IRGB4064DPBF
- Mfr.Part #
- IRGB4064DPBF
- Manufacturer
- International Rectifier
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- IGBT WITH RECOVERY DIODE
- Stock
- 42,029
- In Stock :
- 42,029
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- Manufacturer :
- International Rectifier
- Product Category :
- Transistors - IGBTs - Single
- Td (on/off) @ 25°C :
- 27ns/79ns
- Max Collector Current :
- 20A
- Case Connection :
- COLLECTOR
- Packaging :
- Tube
- Gate-Emitter Thr Voltage-Max :
- 6.5V
- Switching Energy :
- 29μJ (on), 200μJ (off)
- Mount :
- Through Hole
- Width :
- 4.82mm
- Number of Pins :
- 3
- Element Configuration :
- Single
- Reverse Recovery Time :
- 62 ns
- Collector Emitter Breakdown Voltage :
- 600V
- Operating Temperature :
- -55°C~175°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Length :
- 10.66mm
- Input Type :
- Standard
- Collector Emitter Voltage (VCEO) :
- 1.91V
- Published :
- 2006
- Rise Time :
- 15ns
- ECCN Code :
- EAR99
- Gate Charge :
- 21nC
- Package / Case :
- TO-220-3
- Current - Collector Pulsed (Icm) :
- 40A
- Weight :
- 6.000006g
- Vce(on) (Max) @ Vge, Ic :
- 1.91V @ 15V, 10A
- Mounting Type :
- Through Hole
- Height :
- 9.02mm
- Test Condition :
- 400V, 10A, 22 Ω, 15V
- Number of Elements :
- 1
- Turn On Time :
- 43 ns
- IGBT Type :
- Trench
- Turn-Off Delay Time :
- 79 ns
- Transistor Application :
- POWER CONTROL
- Radiation Hardening :
- No
- Number of Terminations :
- 3
- RoHS Status :
- RoHS Compliant
- Polarity/Channel Type :
- N-Channel
- Turn Off Time-Nom (toff) :
- 131 ns
- Max Power Dissipation :
- 101W
- Lead Free :
- Lead Free
- Collector Emitter Saturation Voltage :
- 1.6V
- Transistor Element Material :
- SILICON
- JEDEC-95 Code :
- TO-220AB
- Termination :
- Through Hole
- Power Dissipation :
- 101W
- REACH SVHC :
- No SVHC
- Factory Lead Time :
- 99 Weeks
- Turn On Delay Time :
- 27 ns
- Datasheets
- IRGB4064DPBF
IRGB4064DPBF Documents

IRGB4064DPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRGB4064DPBF Description
IRGB4064DPBF transistor is a MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes IRGB4064DPBF MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.
IRGB4064DPBF Features
Gold metalization
Excellent thermal stability
Common source configuration
Thermally enhanced packaging
IRGB4064DPBF Applications
ISM applications
DC large signal applications
Power factor correction
Electronic lamp ballasts
Flat panel display
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