IXFA10N60P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Height :

4.5 mm

Package Shape :

RECTANGULAR

Input Capacitance (Ciss) (Max) @ Vds :

1610pF @ 25V

Base Product Number :

IXFA10

Operating Temperature :

-55°C~150°C TJ

Number of Terminals :

2

Channel Mode :

Enhancement

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn-Off Delay Time :

65 ns

Mount :

Surface Mount

Reach Compliance Code :

not_compliant

Drain to Source Voltage (Vdss) :

600V

Supplier Device Package :

TO-263 (IXFA)

Power Dissipation-Max (Abs) :

200 W

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 10V

Published :

2010

Voltage - Rated DC :

600V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Rds On (Max) @ Id, Vgs :

740m Ω @ 5A, 10V

Drain Current-Max (Abs) (ID) :

10 A

Drain-source On Resistance-Max :

0.74Ohm

Element Configuration :

Single

Vgs(th) (Max) @ Id :

5.5V @ 1mA

Width :

9.2 mm

Mounting Type :

Surface Mount

Rise Time :

27ns

FET Type :

N-Channel

Polarity/Channel Type :

N-Channel

JESD-609 Code :

e3

Lead Free :

Lead Free

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

10A Tc

JEDEC-95 Code :

TO-263AB

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Maximum Operating Temperature :

+ 150 C

Number of Elements :

1

Minimum Operating Temperature :

- 55 C

Manufacturer :

IXYS

Series :

HiPerFET™, PolarP2™

Transistor Polarity :

N-Channel

JESD-30 Code :

R-PSSO-G2

Drain to Source Breakdown Voltage :

600V

Case Connection :

DRAIN

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Avalanche Energy Rating (Eas) :

500 mJ

DS Breakdown Voltage-Min :

600 V

Number of Channels :

1 Channel

Product Status :

Active

Package :

Tube

Power Dissipation :

200W

Qualification Status :

Not Qualified

Transistor Application :

SWITCHING

Length :

9.9 mm

Product Category :

MOSFET

Pbfree Code :

yes

Terminal Position :

Single

Power Dissipation (Max) :

200W (Tc)

Pin Count :

4

Tradename :

HiPerFET

Number of Terminations :

2

Terminal Finish :

Matte Tin (Sn)

Surface Mount :

yes

Gate to Source Voltage (Vgs) :

30V

Pulsed Drain Current-Max (IDM) :

25A

Configuration :

Single

Continuous Drain Current (ID) :

10A

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Power Dissipation-Max :

200W Tc

Current Rating :

10A

RoHS :

Details

Additional Feature :

AVALANCHE RATED

Fall Time (Typ) :

21 ns

Vgs (Max) :

±30V

Product Type :

MOSFET

Packaging :

Tube

Brand :

IXYS

Mounting Style :

SMD/SMT

Transistor Type :

1 N-Channel

Factory Lead Time :

30 Weeks

Terminal Form :

Gull wing

FET Feature :

--

Transistor Element Material :

SILICON