IRFP90N20DPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Recovery Time :

340 ns

Drain Current-Max (Abs) (ID) :

90A

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Vgs (Max) :

±30V

Terminal Finish :

MATTE TIN OVER NICKEL

REACH SVHC :

No SVHC

Package / Case :

TO-247-3

Gate Charge (Qg) (Max) @ Vgs :

270nC @ 10V

Continuous Drain Current (ID) :

94A

Number of Terminations :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn On Delay Time :

23 ns

Operating Temperature :

-55°C~175°C TJ

Length :

15.875mm

Time@Peak Reflow Temperature-Max (s) :

30

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Power Dissipation-Max :

580W Tc

Transistor Element Material :

SILICON

Packaging :

Bulk

Vgs(th) (Max) @ Id :

5V @ 250μA

Number of Elements :

1

Width :

5.3mm

Current - Continuous Drain (Id) @ 25°C :

94A Tc

Peak Reflow Temperature (Cel) :

250

ECCN Code :

EAR99

Mount :

Through Hole

Published :

2001

Current Rating :

94A

JEDEC-95 Code :

TO-247AC

Rise Time :

160ns

Nominal Vgs :

5 V

JESD-609 Code :

e3

Element Configuration :

Single

Power Dissipation :

580W

Fall Time (Typ) :

79 ns

Voltage - Rated DC :

200V

Lead Free :

Lead Free

Input Capacitance (Ciss) (Max) @ Vds :

6040pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Number of Channels :

1

Dual Supply Voltage :

200V

Factory Lead Time :

12 Weeks

Resistance :

23mOhm

Series :

HEXFET®

Height :

20.3mm

Mounting Type :

Through Hole

Number of Pins :

3

Drain to Source Breakdown Voltage :

200V

Turn-Off Delay Time :

43 ns

Threshold Voltage :

5V

Rds On (Max) @ Id, Vgs :

23m Ω @ 56A, 10V

Gate to Source Voltage (Vgs) :

30V