IXFA130N10T2
- Mfr.Part #
- IXFA130N10T2
- Manufacturer
- Littelfuse
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 130A TO263
- Stock
- 17,314
- In Stock :
- 17,314
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Element Material :
- SILICON
- Package Shape :
- RECTANGULAR
- Rds On (Max) @ Id, Vgs :
- 9.1m Ω @ 65A, 10V
- Continuous Drain Current (ID) :
- 130A
- Mounting Type :
- Surface Mount
- Factory Lead Time :
- 30 Weeks
- Power Dissipation (Max) :
- 360W (Tc)
- Terminal Finish :
- Matte Tin (Sn)
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Rds On Max :
- 9.1 mΩ
- Drain Current-Max (Abs) (ID) :
- 130 A
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Drain-source On Resistance-Max :
- 0.0091Ohm
- Packaging :
- Tube
- Minimum Operating Temperature :
- - 55 C
- Polarity/Channel Type :
- N-Channel
- Qualification Status :
- Not Qualified
- Current - Continuous Drain (Id) @ 25°C :
- 130A Tc
- Max Power Dissipation :
- 360 W
- RoHS :
- Details
- Published :
- 2009
- Supplier Device Package :
- TO-263 (IXFA)
- Operating Mode :
- ENHANCEMENT MODE
- Maximum Operating Temperature :
- + 175 C
- Package :
- Tube
- Base Product Number :
- IXFA130
- Avalanche Energy Rating (Eas) :
- 800 mJ
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Vgs(th) (Max) @ Id :
- 4.5V @ 1mA
- Mount :
- Surface Mount
- Case Connection :
- DRAIN
- ECCN Code :
- EAR99
- Pin Count :
- 3
- Product Category :
- MOSFET
- Input Capacitance (Ciss) (Max) @ Vds :
- 6600pF @ 25V
- Terminal Position :
- Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Channels :
- 1 Channel
- Transistor Polarity :
- N-Channel
- DS Breakdown Voltage-Min :
- 100V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- yes
- Series :
- GigaMOS™, HiPerFET™, TrenchT2™
- Gate Charge (Qg) (Max) @ Vgs :
- 130nC @ 10V
- Reach Compliance Code :
- not_compliant
- Power Dissipation-Max :
- 360W Tc
- Product Type :
- MOSFET
- Additional Feature :
- AVALANCHE RATED
- Input Capacitance :
- 6.6 nF
- Tradename :
- HiPerFET
- Mounting Style :
- SMD/SMT
- Power Dissipation-Max (Abs) :
- 360 W
- Manufacturer :
- IXYS
- Surface Mount :
- yes
- Brand :
- IXYS
- Channel Mode :
- Enhancement
- JESD-609 Code :
- e3
- Terminal Form :
- Gull wing
- Vgs (Max) :
- ±20V
- FET Feature :
- --
- JESD-30 Code :
- R-PSSO-G2
- Number of Terminals :
- 2
- Pulsed Drain Current-Max (IDM) :
- 300A
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Product Status :
- Active
- Operating Temperature :
- -55°C~175°C TJ
- Transistor Type :
- 1 N-Channel
- Drain to Source Voltage (Vdss) :
- 100V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Transistor Application :
- SWITCHING
- FET Type :
- N-Channel
- Number of Terminations :
- 2
- Datasheets
- IXFA130N10T2

N-Channel Tube 9.1m Ω @ 65A, 10V ±20V 6600pF @ 25V 130nC @ 10V 100V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXFA130N10T2 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 800 mJ.A device's maximum input capacitance is 6600pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 130A for this device. Drain current refers to the capacity of the device to conduct continuous current.Its drain current is 130 A, and it is the maximum continuous current the device can conduct.Its maximum pulsed drain current is 300A, which is also its maximum rating peak drainage current.For normal operation, maintain the DS breakdown voltage above 100V.To operate this transistor, you need to apply a 100V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IXFA130N10T2 Features
the avalanche energy rating (Eas) is 800 mJ
a continuous drain current (ID) of 130A
based on its rated peak drain current 300A.
a 100V drain to source voltage (Vdss)
IXFA130N10T2 Applications
There are a lot of IXYS
IXFA130N10T2 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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