IXFA130N10T2

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Mfr.Part #
IXFA130N10T2
Manufacturer
Littelfuse
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 100V 130A TO263
Stock
17,314
In Stock :
17,314

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Gate Charge (Qg) (Max) @ Vgs :
130nC @ 10V
Power Dissipation-Max (Abs) :
360 W
DS Breakdown Voltage-Min :
100V
Pulsed Drain Current-Max (IDM) :
300A
Drain Current-Max (Abs) (ID) :
130 A
JESD-30 Code :
R-PSSO-G2
Package Shape :
RECTANGULAR
Terminal Finish :
Matte Tin (Sn)
Mounting Style :
SMD/SMT
Factory Lead Time :
30 Weeks
Surface Mount :
yes
Current - Continuous Drain (Id) @ 25°C :
130A Tc
Vgs (Max) :
±20V
Product Status :
Active
Rds On (Max) @ Id, Vgs :
9.1m Ω @ 65A, 10V
Continuous Drain Current (ID) :
130A
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Channel Mode :
Enhancement
Transistor Application :
SWITCHING
Terminal Position :
Single
RoHS Status :
ROHS3 Compliant
Transistor Element Material :
SILICON
RoHS :
Details
Number of Terminals :
2
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Additional Feature :
AVALANCHE RATED
FET Feature :
--
Drain-source On Resistance-Max :
0.0091Ohm
Minimum Operating Temperature :
- 55 C
Number of Elements :
1
Number of Terminations :
2
Drain to Source Voltage (Vdss) :
100V
Transistor Polarity :
N-Channel
Manufacturer :
IXYS
Power Dissipation-Max :
360W Tc
Product Type :
MOSFET
Mount :
Surface Mount
Case Connection :
DRAIN
Max Power Dissipation :
360 W
Number of Channels :
1 Channel
Product Category :
MOSFET
Terminal Form :
Gull wing
Reach Compliance Code :
not_compliant
Transistor Type :
1 N-Channel
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mounting Type :
Surface Mount
Maximum Operating Temperature :
+ 175 C
JESD-609 Code :
e3
Rds On Max :
9.1 mΩ
FET Type :
N-Channel
Supplier Device Package :
TO-263 (IXFA)
Drive Voltage (Max Rds On,Min Rds On) :
10V
Pin Count :
3
Base Product Number :
IXFA130
Input Capacitance (Ciss) (Max) @ Vds :
6600pF @ 25V
ECCN Code :
EAR99
Vgs(th) (Max) @ Id :
4.5V @ 1mA
Tradename :
HiPerFET
Avalanche Energy Rating (Eas) :
800 mJ
Operating Temperature :
-55°C~175°C TJ
Package :
Tube
Packaging :
Tube
Pbfree Code :
yes
Qualification Status :
Not Qualified
Series :
GigaMOS™, HiPerFET™, TrenchT2™
Operating Mode :
ENHANCEMENT MODE
Polarity/Channel Type :
N-Channel
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Power Dissipation (Max) :
360W (Tc)
Published :
2009
Configuration :
SINGLE WITH BUILT-IN DIODE
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Input Capacitance :
6.6 nF
Brand :
IXYS
Datasheets
IXFA130N10T2
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFA130N10T2 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:2, Number of Channels:1 Channel, Mounting Type:Surface Mount, Operating Temperature:-55°C~175°C TJ, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, IXFA130N10T2 pinout, IXFA130N10T2 datasheet PDF, IXFA130N10T2 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFA130N10T2 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFA130N10T2


N-Channel Tube 9.1m Ω @ 65A, 10V ±20V 6600pF @ 25V 130nC @ 10V 100V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXFA130N10T2 Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 800 mJ.A device's maximum input capacitance is 6600pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 130A for this device. Drain current refers to the capacity of the device to conduct continuous current.Its drain current is 130 A, and it is the maximum continuous current the device can conduct.Its maximum pulsed drain current is 300A, which is also its maximum rating peak drainage current.For normal operation, maintain the DS breakdown voltage above 100V.To operate this transistor, you need to apply a 100V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IXFA130N10T2 Features


the avalanche energy rating (Eas) is 800 mJ
a continuous drain current (ID) of 130A
based on its rated peak drain current 300A.
a 100V drain to source voltage (Vdss)


IXFA130N10T2 Applications


There are a lot of IXYS
IXFA130N10T2 applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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