IXFA10N60P

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Mfr.Part #
IXFA10N60P
Manufacturer
Littelfuse
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 600V 10A TO263
Stock
35,742
In Stock :
35,742

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Vgs (Max) :
±30V
RoHS :
Details
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
RoHS Status :
ROHS3 Compliant
Transistor Element Material :
SILICON
Element Configuration :
Single
Series :
HiPerFET™, PolarP2™
Vgs(th) (Max) @ Id :
5.5V @ 1mA
Mount :
Surface Mount
JESD-30 Code :
R-PSSO-G2
Power Dissipation (Max) :
200W (Tc)
Supplier Device Package :
TO-263 (IXFA)
Product Category :
MOSFET
Gate to Source Voltage (Vgs) :
30V
Case Connection :
DRAIN
Transistor Polarity :
N-Channel
Product Type :
MOSFET
Additional Feature :
AVALANCHE RATED
Pbfree Code :
yes
Surface Mount :
yes
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Number of Terminals :
2
Operating Mode :
ENHANCEMENT MODE
Power Dissipation :
200W
Channel Mode :
Enhancement
Length :
9.9 mm
Terminal Form :
Gull wing
Tradename :
HiPerFET
Continuous Drain Current (ID) :
10A
Power Dissipation-Max :
200W Tc
FET Technology :
METAL-OXIDE SEMICONDUCTOR
FET Type :
N-Channel
JESD-609 Code :
e3
Gate Charge (Qg) (Max) @ Vgs :
32nC @ 10V
Fall Time (Typ) :
21 ns
Maximum Operating Temperature :
+ 150 C
Factory Lead Time :
30 Weeks
Polarity/Channel Type :
N-Channel
Drive Voltage (Max Rds On,Min Rds On) :
10V
Manufacturer :
IXYS
Turn-Off Delay Time :
65 ns
FET Feature :
--
Pulsed Drain Current-Max (IDM) :
25A
Number of Terminations :
2
Number of Elements :
1
Rise Time :
27ns
Mounting Type :
Surface Mount
Voltage - Rated DC :
600V
Transistor Type :
1 N-Channel
Avalanche Energy Rating (Eas) :
500 mJ
Height :
4.5 mm
Product Status :
Active
Pin Count :
4
Current Rating :
10A
Package Shape :
RECTANGULAR
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Lead Free :
Lead Free
Power Dissipation-Max (Abs) :
200 W
Terminal Position :
Single
Mounting Style :
SMD/SMT
Minimum Operating Temperature :
- 55 C
Qualification Status :
Not Qualified
Current - Continuous Drain (Id) @ 25°C :
10A Tc
Transistor Application :
SWITCHING
Drain to Source Voltage (Vdss) :
600V
Drain-source On Resistance-Max :
0.74Ohm
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Packaging :
Tube
DS Breakdown Voltage-Min :
600 V
Reach Compliance Code :
not_compliant
Terminal Finish :
Matte Tin (Sn)
Drain Current-Max (Abs) (ID) :
10 A
Operating Temperature :
-55°C~150°C TJ
Number of Channels :
1 Channel
Width :
9.2 mm
Rds On (Max) @ Id, Vgs :
740m Ω @ 5A, 10V
JEDEC-95 Code :
TO-263AB
Published :
2010
Package :
Tube
Brand :
IXYS
Configuration :
Single
Input Capacitance (Ciss) (Max) @ Vds :
1610pF @ 25V
Base Product Number :
IXFA10
Drain to Source Breakdown Voltage :
600V
Datasheets
IXFA10N60P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFA10N60P from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:2, Mounting Type:Surface Mount, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Operating Temperature:-55°C~150°C TJ, Number of Channels:1 Channel, IXFA10N60P pinout, IXFA10N60P datasheet PDF, IXFA10N60P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFA10N60P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFA10N60P


N-Channel Tube 740m Ω @ 5A, 10V ±30V 1610pF @ 25V 32nC @ 10V 600V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXFA10N60P Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 500 mJ.A device's maximal input capacitance is 1610pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 10A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 600V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 10 A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 65 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 25A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 600 V.This transistor requires a 600V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IXFA10N60P Features


the avalanche energy rating (Eas) is 500 mJ
a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 65 ns
based on its rated peak drain current 25A.
a 600V drain to source voltage (Vdss)


IXFA10N60P Applications


There are a lot of IXYS
IXFA10N60P applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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