IXFA102N15T

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Supplier Device Package :

TO-263 (IXFA)

Power Dissipation (Max) :

455W (Tc)

Terminal Finish :

PURE TIN

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

87nC @ 10V

Input Capacitance :

5.22 nF

Case Connection :

DRAIN

Pbfree Code :

yes

FET Feature :

--

Reach Compliance Code :

Unknown

JESD-609 Code :

e3

Mounting Type :

Surface Mount

FET Type :

N-Channel

Tradename :

HiPerFET

Vgs(th) (Max) @ Id :

5V @ 1mA

Qualification Status :

Not Qualified

Avalanche Energy Rating (Eas) :

750 mJ

Brand :

IXYS

Transistor Application :

SWITCHING

Number of Channels :

1 Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min :

150V

Drain-source On Resistance-Max :

0.018Ohm

Transistor Polarity :

N-Channel

Operating Temperature :

-55°C~175°C TJ

Max Power Dissipation :

455 W

Transistor Type :

1 N-Channel

Series :

HiPerFET™

Current - Continuous Drain (Id) @ 25°C :

102A Tc

Product Category :

MOSFET

Mount :

Surface Mount

Power Dissipation-Max :

455W Tc

Base Product Number :

IXFA102

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Elements :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Continuous Drain Current (ID) :

102A

Packaging :

Tube

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

5220pF @ 25V

Mounting Style :

SMD/SMT

Transistor Element Material :

SILICON

Manufacturer :

IXYS

JEDEC-95 Code :

TO-263AA

Product Status :

Active

Pulsed Drain Current-Max (IDM) :

300A

Pin Count :

4

Package :

Tube

Vgs (Max) :

±20V

Terminal Form :

Gull wing

Additional Feature :

AVALANCHE RATED

Drain to Source Voltage (Vdss) :

150V

Published :

2009

Number of Terminations :

2

JESD-30 Code :

R-PSSO-G2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Product Type :

MOSFET

Rds On Max :

18 mΩ

RoHS :

Compliant

Rds On (Max) @ Id, Vgs :

18m Ω @ 500mA, 10V

Terminal Position :

Single