IRFD110

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~175°C TJ

Supplier Device Package :

4-DIP, Hexdip, HVMDIP

Drain to Source Resistance :

540mOhm

Power Dissipation :

1.3W

Rds On (Max) @ Id, Vgs :

540mOhm @ 600mA, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance :

180pF

Gate Charge (Qg) (Max) @ Vgs :

8.3nC @ 10V

FET Type :

N-Channel

Number of Pins :

4

Mounting Type :

Through Hole

Drain to Source Voltage (Vdss) :

100V

RoHS Status :

Non-RoHS Compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

Min Operating Temperature :

-55°C

Lead Free :

Contains Lead

Current - Continuous Drain (Id) @ 25°C :

1A Ta

Packaging :

Tube

Voltage - Rated DC :

100V

Contact Plating :

Lead, Tin

Turn-Off Delay Time :

15 ns

Power Dissipation-Max :

1.3W Ta

Input Capacitance (Ciss) (Max) @ Vds :

180pF @ 25V

Drain to Source Breakdown Voltage :

100V

Number of Elements :

1

Rds On Max :

540 mΩ

Vgs (Max) :

±20V

Turn On Delay Time :

6.9 ns

Max Operating Temperature :

175°C

Rise Time :

16ns

Resistance :

540mOhm

Mount :

Through Hole

Current Rating :

1A

Gate to Source Voltage (Vgs) :

20V

Continuous Drain Current (ID) :

1A

Package / Case :

4-DIP (0.300, 7.62mm)

Fall Time (Typ) :

16 ns

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

4V @ 250µA

Published :

2015