IRFD110PBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Current Rating :

1A

Operating Mode :

ENHANCEMENT MODE

Turn On Delay Time :

6.9 ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Max Junction Temperature (Tj) :

175°C

Qualification Status :

Not Qualified

Drive Voltage (Max Rds On,Min Rds On) :

10V

Nominal Vgs :

4 V

Package / Case :

4-DIP (0.300, 7.62mm)

Drain to Source Breakdown Voltage :

100V

Input Capacitance (Ciss) (Max) @ Vds :

180pF @ 25V

Factory Lead Time :

8 Weeks

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

540m Ω @ 600mA, 10V

Operating Temperature :

-55°C~175°C TJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Resistance :

540mOhm

Turn-Off Delay Time :

15 ns

Mount :

Through Hole

Length :

5mm

Vgs(th) (Max) @ Id :

4V @ 250µA

Power Dissipation :

1.3W

Case Connection :

DRAIN

Voltage - Rated DC :

100V

Current - Continuous Drain (Id) @ 25°C :

1A Ta

Width :

6.29mm

Fall Time (Typ) :

16 ns

Number of Terminations :

3

Dual Supply Voltage :

100V

RoHS Status :

ROHS3 Compliant

Packaging :

Tube

Vgs (Max) :

±20V

Pin Count :

4

Threshold Voltage :

4V

Mounting Type :

Through Hole

Transistor Application :

SWITCHING

Number of Pins :

4

Gate to Source Voltage (Vgs) :

20V

Rise Time :

16ns

Row Spacing :

7.62 mm

Power Dissipation-Max :

1.3W Ta

Lead Pitch :

2.54mm

Transistor Element Material :

SILICON

Published :

2008

JESD-30 Code :

R-PDIP-T3

Lead Free :

Lead Free

Element Configuration :

Single

Recovery Time :

200 ns

REACH SVHC :

Unknown

FET Type :

N-Channel

Continuous Drain Current (ID) :

1A

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

8.3nC @ 10V

Height :

4.57mm

Drain Current-Max (Abs) (ID) :

1A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Channels :

1

Terminal Position :

Dual