IXFA10N60P
- Mfr.Part #
- IXFA10N60P
- Manufacturer
- Littelfuse
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 10A TO263
- Stock
- 35,742
- In Stock :
- 35,742
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JESD-30 Code :
- R-PSSO-G2
- Pulsed Drain Current-Max (IDM) :
- 25A
- Voltage - Rated DC :
- 600V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Polarity/Channel Type :
- N-Channel
- Fall Time (Typ) :
- 21 ns
- Terminal Finish :
- Matte Tin (Sn)
- Power Dissipation (Max) :
- 200W (Tc)
- Additional Feature :
- AVALANCHE RATED
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Transistor Type :
- 1 N-Channel
- Brand :
- IXYS
- FET Type :
- N-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Maximum Operating Temperature :
- + 150 C
- Drain to Source Breakdown Voltage :
- 600V
- Element Configuration :
- Single
- Rise Time :
- 27ns
- Transistor Application :
- SWITCHING
- Height :
- 4.5 mm
- DS Breakdown Voltage-Min :
- 600 V
- Transistor Element Material :
- SILICON
- Power Dissipation-Max :
- 200W Tc
- Pbfree Code :
- yes
- Avalanche Energy Rating (Eas) :
- 500 mJ
- Power Dissipation-Max (Abs) :
- 200 W
- Published :
- 2010
- Vgs (Max) :
- ±30V
- Channel Mode :
- Enhancement
- Qualification Status :
- Not Qualified
- RoHS :
- Details
- Drain Current-Max (Abs) (ID) :
- 10 A
- Base Product Number :
- IXFA10
- FET Feature :
- --
- Number of Elements :
- 1
- Package Shape :
- RECTANGULAR
- Surface Mount :
- yes
- Width :
- 9.2 mm
- Tradename :
- HiPerFET
- Product Status :
- Active
- Current - Continuous Drain (Id) @ 25°C :
- 10A Tc
- JEDEC-95 Code :
- TO-263AB
- Configuration :
- Single
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Input Capacitance (Ciss) (Max) @ Vds :
- 1610pF @ 25V
- Manufacturer :
- IXYS
- Gate Charge (Qg) (Max) @ Vgs :
- 32nC @ 10V
- Series :
- HiPerFET™, PolarP2™
- Mounting Style :
- SMD/SMT
- Factory Lead Time :
- 30 Weeks
- Mount :
- Surface Mount
- Number of Channels :
- 1 Channel
- RoHS Status :
- ROHS3 Compliant
- Drain to Source Voltage (Vdss) :
- 600V
- Transistor Polarity :
- N-Channel
- Terminal Position :
- Single
- Product Category :
- MOSFET
- Length :
- 9.9 mm
- Operating Mode :
- ENHANCEMENT MODE
- Pin Count :
- 4
- Drain-source On Resistance-Max :
- 0.74Ohm
- Number of Terminals :
- 2
- Lead Free :
- Lead Free
- JESD-609 Code :
- e3
- Rds On (Max) @ Id, Vgs :
- 740m Ω @ 5A, 10V
- Continuous Drain Current (ID) :
- 10A
- Package :
- Tube
- Terminal Form :
- Gull wing
- Vgs(th) (Max) @ Id :
- 5.5V @ 1mA
- Gate to Source Voltage (Vgs) :
- 30V
- Operating Temperature :
- -55°C~150°C TJ
- Product Type :
- MOSFET
- Case Connection :
- DRAIN
- Minimum Operating Temperature :
- - 55 C
- Supplier Device Package :
- TO-263 (IXFA)
- Power Dissipation :
- 200W
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Current Rating :
- 10A
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Turn-Off Delay Time :
- 65 ns
- Number of Terminations :
- 2
- Mounting Type :
- Surface Mount
- Packaging :
- Tube
- Reach Compliance Code :
- not_compliant
- Datasheets
- IXFA10N60P

N-Channel Tube 740m Ω @ 5A, 10V ±30V 1610pF @ 25V 32nC @ 10V 600V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IXFA10N60P Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 500 mJ.A device's maximal input capacitance is 1610pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 10A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 600V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 10 A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 65 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 25A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 600 V.This transistor requires a 600V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXFA10N60P Features
the avalanche energy rating (Eas) is 500 mJ
a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 65 ns
based on its rated peak drain current 25A.
a 600V drain to source voltage (Vdss)
IXFA10N60P Applications
There are a lot of IXYS
IXFA10N60P applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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