IXFA130N10T2
- Mfr.Part #
- IXFA130N10T2
- Manufacturer
- Littelfuse
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 130A TO263
- Stock
- 17,314
- In Stock :
- 17,314
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs(th) (Max) @ Id :
- 4.5V @ 1mA
- Package Shape :
- RECTANGULAR
- Tradename :
- HiPerFET
- Vgs (Max) :
- ±20V
- Input Capacitance :
- 6.6 nF
- Surface Mount :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Product Type :
- MOSFET
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Input Capacitance (Ciss) (Max) @ Vds :
- 6600pF @ 25V
- Manufacturer :
- IXYS
- Gate Charge (Qg) (Max) @ Vgs :
- 130nC @ 10V
- Operating Temperature :
- -55°C~175°C TJ
- Qualification Status :
- Not Qualified
- Factory Lead Time :
- 30 Weeks
- Transistor Element Material :
- SILICON
- Reach Compliance Code :
- not_compliant
- Continuous Drain Current (ID) :
- 130A
- Drain to Source Voltage (Vdss) :
- 100V
- Mounting Type :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Power Dissipation (Max) :
- 360W (Tc)
- FET Type :
- N-Channel
- Max Power Dissipation :
- 360 W
- RoHS Status :
- ROHS3 Compliant
- Transistor Type :
- 1 N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 130A Tc
- Number of Elements :
- 1
- JESD-609 Code :
- e3
- Minimum Operating Temperature :
- - 55 C
- Supplier Device Package :
- TO-263 (IXFA)
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Terminations :
- 2
- Additional Feature :
- AVALANCHE RATED
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- DS Breakdown Voltage-Min :
- 100V
- Transistor Application :
- SWITCHING
- Pin Count :
- 3
- Rds On Max :
- 9.1 mΩ
- Terminal Finish :
- Matte Tin (Sn)
- Mount :
- Surface Mount
- Product Category :
- MOSFET
- Pbfree Code :
- yes
- Transistor Polarity :
- N-Channel
- Power Dissipation-Max :
- 360W Tc
- Power Dissipation-Max (Abs) :
- 360 W
- Rds On (Max) @ Id, Vgs :
- 9.1m Ω @ 65A, 10V
- Drain Current-Max (Abs) (ID) :
- 130 A
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- FET Feature :
- --
- Number of Channels :
- 1 Channel
- Number of Terminals :
- 2
- Channel Mode :
- Enhancement
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Drain-source On Resistance-Max :
- 0.0091Ohm
- Case Connection :
- DRAIN
- Package :
- Tube
- JESD-30 Code :
- R-PSSO-G2
- Base Product Number :
- IXFA130
- RoHS :
- Details
- Mounting Style :
- SMD/SMT
- Series :
- GigaMOS™, HiPerFET™, TrenchT2™
- Product Status :
- Active
- Terminal Form :
- Gull wing
- Avalanche Energy Rating (Eas) :
- 800 mJ
- Published :
- 2009
- Maximum Operating Temperature :
- + 175 C
- Terminal Position :
- Single
- Operating Mode :
- ENHANCEMENT MODE
- Packaging :
- Tube
- Brand :
- IXYS
- Polarity/Channel Type :
- N-Channel
- ECCN Code :
- EAR99
- Pulsed Drain Current-Max (IDM) :
- 300A
- Datasheets
- IXFA130N10T2

N-Channel Tube 9.1m Ω @ 65A, 10V ±20V 6600pF @ 25V 130nC @ 10V 100V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXFA130N10T2 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 800 mJ.A device's maximum input capacitance is 6600pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 130A for this device. Drain current refers to the capacity of the device to conduct continuous current.Its drain current is 130 A, and it is the maximum continuous current the device can conduct.Its maximum pulsed drain current is 300A, which is also its maximum rating peak drainage current.For normal operation, maintain the DS breakdown voltage above 100V.To operate this transistor, you need to apply a 100V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IXFA130N10T2 Features
the avalanche energy rating (Eas) is 800 mJ
a continuous drain current (ID) of 130A
based on its rated peak drain current 300A.
a 100V drain to source voltage (Vdss)
IXFA130N10T2 Applications
There are a lot of IXYS
IXFA130N10T2 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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