IXFA10N60P
- Mfr.Part #
- IXFA10N60P
- Manufacturer
- Littelfuse
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 10A TO263
- Stock
- 35,742
- In Stock :
- 35,742
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Width :
- 9.2 mm
- Drain Current-Max (Abs) (ID) :
- 10 A
- JESD-30 Code :
- R-PSSO-G2
- Avalanche Energy Rating (Eas) :
- 500 mJ
- Length :
- 9.9 mm
- Number of Terminals :
- 2
- Rds On (Max) @ Id, Vgs :
- 740m Ω @ 5A, 10V
- Brand :
- IXYS
- Drain to Source Breakdown Voltage :
- 600V
- Drain to Source Voltage (Vdss) :
- 600V
- Number of Terminations :
- 2
- Power Dissipation (Max) :
- 200W (Tc)
- Supplier Device Package :
- TO-263 (IXFA)
- Packaging :
- Tube
- Product Type :
- MOSFET
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Published :
- 2010
- Continuous Drain Current (ID) :
- 10A
- Current - Continuous Drain (Id) @ 25°C :
- 10A Tc
- Tradename :
- HiPerFET
- Transistor Application :
- SWITCHING
- Fall Time (Typ) :
- 21 ns
- Transistor Element Material :
- SILICON
- Package :
- Tube
- RoHS :
- Details
- Operating Temperature :
- -55°C~150°C TJ
- RoHS Status :
- ROHS3 Compliant
- Element Configuration :
- Single
- Number of Channels :
- 1 Channel
- Pbfree Code :
- yes
- Minimum Operating Temperature :
- - 55 C
- Series :
- HiPerFET™, PolarP2™
- Mounting Style :
- SMD/SMT
- Power Dissipation :
- 200W
- Terminal Finish :
- Matte Tin (Sn)
- Configuration :
- Single
- Transistor Polarity :
- N-Channel
- Transistor Type :
- 1 N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Product Category :
- MOSFET
- Qualification Status :
- Not Qualified
- JEDEC-95 Code :
- TO-263AB
- Turn-Off Delay Time :
- 65 ns
- Product Status :
- Active
- Channel Mode :
- Enhancement
- Current Rating :
- 10A
- FET Feature :
- --
- Gate Charge (Qg) (Max) @ Vgs :
- 32nC @ 10V
- Terminal Position :
- Single
- Pin Count :
- 4
- Lead Free :
- Lead Free
- Gate to Source Voltage (Vgs) :
- 30V
- Operating Mode :
- ENHANCEMENT MODE
- Number of Elements :
- 1
- DS Breakdown Voltage-Min :
- 600 V
- Rise Time :
- 27ns
- Pulsed Drain Current-Max (IDM) :
- 25A
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Vgs(th) (Max) @ Id :
- 5.5V @ 1mA
- Base Product Number :
- IXFA10
- Case Connection :
- DRAIN
- Package Shape :
- RECTANGULAR
- Voltage - Rated DC :
- 600V
- Height :
- 4.5 mm
- Additional Feature :
- AVALANCHE RATED
- Power Dissipation-Max (Abs) :
- 200 W
- FET Type :
- N-Channel
- Power Dissipation-Max :
- 200W Tc
- Polarity/Channel Type :
- N-Channel
- Maximum Operating Temperature :
- + 150 C
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- JESD-609 Code :
- e3
- Factory Lead Time :
- 30 Weeks
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Mount :
- Surface Mount
- Vgs (Max) :
- ±30V
- Terminal Form :
- Gull wing
- Input Capacitance (Ciss) (Max) @ Vds :
- 1610pF @ 25V
- Reach Compliance Code :
- not_compliant
- Surface Mount :
- yes
- Drain-source On Resistance-Max :
- 0.74Ohm
- Manufacturer :
- IXYS
- Datasheets
- IXFA10N60P

N-Channel Tube 740m Ω @ 5A, 10V ±30V 1610pF @ 25V 32nC @ 10V 600V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXFA10N60P Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 500 mJ.A device's maximal input capacitance is 1610pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 10A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 600V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 10 A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 65 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 25A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 600 V.This transistor requires a 600V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXFA10N60P Features
the avalanche energy rating (Eas) is 500 mJ
a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 65 ns
based on its rated peak drain current 25A.
a 600V drain to source voltage (Vdss)
IXFA10N60P Applications
There are a lot of IXYS
IXFA10N60P applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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