IRFD014PBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

4-DIP (0.300, 7.62mm)

Mount :

Through Hole

Turn On Delay Time :

10 ns

Turn-Off Delay Time :

13 ns

Element Configuration :

Single

Recovery Time :

140 ns

RoHS Status :

ROHS3 Compliant

Power Dissipation :

1.3W

Rds On Max :

200 mΩ

Max Operating Temperature :

175°C

Supplier Device Package :

4-DIP, Hexdip, HVMDIP

Resistance :

200mOhm

Continuous Drain Current (ID) :

1.7A

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

310pF @ 25V

Rise Time :

50ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Pins :

4

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

60V

Height :

3.3782mm

Current - Continuous Drain (Id) @ 25°C :

1.7A Ta

Threshold Voltage :

4V

Mounting Type :

Through Hole

Width :

5.0038mm

Rds On (Max) @ Id, Vgs :

200mOhm @ 1A, 10V

Factory Lead Time :

8 Weeks

Vgs(th) (Max) @ Id :

4V @ 250µA

Published :

2014

Operating Temperature :

-55°C~175°C TJ

Input Capacitance :

310pF

Gate to Source Voltage (Vgs) :

20V

Number of Elements :

1

Drain to Source Voltage (Vdss) :

60V

Vgs (Max) :

±20V

REACH SVHC :

Unknown

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 10V

Packaging :

Tube

Radiation Hardening :

No

Power Dissipation-Max :

1.3W Ta

Drain to Source Resistance :

200mOhm

Fall Time (Typ) :

50 ns

Min Operating Temperature :

-55°C

Length :

6.2738mm

Lead Free :

Lead Free