IXFA130N10T

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Mfr.Part #
IXFA130N10T
Manufacturer
Littelfuse
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 100V 130A TO263
Stock
25,548
In Stock :
25,548

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Product Status :
Active
Pbfree Code :
yes
Pin Count :
4
Configuration :
SINGLE WITH BUILT-IN DIODE
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Base Product Number :
IXFA130
FET Type :
N-Channel
Transistor Element Material :
SILICON
Number of Terminals :
2
Terminal Finish :
Matte Tin (Sn)
DS Breakdown Voltage-Min :
100V
Number of Channels :
1 Channel
RoHS :
Compliant
Power Dissipation (Max) :
360W (Tc)
Mounting Type :
Surface Mount
JEDEC-95 Code :
TO-263AB
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Application :
SWITCHING
Vgs (Max) :
--
Packaging :
Tube
JESD-609 Code :
e3
Number of Elements :
1
Drain-source On Resistance-Max :
0.0091Ohm
Additional Feature :
AVALANCHE RATED, ULTRA-LOW RESISTANCE
Max Power Dissipation :
360 W
Gate Charge (Qg) (Max) @ Vgs :
104nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
5080pF @ 25V
Avalanche Energy Rating (Eas) :
750 mJ
Vgs(th) (Max) @ Id :
4.5V @ 1mA
Case Connection :
DRAIN
Supplier Device Package :
TO-263 (IXFA)
Operating Mode :
ENHANCEMENT MODE
Tradename :
HiPerFET
Rds On Max :
9.1 mΩ
Rds On (Max) @ Id, Vgs :
9.1m Ω @ 25A, 10V
Brand :
IXYS
JESD-30 Code :
R-PSSO-G2
Mounting Style :
SMD/SMT
Manufacturer :
IXYS
Power Dissipation-Max (Abs) :
360 W
Transistor Type :
1 N-Channel
Transistor Polarity :
N-Channel
Product Category :
MOSFET
Drive Voltage (Max Rds On,Min Rds On) :
10V
Polarity/Channel Type :
N-Channel
Pulsed Drain Current-Max (IDM) :
350A
Terminal Form :
Gull wing
ECCN Code :
EAR99
Continuous Drain Current (ID) :
130A
Operating Temperature :
-55°C~175°C TJ
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drain to Source Voltage (Vdss) :
100V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max :
360W Tc
Input Capacitance :
5.08 nF
Surface Mount :
yes
FET Feature :
--
Number of Terminations :
2
Published :
2008
Drain Current-Max (Abs) (ID) :
130 A
Series :
TrenchMV™
Qualification Status :
Not Qualified
Terminal Position :
Single
Current - Continuous Drain (Id) @ 25°C :
130A Tc
RoHS Status :
ROHS3 Compliant
Package Shape :
RECTANGULAR
Package :
Tube
Product Type :
MOSFET
Mount :
Surface Mount
Reach Compliance Code :
not_compliant
Datasheets
IXFA130N10T
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFA130N10T from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Mounting Type:Surface Mount, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Operating Temperature:-55°C~175°C TJ, Number of Terminations:2, IXFA130N10T pinout, IXFA130N10T datasheet PDF, IXFA130N10T amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFA130N10T ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFA130N10T


N-Channel Tube 9.1m Ω @ 25A, 10V -- 5080pF @ 25V 104nC @ 10V 100V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXFA130N10T Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 750 mJ.A device's maximal input capacitance is 5080pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 130A, which represents the maximum continuous current it can conduct.In this device, the drain current is 130 A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 350A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 100V.This transistor requires a 100V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IXFA130N10T Features


the avalanche energy rating (Eas) is 750 mJ
a continuous drain current (ID) of 130A
based on its rated peak drain current 350A.
a 100V drain to source voltage (Vdss)


IXFA130N10T Applications


There are a lot of IXYS
IXFA130N10T applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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