IXFA130N10T2

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Mfr.Part #
IXFA130N10T2
Manufacturer
Littelfuse
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 100V 130A TO263
Stock
17,314
In Stock :
17,314

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
DS Breakdown Voltage-Min :
100V
Surface Mount :
yes
ECCN Code :
EAR99
Transistor Element Material :
SILICON
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Polarity :
N-Channel
Rds On Max :
9.1 mΩ
Transistor Type :
1 N-Channel
Power Dissipation-Max (Abs) :
360 W
RoHS Status :
ROHS3 Compliant
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Tradename :
HiPerFET
Input Capacitance (Ciss) (Max) @ Vds :
6600pF @ 25V
Packaging :
Tube
Drain Current-Max (Abs) (ID) :
130 A
Factory Lead Time :
30 Weeks
Rds On (Max) @ Id, Vgs :
9.1m Ω @ 65A, 10V
Avalanche Energy Rating (Eas) :
800 mJ
Case Connection :
DRAIN
FET Feature :
--
Configuration :
SINGLE WITH BUILT-IN DIODE
Current - Continuous Drain (Id) @ 25°C :
130A Tc
Mount :
Surface Mount
Number of Terminals :
2
Number of Terminations :
2
Product Category :
MOSFET
Additional Feature :
AVALANCHE RATED
Package Shape :
RECTANGULAR
Pbfree Code :
yes
Pin Count :
3
Qualification Status :
Not Qualified
Mounting Style :
SMD/SMT
RoHS :
Details
JESD-609 Code :
e3
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Terminal Position :
Single
Power Dissipation (Max) :
360W (Tc)
Operating Mode :
ENHANCEMENT MODE
JESD-30 Code :
R-PSSO-G2
Vgs(th) (Max) @ Id :
4.5V @ 1mA
Brand :
IXYS
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Pulsed Drain Current-Max (IDM) :
300A
Mounting Type :
Surface Mount
Number of Channels :
1 Channel
Manufacturer :
IXYS
Number of Elements :
1
Max Power Dissipation :
360 W
Supplier Device Package :
TO-263 (IXFA)
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Gate Charge (Qg) (Max) @ Vgs :
130nC @ 10V
Transistor Application :
SWITCHING
Polarity/Channel Type :
N-Channel
Base Product Number :
IXFA130
Reach Compliance Code :
not_compliant
Input Capacitance :
6.6 nF
FET Type :
N-Channel
Drain to Source Voltage (Vdss) :
100V
Power Dissipation-Max :
360W Tc
Continuous Drain Current (ID) :
130A
Channel Mode :
Enhancement
Package :
Tube
Vgs (Max) :
±20V
Minimum Operating Temperature :
- 55 C
Published :
2009
Drive Voltage (Max Rds On,Min Rds On) :
10V
Product Type :
MOSFET
Terminal Form :
Gull wing
Series :
GigaMOS™, HiPerFET™, TrenchT2™
Drain-source On Resistance-Max :
0.0091Ohm
Terminal Finish :
Matte Tin (Sn)
Maximum Operating Temperature :
+ 175 C
Product Status :
Active
Operating Temperature :
-55°C~175°C TJ
Datasheets
IXFA130N10T2
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFA130N10T2 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Number of Terminations:2, Mounting Type:Surface Mount, Number of Channels:1 Channel, Operating Temperature:-55°C~175°C TJ, IXFA130N10T2 pinout, IXFA130N10T2 datasheet PDF, IXFA130N10T2 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFA130N10T2 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFA130N10T2


N-Channel Tube 9.1m Ω @ 65A, 10V ±20V 6600pF @ 25V 130nC @ 10V 100V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXFA130N10T2 Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 800 mJ.A device's maximum input capacitance is 6600pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 130A for this device. Drain current refers to the capacity of the device to conduct continuous current.Its drain current is 130 A, and it is the maximum continuous current the device can conduct.Its maximum pulsed drain current is 300A, which is also its maximum rating peak drainage current.For normal operation, maintain the DS breakdown voltage above 100V.To operate this transistor, you need to apply a 100V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IXFA130N10T2 Features


the avalanche energy rating (Eas) is 800 mJ
a continuous drain current (ID) of 130A
based on its rated peak drain current 300A.
a 100V drain to source voltage (Vdss)


IXFA130N10T2 Applications


There are a lot of IXYS
IXFA130N10T2 applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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