IRGB20B60PD1PBF
- Mfr.Part #
- IRGB20B60PD1PBF
- Manufacturer
- International Rectifier
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- IGBT, 40A I(C), 600V V(BR)CES, N
- Stock
- 31,861
- In Stock :
- 31,861
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- Manufacturer :
- International Rectifier
- Product Category :
- Transistors - IGBTs - Single
- Reverse Recovery Time :
- 28 ns
- Collector Emitter Voltage (VCEO) :
- 2.8V
- Termination :
- Through Hole
- REACH SVHC :
- No SVHC
- Operating Temperature :
- -55°C~150°C TJ
- Turn-Off Delay Time :
- 115 ns
- Current - Collector (Ic) (Max) :
- 40A
- Factory Lead Time :
- 16 Weeks
- Vce(on) (Max) @ Vge, Ic :
- 2.8V @ 15V, 20A
- Power - Max :
- 215W
- Collector Emitter Breakdown Voltage :
- 600V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Saturation Voltage :
- 2.05V
- Mount :
- Through Hole
- Mounting Type :
- Through Hole
- Test Condition :
- 390V, 13A, 10Ohm, 15V
- Min Operating Temperature :
- -55°C
- Td (on/off) @ 25°C :
- 20ns/115ns
- Max Collector Current :
- 40A
- Input Type :
- Standard
- Voltage - Rated DC :
- 600V
- Height :
- 8.763mm
- Number of Pins :
- 3
- Current Rating :
- 40A
- Supplier Device Package :
- TO-220AB
- Max Power Dissipation :
- 215W
- Lead Free :
- Lead Free
- Rise Time :
- 5ns
- Current - Collector Pulsed (Icm) :
- 80A
- Radiation Hardening :
- No
- Switching Energy :
- 95μJ (on), 100μJ (off)
- Published :
- 2003
- Gate Charge :
- 68nC
- Package / Case :
- TO-220-3
- Power Dissipation :
- 215W
- Voltage - Collector Emitter Breakdown (Max) :
- 600V
- Packaging :
- Tube
- Max Operating Temperature :
- 150°C
- RoHS Status :
- RoHS Compliant
- Length :
- 10.5156mm
- Turn On Delay Time :
- 20 ns
- IGBT Type :
- NPT
- Weight :
- 6.000006g
- Width :
- 4.69mm
- Element Configuration :
- Single
- Datasheets
- IRGB20B60PD1PBF
IRGB20B60PD1PBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRGB20B60PD1PBF Description
IRGB20B60PD1PBF IGBT is built on a brand new idea of planar technology to create an IGBT that has a more precise variation of the energy of switching (Eoff) against temperature. IGBT IRGB20B60PD1PBF is the subset of IGBTs that are suited to operate at a high frequency that exceeds 100 kHz. IRGB20B60PD1PBF Infineon Technologies is suitable for Telecom and Server SMPS, PFC and ZVS SMPS Circuits, Power Supplies, Consumer Electronics Power Supplies.
IRGB20B60PD1PBF Features
Lower VCE(SAT)
Lower Parasitic Capacitances
Minimal Tail Current
HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode
Tighter Distribution of Parameters
IRGB20B60PD1PBF Applications
Telecom and Server SMPS
PFC and ZVS SMPS Circuits
Uninterruptable Power Supplies
Consumer Electronics Power Supplies
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