IXFA10N60P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Surface Mount

Published :

2010

Product Status :

Active

Qualification Status :

Not Qualified

Terminal Finish :

Matte Tin (Sn)

Element Configuration :

Single

Maximum Operating Temperature :

+ 150 C

Number of Terminals :

2

Width :

9.2 mm

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 10V

Avalanche Energy Rating (Eas) :

500 mJ

Terminal Form :

Gull wing

Power Dissipation (Max) :

200W (Tc)

Gate to Source Voltage (Vgs) :

30V

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

5.5V @ 1mA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package :

Tube

Transistor Type :

1 N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

740m Ω @ 5A, 10V

Drain to Source Breakdown Voltage :

600V

Power Dissipation :

200W

Supplier Device Package :

TO-263 (IXFA)

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Operating Temperature :

-55°C~150°C TJ

JEDEC-95 Code :

TO-263AB

Pin Count :

4

FET Feature :

--

JESD-30 Code :

R-PSSO-G2

Pbfree Code :

yes

Mounting Style :

SMD/SMT

Base Product Number :

IXFA10

Product Type :

MOSFET

Packaging :

Tube

Series :

HiPerFET™, PolarP2™

DS Breakdown Voltage-Min :

600 V

Number of Channels :

1 Channel

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

25A

Current - Continuous Drain (Id) @ 25°C :

10A Tc

RoHS :

Details

Package Shape :

RECTANGULAR

Case Connection :

DRAIN

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Rise Time :

27ns

Channel Mode :

Enhancement

RoHS Status :

ROHS3 Compliant

Current Rating :

10A

FET Type :

N-Channel

Height :

4.5 mm

Turn-Off Delay Time :

65 ns

Transistor Application :

SWITCHING

Length :

9.9 mm

Product Category :

MOSFET

Mount :

Surface Mount

Vgs (Max) :

±30V

Fall Time (Typ) :

21 ns

Drain Current-Max (Abs) (ID) :

10 A

Polarity/Channel Type :

N-Channel

Power Dissipation-Max (Abs) :

200 W

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Configuration :

Single

Transistor Polarity :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

1610pF @ 25V

Drain-source On Resistance-Max :

0.74Ohm

Surface Mount :

yes

Drain to Source Voltage (Vdss) :

600V

Number of Elements :

1

Factory Lead Time :

30 Weeks

Manufacturer :

IXYS

Continuous Drain Current (ID) :

10A

JESD-609 Code :

e3

Additional Feature :

AVALANCHE RATED

Tradename :

HiPerFET

Terminal Position :

Single

Voltage - Rated DC :

600V

Power Dissipation-Max :

200W Tc

Reach Compliance Code :

not_compliant

Brand :

IXYS

Minimum Operating Temperature :

- 55 C

Transistor Element Material :

SILICON

Number of Terminations :

2