IRGR2B60KDTRRPBF
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- Mfr.Part #
- IRGR2B60KDTRRPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- IGBT NPT 600V 6.3A DPAK
- Stock
- 36,179
- In Stock ：
- 36,179
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Single
- Max Power Dissipation :
- 35W
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Factory Lead Time :
- 13 Weeks
- Collector Emitter Voltage (VCEO) :
- 2.25V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Gate Charge :
- 12nC
- Mount :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power - Max :
- 35W
- Test Condition :
- 400V, 2A, 100 Ω, 15V
- Max Collector Current :
- 6.3A
- Mounting Type :
- Surface Mount
- Element Configuration :
- Single
- Number of Pins :
- 3
- Gate-Emitter Thr Voltage-Max :
- 6V
- Switching Energy :
- 74μJ (on), 39μJ (off)
- Collector Emitter Breakdown Voltage :
- 600V
- Operating Temperature :
- -55°C~150°C TJ
- IGBT Type :
- NPT
- Base Part Number :
- IRGR2B60
- Polarity/Channel Type :
- N-Channel
- Published :
- 2013
- Radiation Hardening :
- No
- Reverse Recovery Time :
- 68 ns
- Packaging :
- Tape and Reel (TR)
- Rise Time-Max :
- 25ns
- Gate-Emitter Voltage-Max :
- 20V
- Fall Time-Max (tf) :
- 75ns
- Input Type :
- Standard
- Vce(on) (Max) @ Vge, Ic :
- 2.25V @ 15V, 2A
- Td (on/off) @ 25°C :
- 11ns/150ns
- Current - Collector Pulsed (Icm) :
- 8A
- Datasheets
- IRGR2B60KDTRRPBF
IRGR2B60KDTRRPBF Documents
IRGR2B60KDTRRPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRGR2B60KDTRRPBF Description
IRGR2B60KDTRRPBF manufactured by Infineon Technologies is a type of insulated gate bipolar transistor with an ultrafast soft recovery diode, which is used to provide benchmark efficiency in motor control. Excellent current sharing in parallel operation can be delivered due to its positive VCE(ON) temperature coefficient and tighter distribution of parameters. It is able to provide low VCE (on) non-punch through IGBT technology. Moreover, the IRGR2B60KDTRRPBF IGBT delivers rugged transient performance and low EMI.
IRGR2B60KDTRRPBF Features
Low diode VF
10μs short circuit capability
Square RBSOA
Ultrasoft diode reverse recovery characteristics
Positive VCE (on) temperature coefficient
IRGR2B60KDTRRPBF Applications
UPS
Motor control
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