IXFA130N10T2
- Mfr.Part #
- IXFA130N10T2
- Manufacturer
- Littelfuse
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 130A TO263
- Stock
- 17,314
- In Stock :
- 17,314
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- DS Breakdown Voltage-Min :
- 100V
- Surface Mount :
- yes
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Polarity :
- N-Channel
- Rds On Max :
- 9.1 mΩ
- Transistor Type :
- 1 N-Channel
- Power Dissipation-Max (Abs) :
- 360 W
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Tradename :
- HiPerFET
- Input Capacitance (Ciss) (Max) @ Vds :
- 6600pF @ 25V
- Packaging :
- Tube
- Drain Current-Max (Abs) (ID) :
- 130 A
- Factory Lead Time :
- 30 Weeks
- Rds On (Max) @ Id, Vgs :
- 9.1m Ω @ 65A, 10V
- Avalanche Energy Rating (Eas) :
- 800 mJ
- Case Connection :
- DRAIN
- FET Feature :
- --
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Current - Continuous Drain (Id) @ 25°C :
- 130A Tc
- Mount :
- Surface Mount
- Number of Terminals :
- 2
- Number of Terminations :
- 2
- Product Category :
- MOSFET
- Additional Feature :
- AVALANCHE RATED
- Package Shape :
- RECTANGULAR
- Pbfree Code :
- yes
- Pin Count :
- 3
- Qualification Status :
- Not Qualified
- Mounting Style :
- SMD/SMT
- RoHS :
- Details
- JESD-609 Code :
- e3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Terminal Position :
- Single
- Power Dissipation (Max) :
- 360W (Tc)
- Operating Mode :
- ENHANCEMENT MODE
- JESD-30 Code :
- R-PSSO-G2
- Vgs(th) (Max) @ Id :
- 4.5V @ 1mA
- Brand :
- IXYS
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Pulsed Drain Current-Max (IDM) :
- 300A
- Mounting Type :
- Surface Mount
- Number of Channels :
- 1 Channel
- Manufacturer :
- IXYS
- Number of Elements :
- 1
- Max Power Dissipation :
- 360 W
- Supplier Device Package :
- TO-263 (IXFA)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Gate Charge (Qg) (Max) @ Vgs :
- 130nC @ 10V
- Transistor Application :
- SWITCHING
- Polarity/Channel Type :
- N-Channel
- Base Product Number :
- IXFA130
- Reach Compliance Code :
- not_compliant
- Input Capacitance :
- 6.6 nF
- FET Type :
- N-Channel
- Drain to Source Voltage (Vdss) :
- 100V
- Power Dissipation-Max :
- 360W Tc
- Continuous Drain Current (ID) :
- 130A
- Channel Mode :
- Enhancement
- Package :
- Tube
- Vgs (Max) :
- ±20V
- Minimum Operating Temperature :
- - 55 C
- Published :
- 2009
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Product Type :
- MOSFET
- Terminal Form :
- Gull wing
- Series :
- GigaMOS™, HiPerFET™, TrenchT2™
- Drain-source On Resistance-Max :
- 0.0091Ohm
- Terminal Finish :
- Matte Tin (Sn)
- Maximum Operating Temperature :
- + 175 C
- Product Status :
- Active
- Operating Temperature :
- -55°C~175°C TJ
- Datasheets
- IXFA130N10T2

N-Channel Tube 9.1m Ω @ 65A, 10V ±20V 6600pF @ 25V 130nC @ 10V 100V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXFA130N10T2 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 800 mJ.A device's maximum input capacitance is 6600pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 130A for this device. Drain current refers to the capacity of the device to conduct continuous current.Its drain current is 130 A, and it is the maximum continuous current the device can conduct.Its maximum pulsed drain current is 300A, which is also its maximum rating peak drainage current.For normal operation, maintain the DS breakdown voltage above 100V.To operate this transistor, you need to apply a 100V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IXFA130N10T2 Features
the avalanche energy rating (Eas) is 800 mJ
a continuous drain current (ID) of 130A
based on its rated peak drain current 300A.
a 100V drain to source voltage (Vdss)
IXFA130N10T2 Applications
There are a lot of IXYS
IXFA130N10T2 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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