IXFA110N15T2

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2007

Polarity/Channel Type :

N-Channel

Number of Terminals :

2

Drain to Source Voltage (Vdss) :

150V

Mounting Type :

Surface Mount

Package Shape :

RECTANGULAR

Additional Feature :

AVALANCHE RATED

Pulsed Drain Current-Max (IDM) :

300 A

Transistor Type :

1 N-Channel

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e3

Channel Mode :

Enhancement

Surface Mount :

yes

Maximum Operating Temperature :

+ 175 C

RoHS Status :

RoHS Compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

Supplier Device Package :

TO-263 (D2Pak)

Terminal Finish :

Matte Tin (Sn)

FET Feature :

-

Product Status :

Active

Continuous Drain Current (ID) :

110A

Mount :

Surface Mount

Rds On (Max) @ Id, Vgs :

13m Ω @ 55A, 10V

Manufacturer :

IXYS

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

110A Tc

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Power Dissipation (Max) :

480W (Tc)

Package :

Tube

Terminal Position :

Single

RoHS :

Details

JEDEC-95 Code :

TO-263AB

Minimum Operating Temperature :

- 55 C

Base Product Number :

IXFA110

Number of Terminations :

2

Configuration :

SINGLE WITH BUILT-IN DIODE

Product Category :

MOSFET

Mounting Style :

SMD/SMT

Pbfree Code :

yes

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

3

FET Type :

N-Channel

Product Type :

MOSFET

Operating Temperature :

-55°C~175°C TJ

Qualification Status :

Not Qualified

Pin Count :

4

Power Dissipation-Max :

480W Tc

DS Breakdown Voltage-Min :

150V

Rise Time :

16 ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-30 Code :

R-PSSO-G2

Gate Charge (Qg) (Max) @ Vgs :

150nC @ 10V

Reach Compliance Code :

not_compliant

Series :

HiPerFET™, TrenchT2™

Drain-source On Resistance-Max :

0.013 Ω

Drain Current-Max (Abs) (ID) :

110 A

Number of Channels :

1 Channel

Case Connection :

DRAIN

Avalanche Energy Rating (Eas) :

800 mJ

Input Capacitance (Ciss) (Max) @ Vds :

8600pF @ 25V

Tradename :

HiPerFET

Transistor Polarity :

N-Channel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Factory Lead Time :

30 Weeks

Power Dissipation-Max (Abs) :

480 W

Terminal Form :

Gull wing

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Brand :

IXYS

Moisture Sensitivity Level (MSL) :

2 (1 Year)

Transistor Application :

SWITCHING

Vgs (Max) :

±20V