IXFA130N10T2

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Mfr.Part #
IXFA130N10T2
Manufacturer
Littelfuse
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 100V 130A TO263
Stock
17,314
In Stock :
17,314

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Terminal Form :
Gull wing
Operating Temperature :
-55°C~175°C TJ
Drain-source On Resistance-Max :
0.0091Ohm
Vgs (Max) :
±20V
Transistor Type :
1 N-Channel
Transistor Polarity :
N-Channel
Published :
2009
DS Breakdown Voltage-Min :
100V
Input Capacitance :
6.6 nF
Surface Mount :
yes
Mounting Type :
Surface Mount
Vgs(th) (Max) @ Id :
4.5V @ 1mA
Pbfree Code :
yes
RoHS :
Details
Transistor Application :
SWITCHING
Power Dissipation-Max :
360W Tc
Transistor Element Material :
SILICON
Minimum Operating Temperature :
- 55 C
Continuous Drain Current (ID) :
130A
Series :
GigaMOS™, HiPerFET™, TrenchT2™
Product Type :
MOSFET
Terminal Position :
Single
Tradename :
HiPerFET
Current - Continuous Drain (Id) @ 25°C :
130A Tc
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Additional Feature :
AVALANCHE RATED
Supplier Device Package :
TO-263 (IXFA)
Manufacturer :
IXYS
Number of Channels :
1 Channel
Max Power Dissipation :
360 W
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
ECCN Code :
EAR99
Gate Charge (Qg) (Max) @ Vgs :
130nC @ 10V
Drain to Source Voltage (Vdss) :
100V
Maximum Operating Temperature :
+ 175 C
Mounting Style :
SMD/SMT
Configuration :
SINGLE WITH BUILT-IN DIODE
Pulsed Drain Current-Max (IDM) :
300A
Reach Compliance Code :
not_compliant
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Input Capacitance (Ciss) (Max) @ Vds :
6600pF @ 25V
RoHS Status :
ROHS3 Compliant
FET Feature :
--
Base Product Number :
IXFA130
Terminal Finish :
Matte Tin (Sn)
Rds On Max :
9.1 mΩ
Pin Count :
3
Package Shape :
RECTANGULAR
Power Dissipation-Max (Abs) :
360 W
Power Dissipation (Max) :
360W (Tc)
Number of Terminations :
2
Rds On (Max) @ Id, Vgs :
9.1m Ω @ 65A, 10V
Packaging :
Tube
FET Type :
N-Channel
JESD-609 Code :
e3
Operating Mode :
ENHANCEMENT MODE
Mount :
Surface Mount
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Qualification Status :
Not Qualified
Brand :
IXYS
Factory Lead Time :
30 Weeks
Package :
Tube
Polarity/Channel Type :
N-Channel
Product Category :
MOSFET
Drain Current-Max (Abs) (ID) :
130 A
Drive Voltage (Max Rds On,Min Rds On) :
10V
Channel Mode :
Enhancement
Product Status :
Active
Avalanche Energy Rating (Eas) :
800 mJ
JESD-30 Code :
R-PSSO-G2
Case Connection :
DRAIN
Number of Terminals :
2
Number of Elements :
1
Datasheets
IXFA130N10T2
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFA130N10T2 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~175°C TJ, Mounting Type:Surface Mount, Number of Channels:1 Channel, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Number of Terminations:2, IXFA130N10T2 pinout, IXFA130N10T2 datasheet PDF, IXFA130N10T2 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFA130N10T2 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFA130N10T2


N-Channel Tube 9.1m Ω @ 65A, 10V ±20V 6600pF @ 25V 130nC @ 10V 100V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXFA130N10T2 Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 800 mJ.A device's maximum input capacitance is 6600pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 130A for this device. Drain current refers to the capacity of the device to conduct continuous current.Its drain current is 130 A, and it is the maximum continuous current the device can conduct.Its maximum pulsed drain current is 300A, which is also its maximum rating peak drainage current.For normal operation, maintain the DS breakdown voltage above 100V.To operate this transistor, you need to apply a 100V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IXFA130N10T2 Features


the avalanche energy rating (Eas) is 800 mJ
a continuous drain current (ID) of 130A
based on its rated peak drain current 300A.
a 100V drain to source voltage (Vdss)


IXFA130N10T2 Applications


There are a lot of IXYS
IXFA130N10T2 applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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