IRGR2B60KDTRPBF
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- Mfr.Part #
- IRGR2B60KDTRPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- IGBT 600V 6.3A 35W DPAK
- Stock
- 22,464
- In Stock ：
- 22,464
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Single
- Max Collector Current :
- 6.3A
- Collector Emitter Voltage (VCEO) :
- 2.25V
- Radiation Hardening :
- No
- Rise Time-Max :
- 25ns
- Number of Pins :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Power - Max :
- 35W
- Polarity/Channel Type :
- N-Channel
- Element Configuration :
- Single
- RoHS Status :
- RoHS Compliant
- Base Part Number :
- IRGR2B60
- Factory Lead Time :
- 18 Weeks
- Reverse Recovery Time :
- 68 ns
- Mount :
- Surface Mount
- Gate-Emitter Voltage-Max :
- 20V
- Published :
- 2013
- ECCN Code :
- EAR99
- Current - Collector Pulsed (Icm) :
- 8A
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Packaging :
- Tape and Reel (TR)
- IGBT Type :
- NPT
- Collector Emitter Breakdown Voltage :
- 600V
- Max Power Dissipation :
- 35W
- Mounting Type :
- Surface Mount
- Switching Energy :
- 74μJ (on), 39μJ (off)
- Input Type :
- Standard
- Td (on/off) @ 25°C :
- 11ns/150ns
- Test Condition :
- 400V, 2A, 100 Ω, 15V
- Gate Charge :
- 12nC
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate-Emitter Thr Voltage-Max :
- 6V
- Fall Time-Max (tf) :
- 75ns
- Vce(on) (Max) @ Vge, Ic :
- 2.25V @ 15V, 2A
- Datasheets
- IRGR2B60KDTRPBF
IRGR2B60KDTRPBF Documents
IRGR2B60KDTRPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRGR2B60KDTRPBF Description
The IRGR2B60KDTRPBF is an IGBT with an ultra-fast soft recovery diode.
IRGR2B60KDTRPBF Features
-
Low VCE (ON) Non-Punch Through IGBT technology
-
Low Diode VF
-
10μs Short Circuit Capability
-
Square RBSOA
-
Ultra-soft Diode Reverse Recovery Characteristics
-
Positive VCE (ON) temperature coefficient
-
Lead-free
IRGR2B60KDTRPBF Applications
-
General Use
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