IXFA10N60P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

Single

Power Dissipation-Max (Abs) :

200 W

Supplier Device Package :

TO-263 (IXFA)

Product Category :

MOSFET

Element Configuration :

Single

Polarity/Channel Type :

N-Channel

Tradename :

HiPerFET

Gate to Source Voltage (Vgs) :

30V

JESD-30 Code :

R-PSSO-G2

Product Type :

MOSFET

Voltage - Rated DC :

600V

RoHS Status :

ROHS3 Compliant

Drain-source On Resistance-Max :

0.74Ohm

Width :

9.2 mm

Terminal Position :

Single

FET Feature :

--

Mounting Style :

SMD/SMT

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current Rating :

10A

Surface Mount :

yes

Drain to Source Voltage (Vdss) :

600V

Continuous Drain Current (ID) :

10A

Packaging :

Tube

DS Breakdown Voltage-Min :

600 V

Drain to Source Breakdown Voltage :

600V

Number of Channels :

1 Channel

Series :

HiPerFET™, PolarP2™

RoHS :

Details

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2010

Mounting Type :

Surface Mount

Package :

Tube

Vgs(th) (Max) @ Id :

5.5V @ 1mA

Pulsed Drain Current-Max (IDM) :

25A

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 10V

Number of Terminations :

2

Base Product Number :

IXFA10

FET Type :

N-Channel

Brand :

IXYS

Rise Time :

27ns

Pbfree Code :

yes

Minimum Operating Temperature :

- 55 C

Factory Lead Time :

30 Weeks

Product Status :

Active

Reach Compliance Code :

not_compliant

Number of Terminals :

2

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

Package Shape :

RECTANGULAR

Case Connection :

DRAIN

Length :

9.9 mm

Power Dissipation :

200W

Lead Free :

Lead Free

Input Capacitance (Ciss) (Max) @ Vds :

1610pF @ 25V

Manufacturer :

IXYS

Power Dissipation-Max :

200W Tc

Fall Time (Typ) :

21 ns

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

10 A

Power Dissipation (Max) :

200W (Tc)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Qualification Status :

Not Qualified

JEDEC-95 Code :

TO-263AB

Avalanche Energy Rating (Eas) :

500 mJ

Channel Mode :

Enhancement

Additional Feature :

AVALANCHE RATED

Pin Count :

4

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±30V

Turn-Off Delay Time :

65 ns

Transistor Polarity :

N-Channel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Finish :

Matte Tin (Sn)

Height :

4.5 mm

Rds On (Max) @ Id, Vgs :

740m Ω @ 5A, 10V

Maximum Operating Temperature :

+ 150 C

Transistor Type :

1 N-Channel