IRGB4064DPBF
- Mfr.Part #
- IRGB4064DPBF
- Manufacturer
- International Rectifier
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- IGBT WITH RECOVERY DIODE
- Stock
- 42,029
- In Stock :
- 42,029
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- Manufacturer :
- International Rectifier
- Product Category :
- Transistors - IGBTs - Single
- Termination :
- Through Hole
- Gate Charge :
- 21nC
- Height :
- 9.02mm
- Input Type :
- Standard
- Turn On Delay Time :
- 27 ns
- Width :
- 4.82mm
- Collector Emitter Voltage (VCEO) :
- 1.91V
- Mount :
- Through Hole
- Factory Lead Time :
- 99 Weeks
- Power Dissipation :
- 101W
- Switching Energy :
- 29μJ (on), 200μJ (off)
- Turn Off Time-Nom (toff) :
- 131 ns
- Test Condition :
- 400V, 10A, 22 Ω, 15V
- Vce(on) (Max) @ Vge, Ic :
- 1.91V @ 15V, 10A
- Element Configuration :
- Single
- Published :
- 2006
- Gate-Emitter Thr Voltage-Max :
- 6.5V
- Number of Elements :
- 1
- RoHS Status :
- RoHS Compliant
- Packaging :
- Tube
- JEDEC-95 Code :
- TO-220AB
- Max Collector Current :
- 20A
- Turn On Time :
- 43 ns
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-220-3
- Reverse Recovery Time :
- 62 ns
- Turn-Off Delay Time :
- 79 ns
- Collector Emitter Breakdown Voltage :
- 600V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Td (on/off) @ 25°C :
- 27ns/79ns
- Case Connection :
- COLLECTOR
- Radiation Hardening :
- No
- Max Power Dissipation :
- 101W
- IGBT Type :
- Trench
- Mounting Type :
- Through Hole
- Transistor Application :
- POWER CONTROL
- Rise Time :
- 15ns
- Number of Pins :
- 3
- Weight :
- 6.000006g
- Current - Collector Pulsed (Icm) :
- 40A
- ECCN Code :
- EAR99
- Collector Emitter Saturation Voltage :
- 1.6V
- Operating Temperature :
- -55°C~175°C TJ
- REACH SVHC :
- No SVHC
- Number of Terminations :
- 3
- Length :
- 10.66mm
- Polarity/Channel Type :
- N-Channel
- Datasheets
- IRGB4064DPBF

IRGB4064DPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRGB4064DPBF Description
IRGB4064DPBF transistor is a MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes IRGB4064DPBF MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.
IRGB4064DPBF Features
Gold metalization
Excellent thermal stability
Common source configuration
Thermally enhanced packaging
IRGB4064DPBF Applications
ISM applications
DC large signal applications
Power factor correction
Electronic lamp ballasts
Flat panel display
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