IRFP450NPBF

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Mfr.Part #
IRFP450NPBF
Manufacturer
Vishay
Package / Case
TO-247-3
Datasheet
Download
Description
MOSFET N-CH 500V 14A TO247-3
Stock
1,813
In Stock :
1,813

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Rds On Max :
370 mΩ
Current - Continuous Drain (Id) @ 25°C :
14A Tc
Operating Temperature :
-55°C~150°C TJ
Gate Charge (Qg) (Max) @ Vgs :
77nC @ 10V
Packaging :
Tube
Length :
15.87mm
Width :
5.31mm
Fall Time (Typ) :
25 ns
Mounting Type :
Through Hole
Drain to Source Voltage (Vdss) :
500V
Drain to Source Resistance :
370mOhm
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Element Configuration :
Single
FET Type :
N-Channel
Height :
20.7mm
Vgs (Max) :
±30V
Vgs(th) (Max) @ Id :
5V @ 250μA
Package / Case :
TO-247-3
Number of Pins :
3
Published :
2009
Continuous Drain Current (ID) :
14A
Rise Time :
63ns
Input Capacitance (Ciss) (Max) @ Vds :
2260pF @ 25V
Max Operating Temperature :
150°C
Gate to Source Voltage (Vgs) :
30V
Power Dissipation-Max :
200W Tc
Number of Channels :
1
Drive Voltage (Max Rds On,Min Rds On) :
10V
RoHS Status :
ROHS3 Compliant
Weight :
38.000013g
Turn-Off Delay Time :
29 ns
Min Operating Temperature :
-55°C
Drain to Source Breakdown Voltage :
500V
Input Capacitance :
2.26nF
Mount :
Through Hole
Rds On (Max) @ Id, Vgs :
370mOhm @ 8.4A, 10V
Supplier Device Package :
TO-247-3
Turn On Delay Time :
20 ns
Datasheets
IRFP450NPBF
Introducing Transistors - FETs, MOSFETs - Single Vishay IRFP450NPBF from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Package / Case:TO-247-3, Number of Pins:3, Number of Channels:1, IRFP450NPBF pinout, IRFP450NPBF datasheet PDF, IRFP450NPBF amp .Beyond Transistors - FETs, MOSFETs - Single Vishay IRFP450NPBF ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay IRFP450NPBF


N-Channel Tube 370mOhm @ 8.4A, 10V ±30V 2260pF @ 25V 77nC @ 10V 500V TO-247-3

IRFP450NPBF Overview


CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 2260pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 500V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 500V.As a result of its turn-off delay time, which is 29 ns, the device has taken time to charge its input capacitance before drain current conduction begins.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 370mOhm.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 20 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.The transistor must receive a 500V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IRFP450NPBF Features


a continuous drain current (ID) of 14A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 29 ns
single MOSFETs transistor is 370mOhm
a 500V drain to source voltage (Vdss)


IRFP450NPBF Applications


There are a lot of Vishay Siliconix
IRFP450NPBF applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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