IRGB10B60KDPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Packaging :

Tube

Voltage - Rated DC :

600V

Switching Energy :

140μJ (on), 250μJ (off)

JEDEC-95 Code :

TO-220AB

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

REACH SVHC :

No SVHC

Gate Charge :

38nC

Mount :

Through Hole

Collector Emitter Saturation Voltage :

1.8V

Termination :

Through Hole

Collector Emitter Breakdown Voltage :

600V

Number of Pins :

3

Element Configuration :

Single

Height :

16.51mm

Vce(on) (Max) @ Vge, Ic :

2.2V @ 15V, 10A

Reverse Recovery Time :

90 ns

Max Collector Current :

22A

Power Dissipation :

156W

Case Connection :

COLLECTOR

Radiation Hardening :

No

Published :

2003

IGBT Type :

NPT

Lead Free :

Lead Free

Transistor Application :

Motor Control

Max Power Dissipation :

156W

Polarity/Channel Type :

N-Channel

Package / Case :

TO-220-3

Weight :

6.000006g

Current Rating :

22A

Input Type :

Standard

Collector Emitter Voltage (VCEO) :

2.2V

Current - Collector Pulsed (Icm) :

44A

Rise Time :

20ns

RoHS Status :

RoHS Compliant

Mounting Type :

Through Hole

Number of Terminations :

3

Turn Off Time-Nom (toff) :

276 ns

Transistor Element Material :

SILICON

Test Condition :

400V, 10A, 47 Ω, 15V

Gate-Emitter Voltage-Max :

20V

Width :

4.82mm

Length :

10.6426mm

Turn On Time :

50 ns

Gate-Emitter Thr Voltage-Max :

5.5V

Td (on/off) @ 25°C :

30ns/230ns

Factory Lead Time :

16 Weeks