IXFA130N10T

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Mfr.Part #
IXFA130N10T
Manufacturer
Littelfuse
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 100V 130A TO263
Stock
25,548
In Stock :
25,548

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
RoHS :
Compliant
RoHS Status :
ROHS3 Compliant
Gate Charge (Qg) (Max) @ Vgs :
104nC @ 10V
Number of Terminals :
2
Number of Elements :
1
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Qualification Status :
Not Qualified
Mounting Type :
Surface Mount
Product Status :
Active
Operating Temperature :
-55°C~175°C TJ
Pbfree Code :
yes
Drain-source On Resistance-Max :
0.0091Ohm
Number of Terminations :
2
Additional Feature :
AVALANCHE RATED, ULTRA-LOW RESISTANCE
Terminal Position :
Single
Operating Mode :
ENHANCEMENT MODE
Transistor Element Material :
SILICON
Mount :
Surface Mount
Base Product Number :
IXFA130
Drain to Source Voltage (Vdss) :
100V
Manufacturer :
IXYS
Current - Continuous Drain (Id) @ 25°C :
130A Tc
JEDEC-95 Code :
TO-263AB
DS Breakdown Voltage-Min :
100V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
FET Type :
N-Channel
JESD-609 Code :
e3
Drive Voltage (Max Rds On,Min Rds On) :
10V
Power Dissipation (Max) :
360W (Tc)
Series :
TrenchMV™
Reach Compliance Code :
not_compliant
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Surface Mount :
yes
Max Power Dissipation :
360 W
Pulsed Drain Current-Max (IDM) :
350A
Published :
2008
JESD-30 Code :
R-PSSO-G2
Vgs(th) (Max) @ Id :
4.5V @ 1mA
Continuous Drain Current (ID) :
130A
Input Capacitance :
5.08 nF
Product Category :
MOSFET
Configuration :
SINGLE WITH BUILT-IN DIODE
Rds On (Max) @ Id, Vgs :
9.1m Ω @ 25A, 10V
Terminal Form :
Gull wing
Power Dissipation-Max :
360W Tc
Rds On Max :
9.1 mΩ
Power Dissipation-Max (Abs) :
360 W
Mounting Style :
SMD/SMT
Brand :
IXYS
Packaging :
Tube
Number of Channels :
1 Channel
Case Connection :
DRAIN
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FET Feature :
--
Package Shape :
RECTANGULAR
ECCN Code :
EAR99
Input Capacitance (Ciss) (Max) @ Vds :
5080pF @ 25V
Package :
Tube
Transistor Type :
1 N-Channel
Product Type :
MOSFET
Tradename :
HiPerFET
Terminal Finish :
Matte Tin (Sn)
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Transistor Application :
SWITCHING
Transistor Polarity :
N-Channel
Supplier Device Package :
TO-263 (IXFA)
Vgs (Max) :
--
Drain Current-Max (Abs) (ID) :
130 A
Pin Count :
4
Avalanche Energy Rating (Eas) :
750 mJ
Polarity/Channel Type :
N-Channel
Datasheets
IXFA130N10T
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFA130N10T from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Operating Temperature:-55°C~175°C TJ, Number of Terminations:2, Number of Channels:1 Channel, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, IXFA130N10T pinout, IXFA130N10T datasheet PDF, IXFA130N10T amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFA130N10T ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFA130N10T


N-Channel Tube 9.1m Ω @ 25A, 10V -- 5080pF @ 25V 104nC @ 10V 100V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXFA130N10T Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 750 mJ.A device's maximal input capacitance is 5080pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 130A, which represents the maximum continuous current it can conduct.In this device, the drain current is 130 A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 350A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 100V.This transistor requires a 100V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IXFA130N10T Features


the avalanche energy rating (Eas) is 750 mJ
a continuous drain current (ID) of 130A
based on its rated peak drain current 350A.
a 100V drain to source voltage (Vdss)


IXFA130N10T Applications


There are a lot of IXYS
IXFA130N10T applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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