IXFA10N60P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminals :

2

Configuration :

Single

Pulsed Drain Current-Max (IDM) :

25A

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 10V

Published :

2010

Package Shape :

RECTANGULAR

Base Product Number :

IXFA10

Lead Free :

Lead Free

Input Capacitance (Ciss) (Max) @ Vds :

1610pF @ 25V

Reach Compliance Code :

not_compliant

Avalanche Energy Rating (Eas) :

500 mJ

Terminal Form :

Gull wing

Additional Feature :

AVALANCHE RATED

Qualification Status :

Not Qualified

JESD-30 Code :

R-PSSO-G2

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Minimum Operating Temperature :

- 55 C

Surface Mount :

yes

Supplier Device Package :

TO-263 (IXFA)

Manufacturer :

IXYS

FET Feature :

--

Brand :

IXYS

Element Configuration :

Single

RoHS :

Details

Vgs(th) (Max) @ Id :

5.5V @ 1mA

Transistor Type :

1 N-Channel

Drain to Source Breakdown Voltage :

600V

Number of Channels :

1 Channel

JESD-609 Code :

e3

Case Connection :

DRAIN

Turn-Off Delay Time :

65 ns

Pbfree Code :

yes

FET Type :

N-Channel

Factory Lead Time :

30 Weeks

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Packaging :

Tube

JEDEC-95 Code :

TO-263AB

Drain to Source Voltage (Vdss) :

600V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

200W Tc

Tradename :

HiPerFET

Rds On (Max) @ Id, Vgs :

740m Ω @ 5A, 10V

Series :

HiPerFET™, PolarP2™

Terminal Finish :

Matte Tin (Sn)

Product Category :

MOSFET

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Height :

4.5 mm

Fall Time (Typ) :

21 ns

Voltage - Rated DC :

600V

Number of Terminations :

2

Product Type :

MOSFET

Package :

Tube

RoHS Status :

ROHS3 Compliant

Transistor Polarity :

N-Channel

Pin Count :

4

Mounting Style :

SMD/SMT

DS Breakdown Voltage-Min :

600 V

Rise Time :

27ns

Drain-source On Resistance-Max :

0.74Ohm

Maximum Operating Temperature :

+ 150 C

Power Dissipation :

200W

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Continuous Drain Current (ID) :

10A

Polarity/Channel Type :

N-Channel

Vgs (Max) :

±30V

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Transistor Application :

SWITCHING

Mount :

Surface Mount

Current Rating :

10A

Width :

9.2 mm

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Length :

9.9 mm

Gate to Source Voltage (Vgs) :

30V

Drain Current-Max (Abs) (ID) :

10 A

Power Dissipation (Max) :

200W (Tc)

Power Dissipation-Max (Abs) :

200 W

Channel Mode :

Enhancement

Terminal Position :

Single

Product Status :

Active

Current - Continuous Drain (Id) @ 25°C :

10A Tc