IRGB30B60KPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Package / Case :

TO-220-3

IGBT Type :

NPT

Width :

4.82mm

REACH SVHC :

No SVHC

Gate Charge :

102nC

Collector Emitter Breakdown Voltage :

600V

Switching Energy :

350μJ (on), 825μJ (off)

Case Connection :

COLLECTOR

Turn On Time :

74 ns

Collector Emitter Voltage (VCEO) :

2.35V

Power Dissipation :

370W

Element Configuration :

Single

Vce(on) (Max) @ Vge, Ic :

2.35V @ 15V, 30A

Lead Free :

Lead Free

Weight :

6.000006g

Length :

10.6426mm

Max Collector Current :

78A

Current Rating :

78A

Transistor Element Material :

SILICON

Number of Terminations :

3

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Input Type :

Standard

JEDEC-95 Code :

TO-220AB

Height :

16.51mm

Published :

2004

Fall Time-Max (tf) :

42ns

Td (on/off) @ 25°C :

46ns/185ns

Termination :

Through Hole

Turn Off Time-Nom (toff) :

237 ns

Packaging :

Tube

Mounting Type :

Through Hole

RoHS Status :

ROHS3 Compliant

Mount :

Through Hole

Polarity/Channel Type :

N-Channel

Gate-Emitter Thr Voltage-Max :

5.5V

Voltage - Rated DC :

600V

Operating Temperature :

-55°C~175°C TJ

Gate-Emitter Voltage-Max :

20V

Test Condition :

400V, 30A, 10 Ω, 15V

Transistor Application :

Motor Control

Factory Lead Time :

16 Weeks

Rise Time :

28ns

Max Power Dissipation :

370W

Current - Collector Pulsed (Icm) :

120A

Collector Emitter Saturation Voltage :

2.35V

ECCN Code :

EAR99

Number of Pins :

3