IXFA130N10T2
- Mfr.Part #
- IXFA130N10T2
- Manufacturer
- Littelfuse
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 130A TO263
- Stock
- 17,314
- In Stock :
- 17,314
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Brand :
- IXYS
- Drain Current-Max (Abs) (ID) :
- 130 A
- Product Status :
- Active
- Series :
- GigaMOS™, HiPerFET™, TrenchT2™
- Rds On Max :
- 9.1 mΩ
- Maximum Operating Temperature :
- + 175 C
- RoHS Status :
- ROHS3 Compliant
- Pbfree Code :
- yes
- Polarity/Channel Type :
- N-Channel
- JESD-609 Code :
- e3
- Supplier Device Package :
- TO-263 (IXFA)
- Power Dissipation (Max) :
- 360W (Tc)
- Gate Charge (Qg) (Max) @ Vgs :
- 130nC @ 10V
- Package Shape :
- RECTANGULAR
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Feature :
- --
- DS Breakdown Voltage-Min :
- 100V
- Terminal Finish :
- Matte Tin (Sn)
- Channel Mode :
- Enhancement
- Pulsed Drain Current-Max (IDM) :
- 300A
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation-Max (Abs) :
- 360 W
- Reach Compliance Code :
- not_compliant
- Minimum Operating Temperature :
- - 55 C
- Number of Terminals :
- 2
- Surface Mount :
- yes
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Manufacturer :
- IXYS
- Factory Lead Time :
- 30 Weeks
- Terminal Position :
- Single
- Published :
- 2009
- Mount :
- Surface Mount
- Number of Elements :
- 1
- Number of Terminations :
- 2
- Avalanche Energy Rating (Eas) :
- 800 mJ
- Transistor Application :
- SWITCHING
- Package :
- Tube
- Product Type :
- MOSFET
- ECCN Code :
- EAR99
- Tradename :
- HiPerFET
- Transistor Type :
- 1 N-Channel
- Drain-source On Resistance-Max :
- 0.0091Ohm
- Transistor Element Material :
- SILICON
- Product Category :
- MOSFET
- Pin Count :
- 3
- Vgs (Max) :
- ±20V
- Number of Channels :
- 1 Channel
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Max Power Dissipation :
- 360 W
- RoHS :
- Details
- Input Capacitance (Ciss) (Max) @ Vds :
- 6600pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Qualification Status :
- Not Qualified
- Input Capacitance :
- 6.6 nF
- Power Dissipation-Max :
- 360W Tc
- Case Connection :
- DRAIN
- Transistor Polarity :
- N-Channel
- Packaging :
- Tube
- Current - Continuous Drain (Id) @ 25°C :
- 130A Tc
- Operating Temperature :
- -55°C~175°C TJ
- JESD-30 Code :
- R-PSSO-G2
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Rds On (Max) @ Id, Vgs :
- 9.1m Ω @ 65A, 10V
- Drain to Source Voltage (Vdss) :
- 100V
- Additional Feature :
- AVALANCHE RATED
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Mounting Style :
- SMD/SMT
- Vgs(th) (Max) @ Id :
- 4.5V @ 1mA
- FET Type :
- N-Channel
- Continuous Drain Current (ID) :
- 130A
- Terminal Form :
- Gull wing
- Base Product Number :
- IXFA130
- Datasheets
- IXFA130N10T2

N-Channel Tube 9.1m Ω @ 65A, 10V ±20V 6600pF @ 25V 130nC @ 10V 100V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXFA130N10T2 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 800 mJ.A device's maximum input capacitance is 6600pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 130A for this device. Drain current refers to the capacity of the device to conduct continuous current.Its drain current is 130 A, and it is the maximum continuous current the device can conduct.Its maximum pulsed drain current is 300A, which is also its maximum rating peak drainage current.For normal operation, maintain the DS breakdown voltage above 100V.To operate this transistor, you need to apply a 100V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IXFA130N10T2 Features
the avalanche energy rating (Eas) is 800 mJ
a continuous drain current (ID) of 130A
based on its rated peak drain current 300A.
a 100V drain to source voltage (Vdss)
IXFA130N10T2 Applications
There are a lot of IXYS
IXFA130N10T2 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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