IXFA130N10T2
- Mfr.Part #
- IXFA130N10T2
- Manufacturer
- Littelfuse
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 130A TO263
- Stock
- 17,314
- In Stock :
- 17,314
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate Charge (Qg) (Max) @ Vgs :
- 130nC @ 10V
- Power Dissipation-Max (Abs) :
- 360 W
- DS Breakdown Voltage-Min :
- 100V
- Pulsed Drain Current-Max (IDM) :
- 300A
- Drain Current-Max (Abs) (ID) :
- 130 A
- JESD-30 Code :
- R-PSSO-G2
- Package Shape :
- RECTANGULAR
- Terminal Finish :
- Matte Tin (Sn)
- Mounting Style :
- SMD/SMT
- Factory Lead Time :
- 30 Weeks
- Surface Mount :
- yes
- Current - Continuous Drain (Id) @ 25°C :
- 130A Tc
- Vgs (Max) :
- ±20V
- Product Status :
- Active
- Rds On (Max) @ Id, Vgs :
- 9.1m Ω @ 65A, 10V
- Continuous Drain Current (ID) :
- 130A
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Channel Mode :
- Enhancement
- Transistor Application :
- SWITCHING
- Terminal Position :
- Single
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- RoHS :
- Details
- Number of Terminals :
- 2
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Additional Feature :
- AVALANCHE RATED
- FET Feature :
- --
- Drain-source On Resistance-Max :
- 0.0091Ohm
- Minimum Operating Temperature :
- - 55 C
- Number of Elements :
- 1
- Number of Terminations :
- 2
- Drain to Source Voltage (Vdss) :
- 100V
- Transistor Polarity :
- N-Channel
- Manufacturer :
- IXYS
- Power Dissipation-Max :
- 360W Tc
- Product Type :
- MOSFET
- Mount :
- Surface Mount
- Case Connection :
- DRAIN
- Max Power Dissipation :
- 360 W
- Number of Channels :
- 1 Channel
- Product Category :
- MOSFET
- Terminal Form :
- Gull wing
- Reach Compliance Code :
- not_compliant
- Transistor Type :
- 1 N-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Maximum Operating Temperature :
- + 175 C
- JESD-609 Code :
- e3
- Rds On Max :
- 9.1 mΩ
- FET Type :
- N-Channel
- Supplier Device Package :
- TO-263 (IXFA)
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Pin Count :
- 3
- Base Product Number :
- IXFA130
- Input Capacitance (Ciss) (Max) @ Vds :
- 6600pF @ 25V
- ECCN Code :
- EAR99
- Vgs(th) (Max) @ Id :
- 4.5V @ 1mA
- Tradename :
- HiPerFET
- Avalanche Energy Rating (Eas) :
- 800 mJ
- Operating Temperature :
- -55°C~175°C TJ
- Package :
- Tube
- Packaging :
- Tube
- Pbfree Code :
- yes
- Qualification Status :
- Not Qualified
- Series :
- GigaMOS™, HiPerFET™, TrenchT2™
- Operating Mode :
- ENHANCEMENT MODE
- Polarity/Channel Type :
- N-Channel
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Power Dissipation (Max) :
- 360W (Tc)
- Published :
- 2009
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Input Capacitance :
- 6.6 nF
- Brand :
- IXYS
- Datasheets
- IXFA130N10T2

N-Channel Tube 9.1m Ω @ 65A, 10V ±20V 6600pF @ 25V 130nC @ 10V 100V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXFA130N10T2 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 800 mJ.A device's maximum input capacitance is 6600pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 130A for this device. Drain current refers to the capacity of the device to conduct continuous current.Its drain current is 130 A, and it is the maximum continuous current the device can conduct.Its maximum pulsed drain current is 300A, which is also its maximum rating peak drainage current.For normal operation, maintain the DS breakdown voltage above 100V.To operate this transistor, you need to apply a 100V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IXFA130N10T2 Features
the avalanche energy rating (Eas) is 800 mJ
a continuous drain current (ID) of 130A
based on its rated peak drain current 300A.
a 100V drain to source voltage (Vdss)
IXFA130N10T2 Applications
There are a lot of IXYS
IXFA130N10T2 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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