IXFA110N15T2

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

800 mJ

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package Shape :

RECTANGULAR

Supplier Device Package :

TO-263 (D2Pak)

Package :

Tube

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Terminal Position :

Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Input Capacitance (Ciss) (Max) @ Vds :

8600pF @ 25V

Power Dissipation-Max (Abs) :

480 W

Case Connection :

DRAIN

Power Dissipation-Max :

480W Tc

FET Type :

N-Channel

Mounting Type :

Surface Mount

Product Type :

MOSFET

Transistor Application :

SWITCHING

Product Category :

MOSFET

Pulsed Drain Current-Max (IDM) :

300 A

Manufacturer :

IXYS

Packaging :

Tape and Reel (TR)

Number of Pins :

3

Number of Channels :

1 Channel

Base Product Number :

IXFA110

Continuous Drain Current (ID) :

110A

Operating Temperature :

-55°C~175°C TJ

RoHS Status :

RoHS Compliant

DS Breakdown Voltage-Min :

150V

Rise Time :

16 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Brand :

IXYS

Additional Feature :

AVALANCHE RATED

Drain-source On Resistance-Max :

0.013 Ω

Operating Mode :

ENHANCEMENT MODE

Minimum Operating Temperature :

- 55 C

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Transistor Element Material :

SILICON

Transistor Type :

1 N-Channel

JESD-609 Code :

e3

ECCN Code :

EAR99

Number of Terminations :

2

Current - Continuous Drain (Id) @ 25°C :

110A Tc

Terminal Finish :

Matte Tin (Sn)

Qualification Status :

Not Qualified

Reach Compliance Code :

not_compliant

Transistor Polarity :

N-Channel

Drain to Source Voltage (Vdss) :

150V

Product Status :

Active

JEDEC-95 Code :

TO-263AB

Polarity/Channel Type :

N-Channel

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Surface Mount :

yes

Number of Terminals :

2

Drain Current-Max (Abs) (ID) :

110 A

Pin Count :

4

Rds On (Max) @ Id, Vgs :

13m Ω @ 55A, 10V

Mounting Style :

SMD/SMT

JESD-30 Code :

R-PSSO-G2

Tradename :

HiPerFET

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

150nC @ 10V

FET Feature :

-

Series :

HiPerFET™, TrenchT2™

Channel Mode :

Enhancement

Number of Elements :

1

Published :

2007

Maximum Operating Temperature :

+ 175 C

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

2 (1 Year)

Vgs (Max) :

±20V

Power Dissipation (Max) :

480W (Tc)

Factory Lead Time :

30 Weeks

RoHS :

Details