IRGR3B60KD2PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tube

Test Condition :

400V, 3A, 100 Ω, 15V

Mounting Type :

Surface Mount

JESD-30 Code :

R-PSSO-G2

Length :

6.7056mm

Vce(on) (Max) @ Vge, Ic :

2.4V @ 15V, 3A

Switching Energy :

62μJ (on), 39μJ (off)

Gate-Emitter Voltage-Max :

20V

Operating Temperature :

-55°C~150°C TJ

Current - Collector Pulsed (Icm) :

15.6A

Rise Time-Max :

22ns

Max Collector Current :

7.8A

Fall Time-Max (tf) :

105ns

Power Dissipation :

52W

RoHS Status :

RoHS Compliant

Gate-Emitter Thr Voltage-Max :

5.5V

Td (on/off) @ 25°C :

18ns/110ns

Number of Elements :

1

Collector Emitter Breakdown Voltage :

600V

Published :

2003

Collector Emitter Saturation Voltage :

2.4V

Max Power Dissipation :

52W

IGBT Type :

NPT

Transistor Element Material :

SILICON

Radiation Hardening :

No

Transistor Application :

Motor Control

Turn On Time :

35 ns

Width :

6.223mm

ECCN Code :

EAR99

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Element Configuration :

Single

Weight :

350.003213mg

Polarity/Channel Type :

N-Channel

Input Type :

Standard

Base Part Number :

IRGR3B60KD2PBF

JESD-609 Code :

e3

Mount :

Surface Mount

JEDEC-95 Code :

TO-252AA

Factory Lead Time :

17 Weeks

Terminal Form :

Gull wing

Turn Off Time-Nom (toff) :

211 ns

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

30

Height :

1.2446mm

Reverse Recovery Time :

77 ns

Number of Pins :

3

Collector Emitter Voltage (VCEO) :

2.4V

Number of Terminations :

2

Gate Charge :

13nC