IRFDC20PBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Element Configuration :

Single

Continuous Drain Current (ID) :

320mA

Lead Free :

Lead Free

Mounting Type :

Through Hole

Rise Time :

23ns

Fall Time (Typ) :

23 ns

Published :

2005

Resistance :

4.4Ohm

Rds On Max :

4.4 Ω

Drain to Source Resistance :

4.4Ohm

Drain to Source Breakdown Voltage :

600V

Power Dissipation-Max :

1W Ta

Width :

5.0038mm

Packaging :

Tube

Current - Continuous Drain (Id) @ 25°C :

320mA Ta

Number of Elements :

1

Current Rating :

320mA

Voltage - Rated DC :

600V

Factory Lead Time :

8 Weeks

Vgs(th) (Max) @ Id :

4V @ 250µA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance :

350pF

Length :

6.2738mm

Nominal Vgs :

10 V

Operating Temperature :

-55°C~150°C TJ

Height :

3.3782mm

Package / Case :

4-DIP (0.300, 7.62mm)

Drain to Source Voltage (Vdss) :

600V

Radiation Hardening :

No

Number of Pins :

4

Power Dissipation :

1W

Threshold Voltage :

4V

REACH SVHC :

Unknown

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

4.4Ohm @ 190mA, 10V

Turn On Delay Time :

10 ns

Max Operating Temperature :

150°C

Turn-Off Delay Time :

30 ns

RoHS Status :

ROHS3 Compliant

Mount :

Through Hole

Supplier Device Package :

4-DIP, Hexdip, HVMDIP

Input Capacitance (Ciss) (Max) @ Vds :

350pF @ 25V

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 10V

Min Operating Temperature :

-55°C

Gate to Source Voltage (Vgs) :

20V