IXFA10N60P
- Mfr.Part #
- IXFA10N60P
- Manufacturer
- Littelfuse
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 10A TO263
- Stock
- 35,742
- In Stock :
- 35,742
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Polarity/Channel Type :
- N-Channel
- Terminal Form :
- Gull wing
- Factory Lead Time :
- 30 Weeks
- Reach Compliance Code :
- not_compliant
- Pulsed Drain Current-Max (IDM) :
- 25A
- Case Connection :
- DRAIN
- Mount :
- Surface Mount
- Pin Count :
- 4
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Fall Time (Typ) :
- 21 ns
- JESD-609 Code :
- e3
- Rds On (Max) @ Id, Vgs :
- 740m Ω @ 5A, 10V
- Number of Elements :
- 1
- Input Capacitance (Ciss) (Max) @ Vds :
- 1610pF @ 25V
- Power Dissipation (Max) :
- 200W (Tc)
- Current Rating :
- 10A
- Packaging :
- Tube
- Mounting Style :
- SMD/SMT
- FET Type :
- N-Channel
- Height :
- 4.5 mm
- Published :
- 2010
- RoHS :
- Details
- Length :
- 9.9 mm
- Additional Feature :
- AVALANCHE RATED
- Drain Current-Max (Abs) (ID) :
- 10 A
- Transistor Application :
- SWITCHING
- Package :
- Tube
- Drain to Source Breakdown Voltage :
- 600V
- Vgs(th) (Max) @ Id :
- 5.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs :
- 32nC @ 10V
- Width :
- 9.2 mm
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- RoHS Status :
- ROHS3 Compliant
- Element Configuration :
- Single
- Power Dissipation-Max :
- 200W Tc
- Avalanche Energy Rating (Eas) :
- 500 mJ
- Package Shape :
- RECTANGULAR
- Supplier Device Package :
- TO-263 (IXFA)
- Pbfree Code :
- yes
- Product Status :
- Active
- Configuration :
- Single
- Lead Free :
- Lead Free
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Voltage - Rated DC :
- 600V
- Transistor Type :
- 1 N-Channel
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Transistor Element Material :
- SILICON
- JEDEC-95 Code :
- TO-263AB
- Brand :
- IXYS
- Operating Temperature :
- -55°C~150°C TJ
- FET Feature :
- --
- Series :
- HiPerFET™, PolarP2™
- Number of Terminations :
- 2
- Number of Terminals :
- 2
- Product Type :
- MOSFET
- Rise Time :
- 27ns
- Manufacturer :
- IXYS
- Power Dissipation-Max (Abs) :
- 200 W
- Number of Channels :
- 1 Channel
- Base Product Number :
- IXFA10
- Qualification Status :
- Not Qualified
- JESD-30 Code :
- R-PSSO-G2
- Operating Mode :
- ENHANCEMENT MODE
- Vgs (Max) :
- ±30V
- Product Category :
- MOSFET
- Gate to Source Voltage (Vgs) :
- 30V
- Tradename :
- HiPerFET
- Drain to Source Voltage (Vdss) :
- 600V
- Surface Mount :
- yes
- Maximum Operating Temperature :
- + 150 C
- Channel Mode :
- Enhancement
- Mounting Type :
- Surface Mount
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Current - Continuous Drain (Id) @ 25°C :
- 10A Tc
- Transistor Polarity :
- N-Channel
- Turn-Off Delay Time :
- 65 ns
- Terminal Finish :
- Matte Tin (Sn)
- Minimum Operating Temperature :
- - 55 C
- Drain-source On Resistance-Max :
- 0.74Ohm
- Terminal Position :
- Single
- Continuous Drain Current (ID) :
- 10A
- Power Dissipation :
- 200W
- DS Breakdown Voltage-Min :
- 600 V
- Datasheets
- IXFA10N60P

N-Channel Tube 740m Ω @ 5A, 10V ±30V 1610pF @ 25V 32nC @ 10V 600V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXFA10N60P Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 500 mJ.A device's maximal input capacitance is 1610pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 10A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 600V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 10 A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 65 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 25A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 600 V.This transistor requires a 600V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXFA10N60P Features
the avalanche energy rating (Eas) is 500 mJ
a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 65 ns
based on its rated peak drain current 25A.
a 600V drain to source voltage (Vdss)
IXFA10N60P Applications
There are a lot of IXYS
IXFA10N60P applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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