IXFA10N60P

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Mfr.Part #
IXFA10N60P
Manufacturer
Littelfuse
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 600V 10A TO263
Stock
35,742
In Stock :
35,742

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Power Dissipation-Max :
200W Tc
FET Type :
N-Channel
Product Type :
MOSFET
Package Shape :
RECTANGULAR
Mount :
Surface Mount
Product Status :
Active
Additional Feature :
AVALANCHE RATED
Height :
4.5 mm
Turn-Off Delay Time :
65 ns
Drain to Source Breakdown Voltage :
600V
Rds On (Max) @ Id, Vgs :
740m Ω @ 5A, 10V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
RoHS Status :
ROHS3 Compliant
Drive Voltage (Max Rds On,Min Rds On) :
10V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Fall Time (Typ) :
21 ns
Voltage - Rated DC :
600V
JESD-30 Code :
R-PSSO-G2
Tradename :
HiPerFET
Vgs(th) (Max) @ Id :
5.5V @ 1mA
Number of Channels :
1 Channel
Drain to Source Voltage (Vdss) :
600V
Qualification Status :
Not Qualified
Base Product Number :
IXFA10
Width :
9.2 mm
Current - Continuous Drain (Id) @ 25°C :
10A Tc
Operating Temperature :
-55°C~150°C TJ
Power Dissipation (Max) :
200W (Tc)
Drain Current-Max (Abs) (ID) :
10 A
Configuration :
Single
Terminal Finish :
Matte Tin (Sn)
Number of Elements :
1
Minimum Operating Temperature :
- 55 C
Channel Mode :
Enhancement
Power Dissipation :
200W
Series :
HiPerFET™, PolarP2™
Surface Mount :
yes
Continuous Drain Current (ID) :
10A
JEDEC-95 Code :
TO-263AB
Rise Time :
27ns
Lead Free :
Lead Free
Polarity/Channel Type :
N-Channel
Element Configuration :
Single
RoHS :
Details
Published :
2010
Terminal Form :
Gull wing
Case Connection :
DRAIN
Transistor Element Material :
SILICON
Product Category :
MOSFET
Number of Terminals :
2
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Terminal Position :
Single
Number of Terminations :
2
Mounting Style :
SMD/SMT
JESD-609 Code :
e3
Length :
9.9 mm
Power Dissipation-Max (Abs) :
200 W
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Operating Mode :
ENHANCEMENT MODE
Mounting Type :
Surface Mount
Vgs (Max) :
±30V
Transistor Polarity :
N-Channel
Pin Count :
4
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Gate to Source Voltage (Vgs) :
30V
Pbfree Code :
yes
Packaging :
Tube
Transistor Application :
SWITCHING
Maximum Operating Temperature :
+ 150 C
Reach Compliance Code :
not_compliant
DS Breakdown Voltage-Min :
600 V
Avalanche Energy Rating (Eas) :
500 mJ
Supplier Device Package :
TO-263 (IXFA)
Input Capacitance (Ciss) (Max) @ Vds :
1610pF @ 25V
Package :
Tube
Drain-source On Resistance-Max :
0.74Ohm
Manufacturer :
IXYS
Gate Charge (Qg) (Max) @ Vgs :
32nC @ 10V
Pulsed Drain Current-Max (IDM) :
25A
Transistor Type :
1 N-Channel
Brand :
IXYS
Factory Lead Time :
30 Weeks
Current Rating :
10A
FET Feature :
--
Datasheets
IXFA10N60P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFA10N60P from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Number of Terminations:2, Mounting Type:Surface Mount, IXFA10N60P pinout, IXFA10N60P datasheet PDF, IXFA10N60P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFA10N60P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFA10N60P


N-Channel Tube 740m Ω @ 5A, 10V ±30V 1610pF @ 25V 32nC @ 10V 600V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXFA10N60P Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 500 mJ.A device's maximal input capacitance is 1610pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 10A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 600V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 10 A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 65 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 25A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 600 V.This transistor requires a 600V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IXFA10N60P Features


the avalanche energy rating (Eas) is 500 mJ
a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 65 ns
based on its rated peak drain current 25A.
a 600V drain to source voltage (Vdss)


IXFA10N60P Applications


There are a lot of IXYS
IXFA10N60P applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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