IXFA10N60P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Base Product Number :

IXFA10

JESD-30 Code :

R-PSSO-G2

Pbfree Code :

yes

Case Connection :

DRAIN

Channel Mode :

Enhancement

Power Dissipation :

200W

Power Dissipation-Max :

200W Tc

Drain to Source Voltage (Vdss) :

600V

Pin Count :

4

Supplier Device Package :

TO-263 (IXFA)

Operating Mode :

ENHANCEMENT MODE

RoHS :

Details

Surface Mount :

yes

Rise Time :

27ns

Packaging :

Tube

Pulsed Drain Current-Max (IDM) :

25A

Turn-Off Delay Time :

65 ns

Length :

9.9 mm

Drain Current-Max (Abs) (ID) :

10 A

Continuous Drain Current (ID) :

10A

Manufacturer :

IXYS

Width :

9.2 mm

Gate to Source Voltage (Vgs) :

30V

Additional Feature :

AVALANCHE RATED

Number of Terminals :

2

Mounting Style :

SMD/SMT

Terminal Finish :

Matte Tin (Sn)

Fall Time (Typ) :

21 ns

Height :

4.5 mm

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Voltage - Rated DC :

600V

Product Category :

MOSFET

Factory Lead Time :

30 Weeks

Configuration :

Single

Minimum Operating Temperature :

- 55 C

Polarity/Channel Type :

N-Channel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain to Source Breakdown Voltage :

600V

Number of Channels :

1 Channel

Power Dissipation (Max) :

200W (Tc)

Number of Terminations :

2

Brand :

IXYS

Avalanche Energy Rating (Eas) :

500 mJ

Product Status :

Active

Tradename :

HiPerFET

Drain-source On Resistance-Max :

0.74Ohm

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 10V

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

5.5V @ 1mA

Terminal Form :

Gull wing

Element Configuration :

Single

Maximum Operating Temperature :

+ 150 C

Mounting Type :

Surface Mount

FET Technology :

METAL-OXIDE SEMICONDUCTOR

RoHS Status :

ROHS3 Compliant

JEDEC-95 Code :

TO-263AB

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Input Capacitance (Ciss) (Max) @ Vds :

1610pF @ 25V

Package Shape :

RECTANGULAR

Package :

Tube

Lead Free :

Lead Free

Number of Elements :

1

DS Breakdown Voltage-Min :

600 V

Operating Temperature :

-55°C~150°C TJ

Qualification Status :

Not Qualified

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

740m Ω @ 5A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Reach Compliance Code :

not_compliant

Power Dissipation-Max (Abs) :

200 W

Transistor Type :

1 N-Channel

Transistor Element Material :

SILICON

Product Type :

MOSFET

Published :

2010

Current Rating :

10A

Terminal Position :

Single

Vgs (Max) :

±30V

Transistor Polarity :

N-Channel

Series :

HiPerFET™, PolarP2™

FET Feature :

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