IRGR2B60KDTRRPBF
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- Mfr.Part #
- IRGR2B60KDTRRPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- IGBT NPT 600V 6.3A DPAK
- Stock
- 36,179
- In Stock ：
- 36,179
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Single
- Polarity/Channel Type :
- N-Channel
- Gate Charge :
- 12nC
- Power - Max :
- 35W
- Switching Energy :
- 74μJ (on), 39μJ (off)
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Current - Collector Pulsed (Icm) :
- 8A
- Number of Pins :
- 3
- Collector Emitter Voltage (VCEO) :
- 2.25V
- Gate-Emitter Voltage-Max :
- 20V
- Base Part Number :
- IRGR2B60
- Input Type :
- Standard
- Gate-Emitter Thr Voltage-Max :
- 6V
- Element Configuration :
- Single
- Mounting Type :
- Surface Mount
- Fall Time-Max (tf) :
- 75ns
- Max Power Dissipation :
- 35W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Test Condition :
- 400V, 2A, 100 Ω, 15V
- Mount :
- Surface Mount
- IGBT Type :
- NPT
- Td (on/off) @ 25°C :
- 11ns/150ns
- Rise Time-Max :
- 25ns
- ECCN Code :
- EAR99
- Operating Temperature :
- -55°C~150°C TJ
- Vce(on) (Max) @ Vge, Ic :
- 2.25V @ 15V, 2A
- Published :
- 2013
- Radiation Hardening :
- No
- Reverse Recovery Time :
- 68 ns
- Max Collector Current :
- 6.3A
- Collector Emitter Breakdown Voltage :
- 600V
- Factory Lead Time :
- 13 Weeks
- Datasheets
- IRGR2B60KDTRRPBF
IRGR2B60KDTRRPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRGR2B60KDTRRPBF Description
IRGR2B60KDTRRPBF manufactured by Infineon Technologies is a type of insulated gate bipolar transistor with an ultrafast soft recovery diode, which is used to provide benchmark efficiency in motor control. Excellent current sharing in parallel operation can be delivered due to its positive VCE(ON) temperature coefficient and tighter distribution of parameters. It is able to provide low VCE (on) non-punch through IGBT technology. Moreover, the IRGR2B60KDTRRPBF IGBT delivers rugged transient performance and low EMI.
IRGR2B60KDTRRPBF Features
Low diode VF
10μs short circuit capability
Square RBSOA
Ultrasoft diode reverse recovery characteristics
Positive VCE (on) temperature coefficient
IRGR2B60KDTRRPBF Applications
UPS
Motor control
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