IXFA10N60P

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Mfr.Part #
IXFA10N60P
Manufacturer
Littelfuse
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 600V 10A TO263
Stock
35,742
In Stock :
35,742

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Mounting Type :
Surface Mount
Published :
2010
Product Status :
Active
Qualification Status :
Not Qualified
Terminal Finish :
Matte Tin (Sn)
Element Configuration :
Single
Maximum Operating Temperature :
+ 150 C
Number of Terminals :
2
Width :
9.2 mm
Gate Charge (Qg) (Max) @ Vgs :
32nC @ 10V
Avalanche Energy Rating (Eas) :
500 mJ
Terminal Form :
Gull wing
Power Dissipation (Max) :
200W (Tc)
Gate to Source Voltage (Vgs) :
30V
Operating Mode :
ENHANCEMENT MODE
Vgs(th) (Max) @ Id :
5.5V @ 1mA
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Package :
Tube
Transistor Type :
1 N-Channel
Drive Voltage (Max Rds On,Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
740m Ω @ 5A, 10V
Drain to Source Breakdown Voltage :
600V
Power Dissipation :
200W
Supplier Device Package :
TO-263 (IXFA)
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Operating Temperature :
-55°C~150°C TJ
JEDEC-95 Code :
TO-263AB
Pin Count :
4
FET Feature :
--
JESD-30 Code :
R-PSSO-G2
Pbfree Code :
yes
Mounting Style :
SMD/SMT
Base Product Number :
IXFA10
Product Type :
MOSFET
Packaging :
Tube
Series :
HiPerFET™, PolarP2™
DS Breakdown Voltage-Min :
600 V
Number of Channels :
1 Channel
Lead Free :
Lead Free
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Pulsed Drain Current-Max (IDM) :
25A
Current - Continuous Drain (Id) @ 25°C :
10A Tc
RoHS :
Details
Package Shape :
RECTANGULAR
Case Connection :
DRAIN
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Rise Time :
27ns
Channel Mode :
Enhancement
RoHS Status :
ROHS3 Compliant
Current Rating :
10A
FET Type :
N-Channel
Height :
4.5 mm
Turn-Off Delay Time :
65 ns
Transistor Application :
SWITCHING
Length :
9.9 mm
Product Category :
MOSFET
Mount :
Surface Mount
Vgs (Max) :
±30V
Fall Time (Typ) :
21 ns
Drain Current-Max (Abs) (ID) :
10 A
Polarity/Channel Type :
N-Channel
Power Dissipation-Max (Abs) :
200 W
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Configuration :
Single
Transistor Polarity :
N-Channel
Input Capacitance (Ciss) (Max) @ Vds :
1610pF @ 25V
Drain-source On Resistance-Max :
0.74Ohm
Surface Mount :
yes
Drain to Source Voltage (Vdss) :
600V
Number of Elements :
1
Factory Lead Time :
30 Weeks
Manufacturer :
IXYS
Continuous Drain Current (ID) :
10A
JESD-609 Code :
e3
Additional Feature :
AVALANCHE RATED
Tradename :
HiPerFET
Terminal Position :
Single
Voltage - Rated DC :
600V
Power Dissipation-Max :
200W Tc
Reach Compliance Code :
not_compliant
Brand :
IXYS
Minimum Operating Temperature :
- 55 C
Transistor Element Material :
SILICON
Number of Terminations :
2
Datasheets
IXFA10N60P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFA10N60P from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Operating Temperature:-55°C~150°C TJ, Number of Channels:1 Channel, Number of Terminations:2, IXFA10N60P pinout, IXFA10N60P datasheet PDF, IXFA10N60P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFA10N60P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFA10N60P


N-Channel Tube 740m Ω @ 5A, 10V ±30V 1610pF @ 25V 32nC @ 10V 600V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXFA10N60P Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 500 mJ.A device's maximal input capacitance is 1610pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 10A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 600V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 10 A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 65 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 25A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 600 V.This transistor requires a 600V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IXFA10N60P Features


the avalanche energy rating (Eas) is 500 mJ
a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 65 ns
based on its rated peak drain current 25A.
a 600V drain to source voltage (Vdss)


IXFA10N60P Applications


There are a lot of IXYS
IXFA10N60P applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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