IXFA10N60P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

600V

Input Capacitance (Ciss) (Max) @ Vds :

1610pF @ 25V

Surface Mount :

yes

Packaging :

Tube

Drain to Source Breakdown Voltage :

600V

Mount :

Surface Mount

Additional Feature :

AVALANCHE RATED

Rds On (Max) @ Id, Vgs :

740m Ω @ 5A, 10V

Number of Channels :

1 Channel

Minimum Operating Temperature :

- 55 C

Factory Lead Time :

30 Weeks

Manufacturer :

IXYS

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

25A

Number of Terminals :

2

JESD-30 Code :

R-PSSO-G2

Product Category :

MOSFET

Qualification Status :

Not Qualified

Lead Free :

Lead Free

DS Breakdown Voltage-Min :

600 V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Series :

HiPerFET™, PolarP2™

Height :

4.5 mm

Power Dissipation :

200W

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 10V

Power Dissipation (Max) :

200W (Tc)

Product Type :

MOSFET

JESD-609 Code :

e3

Continuous Drain Current (ID) :

10A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Supplier Device Package :

TO-263 (IXFA)

Width :

9.2 mm

Gate to Source Voltage (Vgs) :

30V

Terminal Position :

Single

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Terminal Finish :

Matte Tin (Sn)

RoHS :

Details

Pbfree Code :

yes

Transistor Polarity :

N-Channel

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Package :

Tube

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max (Abs) :

200 W

Fall Time (Typ) :

21 ns

Polarity/Channel Type :

N-Channel

Terminal Form :

Gull wing

Vgs(th) (Max) @ Id :

5.5V @ 1mA

Brand :

IXYS

Mounting Type :

Surface Mount

Case Connection :

DRAIN

Drain-source On Resistance-Max :

0.74Ohm

Power Dissipation-Max :

200W Tc

Drain Current-Max (Abs) (ID) :

10 A

Reach Compliance Code :

not_compliant

Published :

2010

Current Rating :

10A

Maximum Operating Temperature :

+ 150 C

Pin Count :

4

Number of Terminations :

2

JEDEC-95 Code :

TO-263AB

Channel Mode :

Enhancement

Voltage - Rated DC :

600V

Transistor Type :

1 N-Channel

Operating Mode :

ENHANCEMENT MODE

Length :

9.9 mm

Configuration :

Single

Turn-Off Delay Time :

65 ns

FET Feature :

--

Package Shape :

RECTANGULAR

Product Status :

Active

Base Product Number :

IXFA10

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

FET Type :

N-Channel

Number of Elements :

1

Avalanche Energy Rating (Eas) :

500 mJ

Mounting Style :

SMD/SMT

Vgs (Max) :

±30V

Rise Time :

27ns

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

Tradename :

HiPerFET