IRFD020PBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Rise Time :

55ns

Gate Charge (Qg) (Max) @ Vgs :

24nC @ 10V

Number of Terminations :

3

Gate to Source Voltage (Vgs) :

20V

Element Configuration :

Single

Drain to Source Breakdown Voltage :

60V

Mount :

Through Hole

Power Dissipation :

1.3W

Input Capacitance (Ciss) (Max) @ Vds :

400pF @ 25V

Published :

2012

Power Dissipation-Max :

1W Tc

Vgs (Max) :

±20V

Radiation Hardening :

No

Fall Time (Typ) :

26 ns

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

FET Type :

N-Channel

Drain to Source Voltage (Vdss) :

50V

REACH SVHC :

Unknown

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

100m Ω @ 1.4A, 10V

Resistance :

100MOhm

Threshold Voltage :

4V

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

2.4A Tc

Terminal Position :

Dual

Vgs(th) (Max) @ Id :

4V @ 250µA

Turn-Off Delay Time :

16 ns

Mounting Type :

Through Hole

Turn On Delay Time :

8.7 ns

Continuous Drain Current (ID) :

2.4A

Pin Count :

3

Lead Free :

Lead Free

Package / Case :

4-DIP (0.300, 7.62mm)

JESD-30 Code :

R-PDIP-T3

Packaging :

Tube

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

10V

Factory Lead Time :

8 Weeks

Transistor Application :

SWITCHING

Number of Pins :

4