IRGB10B60KDPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Max Power Dissipation :

156W

Factory Lead Time :

16 Weeks

Collector Emitter Breakdown Voltage :

600V

Rise Time :

20ns

Gate-Emitter Thr Voltage-Max :

5.5V

Max Collector Current :

22A

Termination :

Through Hole

Packaging :

Tube

Switching Energy :

140μJ (on), 250μJ (off)

Turn Off Time-Nom (toff) :

276 ns

Gate-Emitter Voltage-Max :

20V

Lead Free :

Lead Free

Input Type :

Standard

Transistor Element Material :

SILICON

IGBT Type :

NPT

Power Dissipation :

156W

Current Rating :

22A

Collector Emitter Voltage (VCEO) :

2.2V

Mount :

Through Hole

Test Condition :

400V, 10A, 47 Ω, 15V

Polarity/Channel Type :

N-Channel

Length :

10.6426mm

Number of Pins :

3

Reverse Recovery Time :

90 ns

Current - Collector Pulsed (Icm) :

44A

Width :

4.82mm

Vce(on) (Max) @ Vge, Ic :

2.2V @ 15V, 10A

Mounting Type :

Through Hole

Operating Temperature :

-55°C~150°C TJ

Gate Charge :

38nC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

COLLECTOR

Height :

16.51mm

REACH SVHC :

No SVHC

Collector Emitter Saturation Voltage :

1.8V

Td (on/off) @ 25°C :

30ns/230ns

Package / Case :

TO-220-3

Element Configuration :

Single

Number of Elements :

1

JEDEC-95 Code :

TO-220AB

Transistor Application :

Motor Control

ECCN Code :

EAR99

Number of Terminations :

3

Radiation Hardening :

No

Turn On Time :

50 ns

Voltage - Rated DC :

600V

Published :

2003

Weight :

6.000006g

RoHS Status :

RoHS Compliant