IRGR4045DPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Gate Charge :

19.5nC

Turn-Off Delay Time :

17 ns

Number of Elements :

1

Turn Off Time-Nom (toff) :

127 ns

Current - Collector Pulsed (Icm) :

18A

Rise Time-Max :

15ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~175°C TJ

Turn On Delay Time :

27 ns

Published :

2012

Number of Pins :

3

Height :

6.22mm

Collector Emitter Voltage (VCEO) :

2V

Number of Terminations :

2

Transistor Application :

POWER CONTROL

Lead Free :

Lead Free

Input Type :

Standard

Power - Max :

77W

Vce(on) (Max) @ Vge, Ic :

2V @ 15V, 6A

Reverse Recovery Time :

74 ns

ECCN Code :

EAR99

JEDEC-95 Code :

TO-252AA

Fall Time-Max (tf) :

22ns

Test Condition :

400V, 6A, 47 Ω, 15V

Collector Emitter Breakdown Voltage :

600V

Case Connection :

COLLECTOR

Turn On Time :

38 ns

Radiation Hardening :

No

Element Configuration :

Single

Width :

2.39mm

Gate-Emitter Thr Voltage-Max :

6.5V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Td (on/off) @ 25°C :

27ns/75ns

Packaging :

Tube

Base Part Number :

IRGR4045

JESD-30 Code :

R-PSSO-G2

Switching Energy :

56μJ (on), 122μJ (off)

Max Collector Current :

12A

Mounting Type :

Surface Mount

Max Power Dissipation :

77W

Length :

6.73mm

Collector Emitter Saturation Voltage :

2V

Polarity/Channel Type :

N-Channel

Mount :

Surface Mount

IGBT Type :

Trench

Power Dissipation :

39W

Terminal Form :

Gull wing

RoHS Status :

RoHS Compliant

Gate-Emitter Voltage-Max :

20V