IRGR2B60KDTRRPBF
- Mfr.Part #
- IRGR2B60KDTRRPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- IGBT NPT 600V 6.3A DPAK
- Stock
- 36,179
- In Stock :
- 36,179
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Single
- Input Type :
- Standard
- Test Condition :
- 400V, 2A, 100 Ω, 15V
- Base Part Number :
- IRGR2B60
- ECCN Code :
- EAR99
- Operating Temperature :
- -55°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 6.3A
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Gate Charge :
- 12nC
- Number of Pins :
- 3
- Rise Time-Max :
- 25ns
- Factory Lead Time :
- 13 Weeks
- Collector Emitter Breakdown Voltage :
- 600V
- Current - Collector Pulsed (Icm) :
- 8A
- Packaging :
- Tape and Reel (TR)
- Max Power Dissipation :
- 35W
- Element Configuration :
- Single
- Switching Energy :
- 74μJ (on), 39μJ (off)
- Collector Emitter Voltage (VCEO) :
- 2.25V
- Published :
- 2013
- Radiation Hardening :
- No
- Gate-Emitter Voltage-Max :
- 20V
- Power - Max :
- 35W
- Reverse Recovery Time :
- 68 ns
- IGBT Type :
- NPT
- Polarity/Channel Type :
- N-Channel
- Mount :
- Surface Mount
- Gate-Emitter Thr Voltage-Max :
- 6V
- RoHS Status :
- ROHS3 Compliant
- Vce(on) (Max) @ Vge, Ic :
- 2.25V @ 15V, 2A
- Td (on/off) @ 25°C :
- 11ns/150ns
- Fall Time-Max (tf) :
- 75ns
- Mounting Type :
- Surface Mount
- Datasheets
- IRGR2B60KDTRRPBF
IRGR2B60KDTRRPBF Documents

IRGR2B60KDTRRPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRGR2B60KDTRRPBF Description
IRGR2B60KDTRRPBF manufactured by Infineon Technologies is a type of insulated gate bipolar transistor with an ultrafast soft recovery diode, which is used to provide benchmark efficiency in motor control. Excellent current sharing in parallel operation can be delivered due to its positive VCE(ON) temperature coefficient and tighter distribution of parameters. It is able to provide low VCE (on) non-punch through IGBT technology. Moreover, the IRGR2B60KDTRRPBF IGBT delivers rugged transient performance and low EMI.
IRGR2B60KDTRRPBF Features
Low diode VF
10μs short circuit capability
Square RBSOA
Ultrasoft diode reverse recovery characteristics
Positive VCE (on) temperature coefficient
IRGR2B60KDTRRPBF Applications
UPS
Motor control
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