IXFA10N60P
- Mfr.Part #
- IXFA10N60P
- Manufacturer
- Littelfuse
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 10A TO263
- Stock
- 35,742
- In Stock :
- 35,742
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs (Max) :
- ±30V
- RoHS :
- Details
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Series :
- HiPerFET™, PolarP2™
- Vgs(th) (Max) @ Id :
- 5.5V @ 1mA
- Mount :
- Surface Mount
- JESD-30 Code :
- R-PSSO-G2
- Power Dissipation (Max) :
- 200W (Tc)
- Supplier Device Package :
- TO-263 (IXFA)
- Product Category :
- MOSFET
- Gate to Source Voltage (Vgs) :
- 30V
- Case Connection :
- DRAIN
- Transistor Polarity :
- N-Channel
- Product Type :
- MOSFET
- Additional Feature :
- AVALANCHE RATED
- Pbfree Code :
- yes
- Surface Mount :
- yes
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Terminals :
- 2
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation :
- 200W
- Channel Mode :
- Enhancement
- Length :
- 9.9 mm
- Terminal Form :
- Gull wing
- Tradename :
- HiPerFET
- Continuous Drain Current (ID) :
- 10A
- Power Dissipation-Max :
- 200W Tc
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- FET Type :
- N-Channel
- JESD-609 Code :
- e3
- Gate Charge (Qg) (Max) @ Vgs :
- 32nC @ 10V
- Fall Time (Typ) :
- 21 ns
- Maximum Operating Temperature :
- + 150 C
- Factory Lead Time :
- 30 Weeks
- Polarity/Channel Type :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Manufacturer :
- IXYS
- Turn-Off Delay Time :
- 65 ns
- FET Feature :
- --
- Pulsed Drain Current-Max (IDM) :
- 25A
- Number of Terminations :
- 2
- Number of Elements :
- 1
- Rise Time :
- 27ns
- Mounting Type :
- Surface Mount
- Voltage - Rated DC :
- 600V
- Transistor Type :
- 1 N-Channel
- Avalanche Energy Rating (Eas) :
- 500 mJ
- Height :
- 4.5 mm
- Product Status :
- Active
- Pin Count :
- 4
- Current Rating :
- 10A
- Package Shape :
- RECTANGULAR
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Lead Free :
- Lead Free
- Power Dissipation-Max (Abs) :
- 200 W
- Terminal Position :
- Single
- Mounting Style :
- SMD/SMT
- Minimum Operating Temperature :
- - 55 C
- Qualification Status :
- Not Qualified
- Current - Continuous Drain (Id) @ 25°C :
- 10A Tc
- Transistor Application :
- SWITCHING
- Drain to Source Voltage (Vdss) :
- 600V
- Drain-source On Resistance-Max :
- 0.74Ohm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tube
- DS Breakdown Voltage-Min :
- 600 V
- Reach Compliance Code :
- not_compliant
- Terminal Finish :
- Matte Tin (Sn)
- Drain Current-Max (Abs) (ID) :
- 10 A
- Operating Temperature :
- -55°C~150°C TJ
- Number of Channels :
- 1 Channel
- Width :
- 9.2 mm
- Rds On (Max) @ Id, Vgs :
- 740m Ω @ 5A, 10V
- JEDEC-95 Code :
- TO-263AB
- Published :
- 2010
- Package :
- Tube
- Brand :
- IXYS
- Configuration :
- Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 1610pF @ 25V
- Base Product Number :
- IXFA10
- Drain to Source Breakdown Voltage :
- 600V
- Datasheets
- IXFA10N60P

N-Channel Tube 740m Ω @ 5A, 10V ±30V 1610pF @ 25V 32nC @ 10V 600V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXFA10N60P Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 500 mJ.A device's maximal input capacitance is 1610pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 10A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 600V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 10 A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 65 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 25A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 600 V.This transistor requires a 600V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXFA10N60P Features
the avalanche energy rating (Eas) is 500 mJ
a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 65 ns
based on its rated peak drain current 25A.
a 600V drain to source voltage (Vdss)
IXFA10N60P Applications
There are a lot of IXYS
IXFA10N60P applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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