IRGR3B60KD2TRP
- Mfr.Part #
- IRGR3B60KD2TRP
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- IRGR3B60 - INSULATED GATE BIPOLA
- Stock
- 27,200
- In Stock :
- 27,200
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Single
- Transistor Element Material :
- SILICON
- Terminal Finish :
- Matte Tin (Sn) - with Nickel (Ni) barrier
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Polarity/Channel Type :
- N-Channel
- Mount :
- Surface Mount
- Td (on/off) @ 25°C :
- 18ns/110ns
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 2
- Mounting Type :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Collector Emitter Breakdown Voltage :
- 600V
- Gate Charge :
- 13nC
- Gate-Emitter Thr Voltage-Max :
- 5.5V
- JEDEC-95 Code :
- TO-252AA
- Max Collector Current :
- 7.8A
- Turn On Time :
- 35 ns
- Element Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 2.4V
- Terminal Form :
- Gull wing
- Max Breakdown Voltage :
- 600V
- Operating Temperature :
- -55°C~150°C TJ
- Gate-Emitter Voltage-Max :
- 20V
- Peak Reflow Temperature (Cel) :
- 260
- Number of Pins :
- 3
- Transistor Application :
- Motor Control
- Input Type :
- Standard
- IGBT Type :
- NPT
- JESD-609 Code :
- e3
- Lead Free :
- Lead Free
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Reverse Recovery Time :
- 77 ns
- Base Part Number :
- IRGR3B60KD2PBF
- Current - Collector Pulsed (Icm) :
- 15.6A
- Factory Lead Time :
- 13 Weeks
- Test Condition :
- 400V, 3A, 100 Ω, 15V
- Turn Off Time-Nom (toff) :
- 211 ns
- Collector Emitter Saturation Voltage :
- 1.9V
- Switching Energy :
- 62μJ (on), 39μJ (off)
- Power Dissipation :
- 52W
- JESD-30 Code :
- R-PSSO-G2
- Fall Time-Max (tf) :
- 105ns
- Published :
- 2003
- Vce(on) (Max) @ Vge, Ic :
- 2.4V @ 15V, 3A
- Packaging :
- Tape and Reel (TR)
- Rise Time-Max :
- 22ns
- Max Power Dissipation :
- 52W
- Number of Elements :
- 1
- Datasheets
- IRGR3B60KD2TRP

IRGR3B60KD2TRP datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRGR3B60KD2TRP Description
IRGR3B60KD2TRP is a type of insulated gate bipolar transistor with an ultrafast soft recovery diode, which is manufactured by Infineon Technologies to provide high efficiency in motor drive applications. Due to its 10μs short circuit SOA, it is able to increase the margin for the short circuit protection scheme. Moreover, excellent current sharing can be delivered in parallel operation due to its positive VCE(ON) temperature coefficient. Moreover, it provides rugged transient performance based on square RBSOA and high ILM- rating.
IRGR3B60KD2TRP Features
Benchmark efficiency for motor control
Rugged transient performance
Low EMI
Excellent current sharing in parallel operation
IRGR3B60KD2TRP Applications
Industrial motor drive
UPS
Solar inverters
Welding
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