IXFA110N15T2

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

2

Polarity/Channel Type :

N-Channel

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Manufacturer :

IXYS

Mounting Style :

SMD/SMT

Terminal Position :

Single

Surface Mount :

yes

RoHS Status :

RoHS Compliant

Power Dissipation-Max :

480W Tc

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

JEDEC-95 Code :

TO-263AB

Package :

Tube

Power Dissipation-Max (Abs) :

480 W

Pulsed Drain Current-Max (IDM) :

300 A

Vgs (Max) :

±20V

Brand :

IXYS

Additional Feature :

AVALANCHE RATED

Published :

2007

Packaging :

Tape and Reel (TR)

Product Category :

MOSFET

Moisture Sensitivity Level (MSL) :

2 (1 Year)

ECCN Code :

EAR99

Pin Count :

4

Supplier Device Package :

TO-263 (D2Pak)

Factory Lead Time :

30 Weeks

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Form :

Gull wing

Terminal Finish :

Matte Tin (Sn)

Transistor Element Material :

SILICON

Rise Time :

16 ns

Configuration :

SINGLE WITH BUILT-IN DIODE

Mount :

Surface Mount

Mounting Type :

Surface Mount

Base Product Number :

IXFA110

Continuous Drain Current (ID) :

110A

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Minimum Operating Temperature :

- 55 C

Operating Temperature :

-55°C~175°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

8600pF @ 25V

Qualification Status :

Not Qualified

Drain to Source Voltage (Vdss) :

150V

Transistor Application :

SWITCHING

JESD-30 Code :

R-PSSO-G2

DS Breakdown Voltage-Min :

150V

Number of Channels :

1 Channel

Number of Elements :

1

Tradename :

HiPerFET

Series :

HiPerFET™, TrenchT2™

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Channel Mode :

Enhancement

Drain-source On Resistance-Max :

0.013 Ω

Avalanche Energy Rating (Eas) :

800 mJ

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

110A Tc

RoHS :

Details

FET Feature :

-

Rds On (Max) @ Id, Vgs :

13m Ω @ 55A, 10V

Package Shape :

RECTANGULAR

Gate Charge (Qg) (Max) @ Vgs :

150nC @ 10V

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Pbfree Code :

yes

Maximum Operating Temperature :

+ 175 C

Power Dissipation (Max) :

480W (Tc)

Number of Pins :

3

Operating Mode :

ENHANCEMENT MODE

Reach Compliance Code :

not_compliant

Number of Terminals :

2

Transistor Type :

1 N-Channel

Product Type :

MOSFET

Product Status :

Active

Transistor Polarity :

N-Channel

Drain Current-Max (Abs) (ID) :

110 A