IRGB20B60PD1PBF
- Mfr.Part #
- IRGB20B60PD1PBF
- Manufacturer
- International Rectifier
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- IGBT, 40A I(C), 600V V(BR)CES, N
- Stock
- 31,861
- In Stock :
- 31,861
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- Manufacturer :
- International Rectifier
- Product Category :
- Transistors - IGBTs - Single
- Termination :
- Through Hole
- Collector Emitter Voltage (VCEO) :
- 2.8V
- Height :
- 8.763mm
- Power Dissipation :
- 215W
- Width :
- 4.69mm
- Max Operating Temperature :
- 150°C
- Collector Emitter Saturation Voltage :
- 2.05V
- Published :
- 2003
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Length :
- 10.5156mm
- REACH SVHC :
- No SVHC
- Power - Max :
- 215W
- Operating Temperature :
- -55°C~150°C TJ
- Package / Case :
- TO-220-3
- Voltage - Rated DC :
- 600V
- Vce(on) (Max) @ Vge, Ic :
- 2.8V @ 15V, 20A
- Input Type :
- Standard
- Turn-Off Delay Time :
- 115 ns
- Element Configuration :
- Single
- Collector Emitter Breakdown Voltage :
- 600V
- IGBT Type :
- NPT
- Supplier Device Package :
- TO-220AB
- Reverse Recovery Time :
- 28 ns
- Turn On Delay Time :
- 20 ns
- RoHS Status :
- RoHS Compliant
- Max Collector Current :
- 40A
- Weight :
- 6.000006g
- Lead Free :
- Lead Free
- Packaging :
- Tube
- Switching Energy :
- 95μJ (on), 100μJ (off)
- Current - Collector Pulsed (Icm) :
- 80A
- Min Operating Temperature :
- -55°C
- Current - Collector (Ic) (Max) :
- 40A
- Mount :
- Through Hole
- Mounting Type :
- Through Hole
- Rise Time :
- 5ns
- Td (on/off) @ 25°C :
- 20ns/115ns
- Factory Lead Time :
- 16 Weeks
- Number of Pins :
- 3
- Voltage - Collector Emitter Breakdown (Max) :
- 600V
- Radiation Hardening :
- No
- Test Condition :
- 390V, 13A, 10Ohm, 15V
- Gate Charge :
- 68nC
- Current Rating :
- 40A
- Max Power Dissipation :
- 215W
- Datasheets
- IRGB20B60PD1PBF
IRGB20B60PD1PBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRGB20B60PD1PBF Description
IRGB20B60PD1PBF IGBT is built on a brand new idea of planar technology to create an IGBT that has a more precise variation of the energy of switching (Eoff) against temperature. IGBT IRGB20B60PD1PBF is the subset of IGBTs that are suited to operate at a high frequency that exceeds 100 kHz. IRGB20B60PD1PBF Infineon Technologies is suitable for Telecom and Server SMPS, PFC and ZVS SMPS Circuits, Power Supplies, Consumer Electronics Power Supplies.
IRGB20B60PD1PBF Features
Lower VCE(SAT)
Lower Parasitic Capacitances
Minimal Tail Current
HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode
Tighter Distribution of Parameters
IRGB20B60PD1PBF Applications
Telecom and Server SMPS
PFC and ZVS SMPS Circuits
Uninterruptable Power Supplies
Consumer Electronics Power Supplies
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