IXFA110N15T2

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminals :

2

Transistor Application :

SWITCHING

Drain Current-Max (Abs) (ID) :

110 A

Moisture Sensitivity Level (MSL) :

2 (1 Year)

Number of Channels :

1 Channel

Transistor Element Material :

SILICON

Product Category :

MOSFET

Mounting Type :

Surface Mount

Package Shape :

RECTANGULAR

Packaging :

Tape and Reel (TR)

Pulsed Drain Current-Max (IDM) :

300 A

Minimum Operating Temperature :

- 55 C

Power Dissipation-Max (Abs) :

480 W

Qualification Status :

Not Qualified

Rise Time :

16 ns

Product Type :

MOSFET

Number of Pins :

3

Avalanche Energy Rating (Eas) :

800 mJ

Maximum Operating Temperature :

+ 175 C

Number of Elements :

1

DS Breakdown Voltage-Min :

150V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JEDEC-95 Code :

TO-263AB

Mount :

Surface Mount

Reach Compliance Code :

not_compliant

Channel Mode :

Enhancement

RoHS :

Details

Additional Feature :

AVALANCHE RATED

Gate Charge (Qg) (Max) @ Vgs :

150nC @ 10V

Supplier Device Package :

TO-263 (D2Pak)

JESD-30 Code :

R-PSSO-G2

Base Product Number :

IXFA110

Product Status :

Active

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package :

Tube

Case Connection :

DRAIN

FET Feature :

-

Terminal Form :

Gull wing

Series :

HiPerFET™, TrenchT2™

Terminal Finish :

Matte Tin (Sn)

Terminal Position :

Single

Continuous Drain Current (ID) :

110A

Surface Mount :

yes

Tradename :

HiPerFET

Brand :

IXYS

Power Dissipation-Max :

480W Tc

ECCN Code :

EAR99

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

8600pF @ 25V

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

150V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Drain-source On Resistance-Max :

0.013 Ω

Transistor Polarity :

N-Channel

Mounting Style :

SMD/SMT

Power Dissipation (Max) :

480W (Tc)

Factory Lead Time :

30 Weeks

Operating Mode :

ENHANCEMENT MODE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code :

e3

Operating Temperature :

-55°C~175°C TJ

Manufacturer :

IXYS

RoHS Status :

RoHS Compliant

Number of Terminations :

2

Pin Count :

4

Rds On (Max) @ Id, Vgs :

13m Ω @ 55A, 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

N-Channel

Published :

2007

Polarity/Channel Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

110A Tc

Transistor Type :

1 N-Channel