IXFA130N10T2

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Surface Mount

Transistor Type :

1 N-Channel

Rds On (Max) @ Id, Vgs :

9.1m Ω @ 65A, 10V

Qualification Status :

Not Qualified

Product Status :

Active

Case Connection :

DRAIN

Transistor Polarity :

N-Channel

Avalanche Energy Rating (Eas) :

800 mJ

Mounting Style :

SMD/SMT

Power Dissipation-Max :

360W Tc

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~175°C TJ

Minimum Operating Temperature :

- 55 C

Terminal Form :

Gull wing

Factory Lead Time :

30 Weeks

Base Product Number :

IXFA130

Pin Count :

3

Transistor Application :

SWITCHING

Manufacturer :

IXYS

Product Category :

MOSFET

Terminal Position :

Single

Published :

2009

Package Shape :

RECTANGULAR

Product Type :

MOSFET

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Transistor Element Material :

SILICON

Number of Channels :

1 Channel

Current - Continuous Drain (Id) @ 25°C :

130A Tc

Input Capacitance (Ciss) (Max) @ Vds :

6600pF @ 25V

Drain-source On Resistance-Max :

0.0091Ohm

Supplier Device Package :

TO-263 (IXFA)

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Reach Compliance Code :

not_compliant

RoHS :

Details

Brand :

IXYS

Package :

Tube

Number of Terminations :

2

Continuous Drain Current (ID) :

130A

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Feature :

--

Input Capacitance :

6.6 nF

Channel Mode :

Enhancement

Terminal Finish :

Matte Tin (Sn)

Power Dissipation (Max) :

360W (Tc)

Number of Elements :

1

JESD-30 Code :

R-PSSO-G2

Number of Terminals :

2

FET Type :

N-Channel

Pbfree Code :

yes

Vgs(th) (Max) @ Id :

4.5V @ 1mA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Additional Feature :

AVALANCHE RATED

Maximum Operating Temperature :

+ 175 C

Drain Current-Max (Abs) (ID) :

130 A

Pulsed Drain Current-Max (IDM) :

300A

Drain to Source Voltage (Vdss) :

100V

Packaging :

Tube

Polarity/Channel Type :

N-Channel

Rds On Max :

9.1 mΩ

Gate Charge (Qg) (Max) @ Vgs :

130nC @ 10V

Max Power Dissipation :

360 W

JESD-609 Code :

e3

Configuration :

SINGLE WITH BUILT-IN DIODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Tradename :

HiPerFET

Series :

GigaMOS™, HiPerFET™, TrenchT2™

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max (Abs) :

360 W

DS Breakdown Voltage-Min :

100V

Surface Mount :

yes

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)