IRFD113PBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

1W Tc

Case Connection :

DRAIN

Radiation Hardening :

No

Number of Terminations :

2

ECCN Code :

EAR99

Terminal Position :

Dual

Vgs(th) (Max) @ Id :

4V @ 250µA

Operating Temperature :

-55°C~150°C TJ

Factory Lead Time :

8 Weeks

DS Breakdown Voltage-Min :

60V

Input Capacitance (Ciss) (Max) @ Vds :

200pF @ 25V

Rds On (Max) @ Id, Vgs :

800m Ω @ 800mA, 10V

Package / Case :

4-DIP (0.300, 7.62mm)

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

800mA Tc

Turn-Off Delay Time :

15 ns

Continuous Drain Current (ID) :

800mA

Pin Count :

2

Mounting Type :

Through Hole

Drain Current-Max (Abs) (ID) :

0.8A

Gate to Source Voltage (Vgs) :

20V

Packaging :

Tube

Transistor Element Material :

SILICON

JESD-30 Code :

R-PDIP-T2

Number of Pins :

4

Feedback Cap-Max (Crss) :

25 pF

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

60V

Gate Charge (Qg) (Max) @ Vgs :

7nC @ 10V

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Mount :

Through Hole

Rise Time :

15ns

Published :

2017

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Channels :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.8Ohm

Fall Time (Typ) :

10 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

10 ns