IRGR3B60KD2TRP

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Switching Energy :

62μJ (on), 39μJ (off)

Gate-Emitter Thr Voltage-Max :

5.5V

Td (on/off) @ 25°C :

18ns/110ns

Collector Emitter Breakdown Voltage :

600V

Turn On Time :

35 ns

Reverse Recovery Time :

77 ns

Peak Reflow Temperature (Cel) :

260

Number of Pins :

3

Current - Collector Pulsed (Icm) :

15.6A

Published :

2003

Operating Temperature :

-55°C~150°C TJ

Collector Emitter Voltage (VCEO) :

2.4V

Gate Charge :

13nC

Lead Free :

Lead Free

Rise Time-Max :

22ns

Max Collector Current :

7.8A

Polarity/Channel Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Transistor Application :

Motor Control

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

2

Gate-Emitter Voltage-Max :

20V

Base Part Number :

IRGR3B60KD2PBF

Packaging :

Tape and Reel (TR)

JESD-30 Code :

R-PSSO-G2

Number of Elements :

1

Max Breakdown Voltage :

600V

Terminal Form :

Gull wing

Power Dissipation :

52W

JEDEC-95 Code :

TO-252AA

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Turn Off Time-Nom (toff) :

211 ns

Max Power Dissipation :

52W

JESD-609 Code :

e3

Transistor Element Material :

SILICON

IGBT Type :

NPT

Mounting Type :

Surface Mount

Factory Lead Time :

13 Weeks

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Mount :

Surface Mount

Test Condition :

400V, 3A, 100 Ω, 15V

Input Type :

Standard

Vce(on) (Max) @ Vge, Ic :

2.4V @ 15V, 3A

Time@Peak Reflow Temperature-Max (s) :

30

Collector Emitter Saturation Voltage :

1.9V

Fall Time-Max (tf) :

105ns