IRGR4045DPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Collector Emitter Saturation Voltage :

2V

Transistor Application :

POWER CONTROL

Power Dissipation :

39W

Lead Free :

Lead Free

Width :

2.39mm

Operating Temperature :

-55°C~175°C TJ

Mounting Type :

Surface Mount

Power - Max :

77W

Number of Terminations :

2

Length :

6.73mm

Fall Time-Max (tf) :

22ns

Td (on/off) @ 25°C :

27ns/75ns

Turn Off Time-Nom (toff) :

127 ns

Number of Pins :

3

Transistor Element Material :

SILICON

Height :

6.22mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Time :

38 ns

Radiation Hardening :

No

IGBT Type :

Trench

Input Type :

Standard

Base Part Number :

IRGR4045

RoHS Status :

RoHS Compliant

JESD-30 Code :

R-PSSO-G2

Test Condition :

400V, 6A, 47 Ω, 15V

Max Power Dissipation :

77W

Collector Emitter Breakdown Voltage :

600V

Vce(on) (Max) @ Vge, Ic :

2V @ 15V, 6A

Rise Time-Max :

15ns

Reverse Recovery Time :

74 ns

Number of Elements :

1

Case Connection :

COLLECTOR

Switching Energy :

56μJ (on), 122μJ (off)

Gate-Emitter Thr Voltage-Max :

6.5V

Gate-Emitter Voltage-Max :

20V

Terminal Form :

Gull wing

Turn On Delay Time :

27 ns

Collector Emitter Voltage (VCEO) :

2V

Turn-Off Delay Time :

17 ns

Max Collector Current :

12A

Mount :

Surface Mount

Current - Collector Pulsed (Icm) :

18A

ECCN Code :

EAR99

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Polarity/Channel Type :

N-Channel

Gate Charge :

19.5nC

Element Configuration :

Single

JEDEC-95 Code :

TO-252AA

Published :

2012

Packaging :

Tube