IXFA10N60P
- Mfr.Part #
- IXFA10N60P
- Manufacturer
- Littelfuse
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 10A TO263
- Stock
- 35,742
- In Stock :
- 35,742
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Base Product Number :
- IXFA10
- JESD-30 Code :
- R-PSSO-G2
- Pbfree Code :
- yes
- Case Connection :
- DRAIN
- Channel Mode :
- Enhancement
- Power Dissipation :
- 200W
- Power Dissipation-Max :
- 200W Tc
- Drain to Source Voltage (Vdss) :
- 600V
- Pin Count :
- 4
- Supplier Device Package :
- TO-263 (IXFA)
- Operating Mode :
- ENHANCEMENT MODE
- RoHS :
- Details
- Surface Mount :
- yes
- Rise Time :
- 27ns
- Packaging :
- Tube
- Pulsed Drain Current-Max (IDM) :
- 25A
- Turn-Off Delay Time :
- 65 ns
- Length :
- 9.9 mm
- Drain Current-Max (Abs) (ID) :
- 10 A
- Continuous Drain Current (ID) :
- 10A
- Manufacturer :
- IXYS
- Width :
- 9.2 mm
- Gate to Source Voltage (Vgs) :
- 30V
- Additional Feature :
- AVALANCHE RATED
- Number of Terminals :
- 2
- Mounting Style :
- SMD/SMT
- Terminal Finish :
- Matte Tin (Sn)
- Fall Time (Typ) :
- 21 ns
- Height :
- 4.5 mm
- Current - Continuous Drain (Id) @ 25°C :
- 10A Tc
- Voltage - Rated DC :
- 600V
- Product Category :
- MOSFET
- Factory Lead Time :
- 30 Weeks
- Configuration :
- Single
- Minimum Operating Temperature :
- - 55 C
- Polarity/Channel Type :
- N-Channel
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Drain to Source Breakdown Voltage :
- 600V
- Number of Channels :
- 1 Channel
- Power Dissipation (Max) :
- 200W (Tc)
- Number of Terminations :
- 2
- Brand :
- IXYS
- Avalanche Energy Rating (Eas) :
- 500 mJ
- Product Status :
- Active
- Tradename :
- HiPerFET
- Drain-source On Resistance-Max :
- 0.74Ohm
- Gate Charge (Qg) (Max) @ Vgs :
- 32nC @ 10V
- FET Type :
- N-Channel
- Vgs(th) (Max) @ Id :
- 5.5V @ 1mA
- Terminal Form :
- Gull wing
- Element Configuration :
- Single
- Maximum Operating Temperature :
- + 150 C
- Mounting Type :
- Surface Mount
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- RoHS Status :
- ROHS3 Compliant
- JEDEC-95 Code :
- TO-263AB
- Transistor Application :
- SWITCHING
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Input Capacitance (Ciss) (Max) @ Vds :
- 1610pF @ 25V
- Package Shape :
- RECTANGULAR
- Package :
- Tube
- Lead Free :
- Lead Free
- Number of Elements :
- 1
- DS Breakdown Voltage-Min :
- 600 V
- Operating Temperature :
- -55°C~150°C TJ
- Qualification Status :
- Not Qualified
- JESD-609 Code :
- e3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Rds On (Max) @ Id, Vgs :
- 740m Ω @ 5A, 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Surface Mount
- Reach Compliance Code :
- not_compliant
- Power Dissipation-Max (Abs) :
- 200 W
- Transistor Type :
- 1 N-Channel
- Transistor Element Material :
- SILICON
- Product Type :
- MOSFET
- Published :
- 2010
- Current Rating :
- 10A
- Terminal Position :
- Single
- Vgs (Max) :
- ±30V
- Transistor Polarity :
- N-Channel
- Series :
- HiPerFET™, PolarP2™
- FET Feature :
- --
- Datasheets
- IXFA10N60P

N-Channel Tube 740m Ω @ 5A, 10V ±30V 1610pF @ 25V 32nC @ 10V 600V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXFA10N60P Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 500 mJ.A device's maximal input capacitance is 1610pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 10A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 600V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 10 A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 65 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 25A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 600 V.This transistor requires a 600V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXFA10N60P Features
the avalanche energy rating (Eas) is 500 mJ
a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 65 ns
based on its rated peak drain current 25A.
a 600V drain to source voltage (Vdss)
IXFA10N60P Applications
There are a lot of IXYS
IXFA10N60P applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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