IXFA130N10T2
- Mfr.Part #
- IXFA130N10T2
- Manufacturer
- Littelfuse
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 130A TO263
- Stock
- 17,314
- In Stock :
- 17,314
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain Current-Max (Abs) (ID) :
- 130 A
- Series :
- GigaMOS™, HiPerFET™, TrenchT2™
- Drain-source On Resistance-Max :
- 0.0091Ohm
- Mounting Style :
- SMD/SMT
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain to Source Voltage (Vdss) :
- 100V
- Input Capacitance :
- 6.6 nF
- Operating Temperature :
- -55°C~175°C TJ
- Number of Channels :
- 1 Channel
- Power Dissipation (Max) :
- 360W (Tc)
- Minimum Operating Temperature :
- - 55 C
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Surface Mount
- Terminal Position :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Additional Feature :
- AVALANCHE RATED
- Input Capacitance (Ciss) (Max) @ Vds :
- 6600pF @ 25V
- JESD-609 Code :
- e3
- Reach Compliance Code :
- not_compliant
- Transistor Application :
- SWITCHING
- Transistor Polarity :
- N-Channel
- Pin Count :
- 3
- Brand :
- IXYS
- Number of Terminals :
- 2
- JESD-30 Code :
- R-PSSO-G2
- FET Feature :
- --
- Vgs(th) (Max) @ Id :
- 4.5V @ 1mA
- Supplier Device Package :
- TO-263 (IXFA)
- Number of Terminations :
- 2
- Continuous Drain Current (ID) :
- 130A
- Product Category :
- MOSFET
- Terminal Finish :
- Matte Tin (Sn)
- RoHS :
- Details
- Package Shape :
- RECTANGULAR
- ECCN Code :
- EAR99
- Terminal Form :
- Gull wing
- Polarity/Channel Type :
- N-Channel
- Max Power Dissipation :
- 360 W
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Tradename :
- HiPerFET
- Power Dissipation-Max :
- 360W Tc
- Case Connection :
- DRAIN
- Avalanche Energy Rating (Eas) :
- 800 mJ
- DS Breakdown Voltage-Min :
- 100V
- Transistor Type :
- 1 N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 130A Tc
- Rds On Max :
- 9.1 mΩ
- Vgs (Max) :
- ±20V
- Transistor Element Material :
- SILICON
- Rds On (Max) @ Id, Vgs :
- 9.1m Ω @ 65A, 10V
- Package :
- Tube
- Product Type :
- MOSFET
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Surface Mount :
- yes
- Number of Elements :
- 1
- Operating Mode :
- ENHANCEMENT MODE
- Channel Mode :
- Enhancement
- Power Dissipation-Max (Abs) :
- 360 W
- Gate Charge (Qg) (Max) @ Vgs :
- 130nC @ 10V
- Maximum Operating Temperature :
- + 175 C
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Mount :
- Surface Mount
- Packaging :
- Tube
- Base Product Number :
- IXFA130
- Pulsed Drain Current-Max (IDM) :
- 300A
- Product Status :
- Active
- Factory Lead Time :
- 30 Weeks
- FET Type :
- N-Channel
- Qualification Status :
- Not Qualified
- Published :
- 2009
- Manufacturer :
- IXYS
- Pbfree Code :
- yes
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Datasheets
- IXFA130N10T2

N-Channel Tube 9.1m Ω @ 65A, 10V ±20V 6600pF @ 25V 130nC @ 10V 100V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXFA130N10T2 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 800 mJ.A device's maximum input capacitance is 6600pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 130A for this device. Drain current refers to the capacity of the device to conduct continuous current.Its drain current is 130 A, and it is the maximum continuous current the device can conduct.Its maximum pulsed drain current is 300A, which is also its maximum rating peak drainage current.For normal operation, maintain the DS breakdown voltage above 100V.To operate this transistor, you need to apply a 100V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IXFA130N10T2 Features
the avalanche energy rating (Eas) is 800 mJ
a continuous drain current (ID) of 130A
based on its rated peak drain current 300A.
a 100V drain to source voltage (Vdss)
IXFA130N10T2 Applications
There are a lot of IXYS
IXFA130N10T2 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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