ohm
Transistor Element Material :
SILICON
Product Category :
MOSFET
Pin Count :
3
Vgs (Max) :
±20V
Number of Channels :
1 Channel
Configuration :
SINGLE WITH BUILT-IN DIODE
Max Power Dissipation :
360 W
RoHS :
Details
Input Capacitance (Ciss) (Max) @ Vds :
6600pF @ 25V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Qualification Status :
Not Qualified
Input Capacitance :
6.6 nF
Power Dissipation-Max :
360W Tc
Case Connection :
DRAIN
Transistor Polarity :
N-Channel
Packaging :
Tube
Current - Continuous Drain (Id) @ 25°C :
130A Tc
Operating Temperature :
-55°C~175°C TJ
JESD-30 Code :
R-PSSO-G2
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Rds On (Max) @ Id, Vgs :
9.1m Ω @ 65A, 10V
Drain to Source Voltage (Vdss) :
100V
Additional Feature :
AVALANCHE RATED
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting Style :
SMD/SMT
Vgs(th) (Max) @ Id :
4.5V @ 1mA
FET Type :
N-Channel
Continuous Drain Current (ID) :
130A
Terminal Form :
Gull wing
Base Product Number :
IXFA130
Datasheets
IXFA130N10T2
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFA130N10T2 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Number of Terminations:2, Number of Channels:1 Channel, Operating Temperature:-55°C~175°C TJ, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, IXFA130N10T2 pinout, IXFA130N10T2 datasheet PDF, IXFA130N10T2 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFA130N10T2 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFA130N10T2


N-Channel Tube 9.1m Ω @ 65A, 10V ±20V 6600pF @ 25V 130nC @ 10V 100V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXFA130N10T2 Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 800 mJ.A device's maximum input capacitance is 6600pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 130A for this device. Drain current refers to the capacity of the device to conduct continuous current.Its drain current is 130 A, and it is the maximum continuous current the device can conduct.Its maximum pulsed drain current is 300A, which is also its maximum rating peak drainage current.For normal operation, maintain the DS breakdown voltage above 100V.To operate this transistor, you need to apply a 100V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IXFA130N10T2 Features


the avalanche energy rating (Eas) is 800 mJ
a continuous drain current (ID) of 130A
based on its rated peak drain current 300A.
a 100V drain to source voltage (Vdss)


IXFA130N10T2 Applications


There are a lot of IXYS
IXFA130N10T2 applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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